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    9408 DIODE Search Results

    9408 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    9408 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M54HC132

    Abstract: M54HC595KG M54HC138KG 920112001F
    Text: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics


    Original     		PDF M54HCxxx, M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 DocID17367 M54HC132 M54HC595KG M54HC138KG 920112001F

    940900703F

    Abstract: No abstract text available
    Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC


    Original     		PDF M54HCxxx M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 Flat-20 DIL-20 Flat-24 DIL-24 940900703F

    54HC4053

    Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
    Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC


    Original     		PDF M54HCxxx M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 Flat-20 DIL-20 Flat-24 DIL-24 54HC4053 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F

    940900701F

    Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
    Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC


    Original     		PDF M54HCxxx M54HCTxxx Flat-16 DIL-16 Flat-14 DIL-14 M54HCTxxx 940900701F 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F

    940806401F

    Abstract: No abstract text available
    Text: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage  Low power DC dissipation: 1 µA max. at 25 °C  High speed tPD = 8 ns typ. at 25 °C  Symmetrical outputs characteristics


    Original     		PDF M54HCxxx, M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 DocID17367 940806401F

    mlt 22

    Abstract: MCT thyristor IGBT DRIVER SCHEMATIC chip MOS-Controlled Thyristor k 3918 k 3918 regulator HIP2030 IGBT DRIVER SCHEMATIC mct thyristor datasheet photo thyristor
    Text: Harris Semiconductor No. AN9408.2 Harris Intelligent Power November 1994 The HIP2030 MCT/IGBT Gate Driver Provides Isolated Control Signals To Switch Power Devices Author: J. K. Azotea Introduction The Harris Fiber-Optic Isolated Gate Driver HFOIGD is designed to operate reliably at high isolation voltages, dv/dt’s,


    Original     		PDF AN9408 HIP2030 HIP2030, HIP2030EVAL, DB307A. mlt 22 MCT thyristor IGBT DRIVER SCHEMATIC chip MOS-Controlled Thyristor k 3918 k 3918 regulator IGBT DRIVER SCHEMATIC mct thyristor datasheet photo thyristor

    mlt 22

    Abstract: MCT thyristor k 3918 regulator Dual supply voltage regulator for 30vpp HIP2030 igbt subcircuit MOS Controlled Thyristor AN9408 HIP2030EVAL TLP2601
    Text: No. AN9408.2 Intersil Intelligent Power November 1994 The HIP2030 MCT/IGBT Gate Driver Provides Isolated Control Signals To Switch Power Devices Author: J. K. Azotea Introduction The Intersil Fiber-Optic Isolated Gate Driver HFOIGD is designed to operate reliably at high isolation voltages, dv/dt’s,


    Original     		PDF AN9408 HIP2030 mlt 22 MCT thyristor k 3918 regulator Dual supply voltage regulator for 30vpp igbt subcircuit MOS Controlled Thyristor HIP2030EVAL TLP2601

    MVME167

    Abstract: MVME162 MVME187 MVME197 MVME147 MVME MVME147S mvme712 51NW9626C17 MVME712B
    Text: MVME712-12, MVME712-13, MVME712A, MVME712AM, and MVME712B Transition Modules and LCP2 Adapter Board User’s Manual MVME712A/D3 Notice While reasonable efforts have been made to assure the accuracy of this document, Motorola, Inc. assumes no liability resulting from any omissions in


    Original     		PDF MVME712-12, MVME712-13, MVME712A, MVME712AM, MVME712B MVME712A/D3) EIA-232D MVME712x MVME712 MVME167 MVME162 MVME187 MVME197 MVME147 MVME MVME147S 51NW9626C17 MVME712B

    BYT51

    Abstract: BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M
    Text: BYT51. Vishay Telefunken Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current Applications 94 9539 Rectifiers Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage


    Original     		PDF BYT51. BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M D-74025 24-Jun-98 BYT51 BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M

