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    10BQ040

    Abstract: EIA-541 IRF7805Q
    Text: PD – 96114B IRF7805QPbF Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free l l l l l l l Description These HEXFET Power MOSFET's in package utilize the lastest processing techniques to achieve


    Original     		96114B IRF7805QPbF EIA-481 EIA-541. 10BQ040 EIA-541 IRF7805Q PDF

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    Abstract: No abstract text available
    Text: PD – 96114B IRF7805QPbF Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free l l l l l l l A D 1 8 S 2 7 D S 3 6 D G 4 5 D S Description These HEXFET Power MOSFET's in package utilize


    Original     		96114B IRF7805QPbF EIA-481 EIA-541. PDF