942 rectifier diode
Abstract: No abstract text available
Text: tSENSITRON 203CNQ080 203CNQ100 SEMICONDUCTOR TECHNICAL DATA DATA SHEET, 942, REV. - PLASTIC POWER SCHOTTKY RECTIFIER 80/100 V, 200 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:
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203CNQ080
203CNQ100
942 rectifier diode
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Schottky diode wafer
Abstract: No abstract text available
Text: Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Case Style 942 Features ● ● ● ● ● ● Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available Minimum Parasitics for Broadband Designs
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MA40278,
MA40279
Schottky diode wafer
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Voltage Doubler application
Abstract: voltage doubler Schottky Doubler application of voltage doubler Microwave detector diodes detector diode chip diode agilent 5964-4236E
Text: Schottky Diode Voltage Doubler Application Note 956-4 Circuit Description Figure 1 shows a simple voltage doubler circuit that was assembled in Agilent Package 60 and tested at 2 GHz. In this version of the doubler, opposite polarity chips are needed. The
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5964-4236E
Voltage Doubler application
voltage doubler
Schottky Doubler
application of voltage doubler
Microwave detector diodes
detector diode
chip diode agilent
5964-4236E
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Voltage Doubler application
Abstract: application of voltage doubler Schottky Doubler Microwave detector diodes microwave detector diode 5082-0009 stub tuner matching
Text: hH Schottky Diode Voltage Doubler Application Note 956-4 Circuit Description Figure 1 shows a simple voltage doubler circuit that was assembled in HP Package 60 and tested at 2 GHz. In this version of the doubler, opposite polarity chips are needed. The shunt chip
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5964-4236E
Voltage Doubler application
application of voltage doubler
Schottky Doubler
Microwave detector diodes
microwave detector diode
5082-0009
stub tuner matching
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application of voltage doubler
Abstract: Voltage Doubler application Microwave detector diodes Schottky Doubler angelo rf power detector voltage doubler Avago Technologies Schottky Avago Application Note 956-4 Schottky Diode Voltage Doubler microwave detector diode diode 1.e
Text: Schottky Diode Voltage Doubler Application Note 956-4 Performance Diode detectors may be combined in various ways to produce higher output voltages than would be produced by a single diode. This note describes a microwave circuit that combines the detected output of two diodes to produce a detector with double the usual voltage sensitivity.
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5964-4236E
AV02-1440EN
application of voltage doubler
Voltage Doubler application
Microwave detector diodes
Schottky Doubler
angelo
rf power detector voltage doubler
Avago Technologies Schottky
Avago Application Note 956-4 Schottky Diode Voltage Doubler
microwave detector diode
diode 1.e
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Voltage Doubler application
Abstract: application of voltage doubler Schottky Doubler Voltage Doubler introduction rf power detector voltage doubler 5964-4236E stub tuner matching 5082-0023
Text: Schottky Diode Voltage Doubler Application Note 956-4 Circuit Description Figure 1 shows a simple voltage doubler circuit that was assembled in HP Package 60 and tested at 2 GHz. In this version of the doubler, opposite polarity chips are needed. The shunt chip
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5964-4236E
Voltage Doubler application
application of voltage doubler
Schottky Doubler
Voltage Doubler introduction
rf power detector voltage doubler
5964-4236E
stub tuner matching
5082-0023
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diode hp 2835 schottky
Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship
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5082-2835 diode
Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship
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Waveform Clipping With Schottky
Abstract: ne5532 thd NE5532 application notes 79L05 National Semiconductor AN20 78l05 IC hp5082-2810 78l05 national semiconductor 78L05 78L05 national
Text: AN20 Application Note ADC INPUT BUFFER AND PROTECTION TECHNIQUES By Steven Green 51 Ω 78L05 +15V + 1 uF CR5 5.6V 2k Left Analog Input CR1 2k CR2 0.1 uF 2k 10 nF CS5336 CS5338 CS5339 51 Ω R2 27 10 nF CR3 -15V 0.1 uF 2 AINL 2k Right Analog Input 25 VL+ BAT-85
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78L05
CS5336
CS5338
CS5339
BAT-85
HP5082-2810
79L05
MSAN-107:
AN20REV2
Waveform Clipping With Schottky
ne5532 thd
NE5532 application notes
79L05
National Semiconductor AN20
78l05 IC
hp5082-2810
78l05 national semiconductor
78L05
78L05 national
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MOSFET P-channel SOT-23
Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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2N7000
2N7002L
MOSFET60
OT-23
BS107,
BS107A
BS108
BS170
NUD3124
NUD3160
MOSFET P-channel SOT-23
NTD80N02
NTD18N06
NTMS3P03R2
MLD1N06CL
NTHD5904N
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Untitled
Abstract: No abstract text available
Text: VFM STEP-UP DC/DC CONVERTER CONTROLLER NO. EA-042-130502 RN5RY202 OUTLINE The RN5RY202 Series are CMOS - based VFM chopper Control ICs for step-up DC/DC converter with an external power transistor featuring high output voltage accuracy and low supply current. Each of the RN5RY202 Series ICs