    BYT51A

    Abstract: BYT51J BYT51K BYT51 BYT51B BYT51D BYT51G BYT51M diode 9409
    Text: BYT51. TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current Applications Rectifiers 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Reverse voltage,


    Original     		PDF BYT51. BYT51A BYT51B BYT51G BYT51J BYT51K BYT51M BYT51D D-74025 BYT51A BYT51J BYT51K BYT51 BYT51B BYT51D BYT51G BYT51M diode 9409

    diode 9409

    Abstract: BYT51 BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M
    Text: BYT51. TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current Applications Rectifiers 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Reverse voltage,


    Original     		PDF BYT51. BYT51A BYT51B BYT51G BYT51J BYT51K BYT51M BYT51D D-74025 diode 9409 BYT51 BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M

    SP SOT23-5

    Abstract: SPUSB1BJT
    Text: The following are examples of the implementation of ESD suppression. Contact Littelfuse for additional application assistance and design examples. Pb indicates that the provided solution is lead-free according to the definition set in EC336. indicates that the solution meets the requirements of RoHS.


    Original     		PDF EC333-C SP SOT23-5 SPUSB1BJT

    SCR gate drive circuit

    Abstract: DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1
    Text: App. Notes Design Tips Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors


    Original     		PDF INT-936 May-97 Jun-97 AN-936) Jun-96 SCR gate drive circuit DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1

    DT94-15

    Abstract: ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 HV Floating MOS-Gate Driver circuits GBAN-PVI-1 DT-93-4 AN-948
    Text: App. Notes Design Tips Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors


    Original     		PDF INT-936 AN-936) INT-937 Jun-96 Oct-98 DT94-15 ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 HV Floating MOS-Gate Driver circuits GBAN-PVI-1 DT-93-4 AN-948

    Untitled

    Abstract: No abstract text available
    Text: 8096 Radar Training System LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 03/2015 Radar Training System, LabVolt Series, 8096 Table of Contents General Description Topic


    Original     		PDF

    delta dps 298 cp

    Abstract: delta dps 298 cp-1 IRF 8030 irf 4710 bbc 598 479 DIODE F4049 sn 94042 Switching power supplies Delta electronics dps MR 4710 ci 4047B
    Text: FAIRCHILD BIPOLAR M IC R O P R O C E S S O R □ATABOOK MACROLOGIC BIPOLAR MICROPROCESSOR OATABOOK FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C alifo rn ia 9 4 0 4 2 c 1976 F a i r c h il d C a m e r a a n d In s t r u m e n t C o r p o r a t i o n / 4 6 4 E llis S t r e e t , M o u n t a i n V i e w , C a li f o r n ia 9 4 0 4 2 / 4 1 5 9 6 2 - 5 0 1 1 / T W X


    OCR Scan     		PDF Corporation/464 962-5011/TWX Tech-71-038 delta dps 298 cp delta dps 298 cp-1 IRF 8030 irf 4710 bbc 598 479 DIODE F4049 sn 94042 Switching power supplies Delta electronics dps MR 4710 ci 4047B

    Untitled

    Abstract: No abstract text available
    Text: BYT51. Vishay Telefunken ▼ Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current Applications Rectifiers Absolute Maximum Ratings Tj = 2 5 °C Param eter R everse voltage =R epetitive peak reverse voltage


    OCR Scan     		PDF BYT51. BYT51A BYT51 BYT51D BYT51G BYT51J BYT51M D-74025 24-Jun-98

    metelics FSCM 59365

    Abstract: 082C 064c 4500a 082-T86 087-C12 a 4504 450101 4500b-01 34064
    Text: HE M E T E L I C S CORP 0 | bOS135E 000013^ □ | VARACTORS ' metelics 30-Volt M S V 34,000 Series 45-Volt M S V 38,000 Series 60-Volt M S V 40,000 Series CORPORATION Features Applications • H igh -Q • T u nin g oscillators, filters an d resonators • L o w leakage


    OCR Scan     		PDF bOS135E 30-Volt 45-Volt 60-Volt MSV-34 060-C 000A-01 064-C11 3000B-0Ã metelics FSCM 59365 082C 064c 4500a 082-T86 087-C12 a 4504 450101 4500b-01 34064

