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    Bimba Manufacturing Company FO-093.5-MW

    Cylinder, Flat-I, Dbl Act, Sgl Rod, 1-1/16in Bore ; Stroke: 3.5 Inch(s); Magne | Bimba FO-093.5-MW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FO-093.5-MW Bulk 5 Weeks 1
    • 1 $124.15
    • 10 $124.15
    • 100 $124.15
    • 1000 $124.15
    • 10000 $124.15
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    935MW Datasheets Context Search

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    512k x 8 chip block diagram

    Abstract: 512K x 8 bit sram 32 pin 2M x 32 chip block diagram 512k x 8 SRAM
    Text: 2M x 32 SRAM MODULE SYS322000ZK-015/020/025 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS322000ZK is a plastic 64Mbit Static RAM Module offered in a low profile 72 pin ZIP package, organised as 2M x 32. The module


    Original     		PDF SYS322000ZK-015/020/025 SYS322000ZK 64Mbit SYS322000ZKI-15 512k x 8 chip block diagram 512K x 8 bit sram 32 pin 2M x 32 chip block diagram 512k x 8 SRAM

    Untitled

    Abstract: No abstract text available
    Text: 2M x 32 SRAM MODULE SYS322000LKXA - 015/020/025 Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, ENGLAND. TEL +44 0191 2930500. FAX +44 0191 2590997 Description The SYS322000LKXA is a plastic 64Mbit Static RAM Module offered in a low profile 72 pin SIMM


    Original     		PDF SYS322000LKXA 64Mbit

    SOJ40

    Abstract: msm514265c
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF J2G0027-17-41 MSM514265C/CSL MSM514265C/CSL 144-Word 16-Bit MSM514265C/CSLCMOS262 41CMOS 40SOJ44/40TSOP 5128ms512128msSL 40400milSOJ SOJ40 msm514265c

    935m

    Abstract: SM98-PS-U25A-H
    Text: Pump Laser Modules KeyFeatures 850mW operating power Epoxy free design inside the Butterfly module for long term Reliability Extended temperature range -5°C to 75°C Fiber Bragg Grating (FBG) stabilized with PM pigtail RoHS 6/6 Applications High output power Low noise


    Original     		PDF 850mW 935mW 980nm 14-pin 850mW. incorp00 850mW 935m SM98-PS-U25A-H

    SOJ40

    Abstract: No abstract text available
    Text: J2G0027-17-41 作成：1998年 1月 MSM514265C/CSL l 前回作成：1997年 5月 ¡ 電子デバイス MSM514265C/CSL 262,144-Wordx16-Bit DYNAMIC RAM：EDO機能付き高速ページモード n 概要 MSM514265C/CSLはCMOSプロセス技術を用いた262,144ワ−ド×16ビット構成のダイナミックランダ


    Original     		PDF J2G0027-17-41 MSM514265C/CSL MSM514265C/CSL 144-Word 16-Bit MSM514265C/CSLCMOS262 41CMOS 40SOJ44/40TSOP 5128ms512128msSL 40400milSOJ SOJ40

    64mbit 72-pin simm

    Abstract: 72-pin simm 2m x 32 SRAM SIMM
    Text: hmp 2M x 32 SRAM MODULE SYS322000LKXA - 015/020/025 Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, ENGLAND. TEL +44 0191 2930500. FAX +44 0191 2590997 Description The SYS322000LKXA is a plastic 64Mbit Static RAM Module offered in a low profile 72 pin SIMM


    Original     		PDF SYS322000LKXA 32bit 935mW 64Mbit AI-15 64mbit 72-pin simm 72-pin simm 2m x 32 SRAM SIMM

    SM98-PS-U25A-H

    Abstract: No abstract text available
    Text: Pump Laser Modules KeyFeatures 850mW operating power Extended temperature range -5°C to 75°C Fiber Bragg Grating (FBG) stabilized with PM pigtail RoHS 6/6 compliant Applications High output power Low noise Erbium-doped Fiber Amplifier (EDFA) Next Generation EDFAs


    Original     		PDF 850mW 935mW 980nm 14-pin 850mW. back00 850mW SM98-PS-U25A-H

    512k x 8 chip block diagram

    Abstract: TSOP II 54 64mbit 72-pin simm
    Text: 2M x 32 SRAM MODULE SYS322000LKXA - 015/020/025 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS322000LKXA is a plastic 64Mbit Static RAM Module offered in a low profile 72 pin SIMM


    Original     		PDF SYS322000LKXA 64Mbit 512k x 8 chip block diagram TSOP II 54 64mbit 72-pin simm

    HY514260B

    Abstract: hy514260bjc HY514260
    Text: HY514260B 256Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60


    Original     		PDF HY514260B 256Kx16, 16-bit 16-bits 256Kx16 HY514260B hy514260bjc HY514260

    SOJ40

    Abstract: msm514260c
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF J2G0026-17-41 MSM514260C/CSL MSM514260C/CSL 144-Word 16-Bit MSM514260C/CSLCMOS262 41CMOS 40SOJ44/40TSOP 5128ms512128msSL 40400milSOJ SOJ40 msm514260c

