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    FW206

    Abstract: No abstract text available
    Text: FW206 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 4-volt-drive, N channel MOSFET in one package.


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    PDF FW206 1000mm 960126TM2fXHD FW206