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    EIA-541

    Abstract: No abstract text available
    Text: PD - 96066B IRF1902UPbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS ID 85@VGS = 4.5V 170@VGS = 2.7V 4.0A 3.2A 20V Description These N-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing


    Original     		96066B IRF1902UPbF EIA-481 EIA-541. EIA-541 PDF