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    9532 MOSFET Search Results

    9532 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    9532 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA-541

    Abstract: IRF7702 IRF7754
    Text: PD - 94224 IRF7754 HEXFET Power MOSFET l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package l VDSS RDS on max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V -3.9A -4.6A Description TSSOP-8 Absolute Maximum Ratings


    Original     		PDF IRF7754 MO-153AA) EIA-481 EIA-541. EIA-541 IRF7702 IRF7754

    EIA-541

    Abstract: IRF7751
    Text: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier


    Original     		PDF IRF7751 EIA-481 EIA-541. EIA-541 IRF7751

    EIA-541

    Abstract: IRF7702 IRF7756 60v 10KHz ir MOSFET
    Text: PD -94159 IRF7756 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -12V 0.040@VGS = -4.5V 0.058@VGS = -2.5V ±4.3A 0.087@VGS = -1.8V ±2.2A


    Original     		PDF IRF7756 MO-153AA) EIA-481 EIA-541. EIA-541 IRF7702 IRF7756 60v 10KHz ir MOSFET

    EIA-541

    Abstract: IRF7751 TSSOP-8 footprint 7702 ST irf 146
    Text: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier


    Original     		PDF IRF7751 EIA-541 IRF7751 TSSOP-8 footprint 7702 ST irf 146

    EIA-541

    Abstract: IRF7702 IRF7754
    Text: PD - 94224 IRF7754 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V -3.9A


    Original     		PDF IRF7754 MO-153AA) EIA-481 EIA-541. EIA-541 IRF7702 IRF7754

    diode code yw

    Abstract: IRF7702 IRF7706 9532 mosfet
    Text: PD -94003 IRF7706 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 22mΩ@VGS = -10V 36mΩ@VGS = -4.5V -7.0A -5.6A Description HEXFET® Power MOSFETs from International Rectifier


    Original     		PDF IRF7706 D52-7105 diode code yw IRF7702 IRF7706 9532 mosfet

    MOSFET TSSOP-8 dual n-channel

    Abstract: EIA-541 IRF7702 IRF7757
    Text: PD - 94174 IRF7757 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Common Drain Configuration VDSS 20V Ω) RDS(on) max (mΩ) ID 35@VGS = 4.5V 40@VGS = 2.5V


    Original     		PDF IRF7757 MO-153AA) EIA-481 EIA-541. MOSFET TSSOP-8 dual n-channel EIA-541 IRF7702 IRF7757

    Untitled

    Abstract: No abstract text available
    Text: PD - 94001A IRF7705 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS Ω) RDS(on) max (mΩ) ID -30V 18 @VGS = -10V 30 @VGS = -4.5V -8.0A -6.0A Description


    Original     		PDF 4001A IRF7705 MO-153AA) EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD -93995 IRF7755 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -20V 51mΩ@VGS = -4.5V 86mΩ@VGS = -2.5V -3.7A -2.8A Description HEXFET® Power MOSFETs from International Rectifier


    Original     		PDF IRF7755 S252-7105

    diode 838

    Abstract: ST 7702 irf 439
    Text: PD - 94001 IRF7705 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 18mΩ@VGS = -10V 30mΩ@VGS = -4.5V -8.0A -6.0A Description HEXFET® power MOSFETs from International Rectifier


    Original     		PDF IRF7705 diode 838 ST 7702 irf 439

    Untitled

    Abstract: No abstract text available
    Text: PD -94003 IRF7706 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 22mΩ@VGS = -10V 36mΩ@VGS = -4.5V -7.0A -5.6A Description HEXFET® Power MOSFETs from International Rectifier


    Original     		PDF IRF7706

    IRF7702

    Abstract: IRF7755
    Text: PD -93995A IRF7755 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -20V 51mΩ@VGS = -4.5V 86mΩ@VGS = -2.5V -3.7A -2.8A Description HEXFET® Power MOSFETs from International Rectifier


    Original     		PDF -93995A IRF7755 MO-153AA) EIA-481 EIA-541. IRF7702 IRF7755

    EIA-541

    Abstract: IRF7702
    Text: PD - 93849C IRF7702 PROVISIONAL HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS -12V 1 Description RDS(on) max ID 0.014@VGS = -4.5V 0.019@VGS = -2.5V


    Original     		PDF 93849C IRF7702 EIA-541 IRF7702

    IRF7702

    Abstract: IRF7707
    Text: PD -93996 IRF7707 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -20V 22mΩ@VGS = -4.5V 33mΩ@VGS = -2.5V -7.0A -6.0A Description HEXFET® Power MOSFETs from International Rectifier


