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    2SK2617LS

    Abstract: 2SK2617
    Text: 2SK2617LS N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current (Pulse)


    Original     		2SK2617LS O-220FI 960202TM2fXHD 2SK2617LS 2SK2617 PDF