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    Untitled

    Abstract: No abstract text available
    Text: PD - 94974B IRLML2803PbF l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free G 1 VDSS = 30V 3 D S RDS(on) = 0.25Ω


    Original     		PDF 94974B IRLML2803PbF OT-23 EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94974B IRLML2803PbF l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free G 1 VDSS = 30V 3 D S RDS(on) = 0.25Ω


    Original     		PDF 94974B IRLML2803PbF OT-23 EIA-481 EIA-541.