    Original     		PDF IRF7707 IRF7702 IRF7707

    HEXFET SO-8

    Abstract: MOSFET TSSOP-8 TSSOP-8 footprint EIA-541 IRF7702 IRF7756
    Text: PD -94159A IRF7756 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -12V 0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V ±4.3A ±3.4A


    Original     		PDF -94159A IRF7756 MO-153AA) EIA-481 EIA-541. HEXFET SO-8 MOSFET TSSOP-8 TSSOP-8 footprint EIA-541 IRF7702 IRF7756

    Untitled

    Abstract: No abstract text available
    Text: PD - 93849C IRF7702 PROVISIONAL HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS -12V 1 Description 2 HEXFET® 3 Power MOSFETs from International Rectifier


    Original     		PDF 93849C IRF7702

    marking code YW DIODE

    Abstract: IRF7606
    Text: PD - 91264E IRF7606 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -30V RDS(on) = 0.09Ω


    Original     		PDF 91264E IRF7606 EIA-481 EIA-541. marking code YW DIODE IRF7606

    IRF7700

    Abstract: IRF7702 diode code yw
    Text: PD - 93894A IRF7700 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS RDS(on) max ID -20V 0.015@VGS = -4.5V -8.6A 0.024@VGS = -2.5V -7.3A Description HEXFET® power MOSFETs from International Rectifier


    Original     		PDF 3894A IRF7700 IRF7700 IRF7702 diode code yw

    Micro8 Package

    Abstract: No abstract text available
    Text: PD - 91264E IRF7606 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -30V RDS(on) = 0.09Ω


    Original     		PDF 91264E IRF7606 EIA-481 EIA-541. Micro8 Package

    IRF9530

    Abstract: IRF9530 mosfet F9530 diode 9532 IRF9530, IRF9530 P-channel power
    Text: P-CHANNEL POWER MOSFETS IRF9530/9531/9532/9533 FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF IRF9530/9531/9532/9533 IRF9530 IRF9531 IRF9532 F9533 IRF9530 mosfet F9530 diode 9532 IRF9530, IRF9530 P-channel power

    F9530

    Abstract: 9533E IRF9530
    Text: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF9530, IRF9533 -100V IRF9531, IRF9532 IRF9533 IRF9532, F9533 92CS-43327 F9530 9533E IRF9530

    f9530

    Abstract: IRF9530 L 9132 diode 9532 IRF9530 mosfet IRF9530* p-channel power MOSFET 9532 mosfet IR mosfets OA 91 diode ir 9133
    Text: IRF9530/9531 /9532Z9533 IRFP9130/9131 /9132/9133 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area


    OCR Scan     		PDF IRF9530/9531 /9532Z9533 IRFP9130/9131 O-220 F9530/9531 F9531 /IRFP91 IRFP9130/91 IRF9530/9531/9532/9533 IRFP9130/9131/9132/9133 f9530 IRF9530 L 9132 diode 9532 IRF9530 mosfet IRF9530* p-channel power MOSFET 9532 mosfet IR mosfets OA 91 diode ir 9133

    1rf9530

    Abstract: IRF9530 IRF9530 mosfet IRF9531 L 9132 IRF9530* p-channel power MOSFET IRF9532 9133 1RF953 IRFP9131
    Text: SA M S UN G E L E C T R O N I C S INC b4E D IR F 9 5 3 0 /9 5 3 1 Z9 5 3 2 / 9 5 3 3 I R F P 9 1 3 0 /9 1 3 1 /9 1 3 2 /9 1 3 3 j • T T b H l H E D D I S E S M Ö D 1! P-CHANNEL POWER MOSFETS FEATU RES • • • • • • • TO-220 Lower R d s o n


    OCR Scan     		PDF IRF9530/9531Z9532/9533 IRFP9130/9131/9132/9133 IRF9530/IRFP9130 -100V IRF9531 /IRFP91 IRF9532/IRFP91 IRF9533/IRFP9133 O-220 1rf9530 IRF9530 IRF9530 mosfet L 9132 IRF9530* p-channel power MOSFET IRF9532 9133 1RF953 IRFP9131

    MARKING tAN SOT-23

    Abstract: Lm 304 PN MARKING tAN SOT-23 diode diode smd yw diode SMD MARKING CODE yw l6302 smd SOT23 diode marking 2F st smd diode marking code ex st smd diode marking code "LE" smd diode marking LM
    Text: PD - 9.1258B International TSR Rectifier IRLML2803 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching


    OCR Scan     		PDF OT-23 1258B IRLML2803 MARKING tAN SOT-23 Lm 304 PN MARKING tAN SOT-23 diode diode smd yw diode SMD MARKING CODE yw l6302 smd SOT23 diode marking 2F st smd diode marking code ex st smd diode marking code "LE" smd diode marking LM