    MAX826

    Abstract: X626
    Text: 190863: Rev 1; 8/96 A lilX IA I The m x m rm are dual m onolithic power M OSFET drivers designed to translate T T L inputs to high voltage/curw rt o ito u ts. The MAX626 Is a dual Inverting power M O ^ TT driver. The MAX627 is a dual non-lnvertkifl power M OSFET driver, « id the MAX628


    OCR Scan     		PDF T8C428/7/8 MAX626 MAX627 MAX628 MAX826 X626

    Untitled

    Abstract: No abstract text available
    Text: 74LVC240A Octal buffer/line driver with 5-volt tolerant inputs/outputs; inverting 3-State Product specification IC24 Data Handbook Philips Semiconductors 1998 May 20 Hi Sm M PHILIPS Philips Semiconductors Product specification Octal buffer/line driver with 5-volt


    OCR Scan     		PDF 74LVC240A 74LVC240A

    zenerdiode 218

    Abstract: SMPS battery tea1100 philips tea charger 16 pin EA1100T TEA1100T
    Text: INTEGRATED CIRCUITS im m 1C m TEA1100; TEA1100T Battery monitor for NiCd and NiMH chargers May 1992 Preliminary specification File under Integrated Circuits, IC03 Philips Semiconductors PHILIPS / PHILIPS Preliminary specification Philips Semiconductors Battery monitor for NiCd and NiMH


    OCR Scan     		PDF TEA1100; TEA1100T TEA1100- zenerdiode 218 SMPS battery tea1100 philips tea charger 16 pin EA1100T TEA1100T

    ic 9399 g

    Abstract: hp cartridge pinout
    Text: Bipolar/JFET, Audio Operational Amplifier 0P176* ANALOG DEVICES □ PIN CONNECTIONS FEATURES _ Low Noise: 6 nV/\'Hz High Slew Rate: 25 V/jis Wide Bandwidth: 10 MHz Low Supply Current: 2.5 mA Low Offset Voltage: 1 mV Unity Gain Stable SO-8 Package -Lead Narrow-Body SO


    OCR Scan     		PDF 0P176* 59E-9 333E3 743E-3 10E-3 1E-12) ic 9399 g hp cartridge pinout

    B331 transistor

    Abstract: transistor b331 Transistor B28D A 42 B331 transistor A 92 B331 transistor A 42 B331 transistor B324 KT 117A 851B52 intel 8049 microcomputer
    Text: 1 AP-91 USING THE 8049 AS AN 80 COLUMN PRINTER CONTROLLER I. INTRODUCTION This A pplication N ote d eta ils u sin g I N T E L ’S 8049 m icrocom puter a s a d ot m atrix p rin ter controller. P re v io u s I N T E L A pplication n o tes, e.g. AP-27 and AP-54 d escrib e d usin g in telligen t p ro c e sso rs and p eri­


    OCR Scan     		PDF AP-91 AP-27 AP-54) B331 transistor transistor b331 Transistor B28D A 42 B331 transistor A 92 B331 transistor A 42 B331 transistor B324 KT 117A 851B52 intel 8049 microcomputer

    relay ras 1210

    Abstract: asea RRME rrmh2 ASEA RMA16 RRMH RRME 1608 rrMH 2-107 MX 0842 RRMH ASEA rrme1
    Text: R K Ii E AUXILIARY RELAYS , . -v lp f f ig g , • several designs > ; .< -,v . • " : ^ • ¿ 5 | 8 ly • heavy-current design • plug-ln lypes i - • types for fixed mounting " - . • suitable fo r tropical conditions £•■■ , v . y ^ - -p * & p .


    OCR Scan     		PDF RMX17 RRM17 relay ras 1210 asea RRME rrmh2 ASEA RMA16 RRMH RRME 1608 rrMH 2-107 MX 0842 RRMH ASEA rrme1