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    IRF3710PBF

    Abstract: IRF1010
    Text: PD - 94954D IRF3710PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description


    Original     		94954D IRF3710PbF O-220 O-220AB IRF3710PBF IRF1010 PDF

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    Abstract: No abstract text available
    Text: PD - 94954D IRF3710PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description


    Original     		94954D IRF3710PbF O-220 O-220AB PDF