GSI550
Abstract: IGT7E50CS
Text: Preview Products G SI550, IGT7E50CS File N um b er 2328 Current Sensing IGT Transistors Insulated Gate Bipolar Transistors 50 A, 500 V rDs on = 0.052 fi TERMINAL DIAGRAM Features: • ■ ■ ■ ■ Lo w Vce(sat) - 1 . 5 V typ. @ 50 A U ltra -fa st tu rn -o n - 200 n s ty p ic a l
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GSI550,
IGT7E50CS
GSI550
IGT7E50CS
60Msec
92GS-44017
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RGAC
Abstract: GSI525 801 LCM IGT7E20CS G2GS gee transistor R relays
Text: Insulated-Gate Bipolar Transistors GS1525, IGT7E20CS F ile N u m b e r 2327 Current Sensing IGT Transistors Insulated Gate Bipolar Transistors 25 A, 500 V ros on = 0.105 O TERMINAL DIAGRAM Features: • Low Vce{sat) - 1.8 V typ. @ 25 A m Ultra-fast turn-on -1 SO ns typical
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GSI525,
IGT7E20CS
92GS-44006R'
GSI525
IGT7E20CS
92gs-44013
10-PULSE
92gs44017
RGAC
801 LCM
G2GS
gee transistor
R relays
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