    SOJ40

    Abstract: No abstract text available
    Text: J2G0026-17-41 作成：1998年 1月 MSM514260C/CSL l 前回作成：1997年 5月 ¡ 電子デバイス MSM514260C/CSL 262,144-Wordx16-Bit DYNAMIC RAM：高速ページモード n 概要 MSM514260C/CSLはCMOSプロセス技術を用いた262,144ワ−ド×16ビット構成のダイナミックランダ


    Original     		PDF J2G0026-17-41 MSM514260C/CSL MSM514260C/CSL 144-Word 16-Bit MSM514260C/CSLCMOS262 41CMOS 40SOJ44/40TSOP 5128ms512128msSL 40400milSOJ SOJ40

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY514260B 256KX16, CMOS DRAM w ith /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60


    OCR Scan     		PDF HY514260B 256KX16, 16-bit 16-bits 256Kx16

    CXK581020AJ

    Abstract: CXK581020AJ-25 32PIN CXK581020AJ-20 CXK58102QAJ scu32
    Text: SONY CXK581020AJ 131072-words x 8-bits High Speed CMOS Static RAM Description The CXK581020AJ is a high speed CM O S static 32 pin S O J Plastic RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply. The CXK581020AJ is suitable for use in high


    OCR Scan     		PDF 131072-words CXK581020AJ 20ns/25ns CXK581020AJ-20 CXK581020AJ-25 990mW 32PIN CXK58102QAJ scu32

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514280 /SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514280/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate the MSM514280/SL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM514280 144-Word 18-Bit MSM514280/SL 18-bit cycles/128ms

    schottky CST

    Abstract: tc5117805
    Text: TOSHIBA TC5117805CJ/CFT/CST-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORD BY 8-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117805CJ/CFT/CST is an EDO (hyper page) dynamic RAM organized as 2,097,152 words by 8 bits.


    OCR Scan     		PDF TC5117805CJ/CFT/CST-50 152-WORD TC5117805CJ/CFT/CST 28-pin TC5117805CJ/CFT/CST-24 SOJ28 schottky CST tc5117805

    GMM79256NS-70/80/10

    Abstract: No abstract text available
    Text: GoldStar GMM79256NS-70/80/10 262,144 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO, LTD. Description Features The GMM79256NS is a 256K x9 bits Dynamic RAM Module, mounted 2 pieces of 1M bit DRAM GM71C4256ASJ, 256K x4 sealed in 20 pin SOJ package and a 256K bit DRAM (GM71C256A, 2 5 6 K x l) in 18 pin PLCC package. The


    OCR Scan     		PDF GMM79256NS-70/80/10 GMM79256NS GM71C4256ASJ, GM71C256A, GM71C4256ASJ GMM79256NS GMM79256NS-70/80/10

    Untitled

    Abstract: No abstract text available
    Text: mosaic 2M x 32 SRAM MODULE semiconductor, inc. SYS322000ZK-015/020/025 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Issue 1.2 : April 1999 Fax No: (619) 674 2230 Description Features The SYS322000ZK is a plastic 64Mbit Static


    OCR Scan     		PDF SYS322000ZK-015/020/025 SYS322000ZK 64Mbit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 SERIES 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.


    OCR Scan     		PDF MC-428000A32 32-BIT 428000A32-60 428000A32-70 cycles/32 72-pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 S E R IE S 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.


    OCR Scan     		PDF MC-428000A32 32-BIT 110ns 428000A32-60 428000A32-70â b457525

    514260b

    Abstract: 514260 M5M51426 msm514260b
    Text: O K I Sem iconductor MSM514 2 6 0 B /B S L 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M 5M 514260B/BSL is a new generation Dynamic RAM organized as 262,144-w ord x 16-bit configuration. The technology used to fabricate the M SM 514260B/BSL is OKI's CMOS silicon gate process


    OCR Scan     		PDF MSM514260B/BSL 144-Word 16-Bit M5M514260B/BSL MSM514260B/BSL 128ms 514260b 514260 M5M51426 msm514260b

    CXK581020A

    Abstract: CXK581020AJ-25 SCU032-P-C400-A
    Text: SONY C X K 581020A J • ” *» 131072-words x 8-bits High Speed CMOS Static RAM Description 32 pin SO J Plastic The CXK581020AJ is a high speed CMOS static RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply.


    OCR Scan     		PDF 81020A 131072-words CXK581020AJ 20ns/25ns CXK581Q20AJ-20 CXK581020AJ-25 CXK581020AJ-20 990mW CXK581020A SCU032-P-C400-A

    514280

    Abstract: ZIP40-P-475
    Text: O K I Semiconductor M S M 5 1 4 2 8 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514280/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate the MSM514280/SL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM514280/SL_ 144-Word 18-Bit MSM514280/SL 128ms 514280 ZIP40-P-475

    Untitled

    Abstract: No abstract text available
    Text: »flYUNDA» > - • HY514260B 256Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(50, 60


    OCR Scan     		PDF HY514260B 256Kx16, 16-bit 16-bits