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EA-042-130502
RN5RY202
RN5RY202
Room403,
Room109,
10F-1,
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Untitled
Abstract: No abstract text available
Text: R1 2 4 0 x SERI ES 1.2A, 30V Step Down DC/DC converter NO.EA-190-111123 OUTLINE The R1240x series are CMOS-based Step-down DC/DC converter with internal Nch high side Tr. 0.35Ω , which can provide the maximum 1.2A output current. The ICs consists of an Oscillator, a PWM control circuit, a
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EA-190-111123
R1240x
Room403,
Room109,
10F-1,
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Untitled
Abstract: No abstract text available
Text: VFM STEP-UP DC/DC CONVERTER CONTROLLER NO. EA-030-130502 RN5RYxx1 SERIES OUTLINE The RN5RYxx1 Series are CMOS-based VFM Control ICs for step-up DC/DC converter with an external driver transistor featuring high output voltage accuracy and low supply current. Each of the RN5RYxx1 Series ICs
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EA-030-130502
OT-23-5(
Room403,
Room109,
10F-1,
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R1240N
Abstract: KTS500B106M55N0T00 R1240N001-TR-FE R1240N001 GRM31CR71E106K NIPPON CAPACITORS MA24D60 CHEMICON Current is small or the Output Voltage is unstable irp 942
Text: R1240x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-190-101006 OUTLINE The R1240x series are CMOS-based Step-down DC/DC converter with internal Nch high side Tr. 0.35Ω , which can provide the maximum 1.2A output current. The ICs consists of an Oscillator, a PWM control circuit, a
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R1240x
EA-190-101006
Room403,
Room109,
10F-1,
R1240N
KTS500B106M55N0T00
R1240N001-TR-FE
R1240N001
GRM31CR71E106K
NIPPON CAPACITORS
MA24D60
CHEMICON Current is small or the Output Voltage is unstable
irp 942
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942 DIODE schottky
Abstract: No abstract text available
Text: an A M P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Features • • • • • • Case Style 942 Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available
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MA40278,
MA40279
942 DIODE schottky
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Features • • • • • • Case Style 942 Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available
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MA40278,
MA40279
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Untitled
Abstract: No abstract text available
Text: MA40278 and MA40279 Series Schottky Barrier Beam-Lead Anti-Parallel Pairs Features • SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY ■ CLOSELY MATCHED JUNCTIONS ■ THREE DIODE BARRIER HEIGHTS ARE AVAILABLE ■ DEVICES 100% TESTED ■ MINIMUM PARASITICS FOR
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MA40278
MA40279
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Untitled
Abstract: No abstract text available
Text: yflftC O H _ MA40278 and MA40279 Series Schottky Barrier Beam-Lead Anti-Parallel Pairs Features • SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY ■ CLOSELY MATCHED JUNCTIONS ■ THREE DIODE BARRIER HEIGHTS ARE AVAILABLE
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MA40278
MA40279
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MA40278
Abstract: No abstract text available
Text: M/A-COM SEMICOND t BRLNGTON 11 » • S h M E 2 m QQQ13QÔ 5 ■ M I C MA40278 and MA40279 Series Schottky Barrier Beam-Lead Anti-Parallel Pairs Features ■ SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY ■ CLOSELY MATCHED JUNCTIONS ■ THREE DIODE BARRIER HEIGHTS ARE
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QQQ13QÔ
MA40278
MA40279
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Untitled
Abstract: No abstract text available
Text: a n AM P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Case Style 942 Features • • • • • • Small Physical Size for Microstrip M ounting High Reliability Closely M atched Junctions Three D iode Barrier Heights are Available
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MA40278,
MA40279
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V 2.00 Case Style 942 Features • • • • • • Small Physical Size for Microstrip M ounting High Reliability Closely M atched Junctions Three D iode Barrier H eights are Available
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MA40278,
MA40279
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5082-2815
Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
Text: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS
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0005fc
1N5711
1N5712
1N5711,
1N5712,
i712-
1n57h
1n5712
5082-2815
5082-2970
5082-2805
5082-2813
5082-2308
5082-2804
diode+hp+2835+schottky
5082-2826
5082-2997
5082-2912
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smd diode GW
Abstract: diode ESM 315 K451
Text: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =
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IRF7523D1
Rf7523d1
smd diode GW
diode ESM 315
K451
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5082-2815
Abstract: No abstract text available
Text: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS
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44475fi4
1N5711
1N5712
1N5711,
1N5712,
Figure12.
5082-2815
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