n322ad
Abstract: No abstract text available
Text: PWM Optimized ISL9N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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Original
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ISL9N322AD3ST
970pF
O-252
n322ad
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PDF
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N322AP
Abstract: ISL9N322AS3ST N322A ISL9N322AP3 7E10 N322 N322AS
Text: ISL9N322AP3/ISL9N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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Original
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ISL9N322AP3/ISL9N322AS3ST
970pF
O-263AB
O-220AB
N322AP
ISL9N322AS3ST
N322A
ISL9N322AP3
7E10
N322
N322AS
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PDF
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n322ad
Abstract: ISL9N322AD3ST N-322 N322 16E-3
Text: PWM Optimized ISL9N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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Original
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ISL9N322AD3ST
970pF
O-252
n322ad
ISL9N322AD3ST
N-322
N322
16E-3
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PDF
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Untitled
Abstract: No abstract text available
Text: FQD45N03L N-Channel Logic Level MOSFETs 30V, 20A, 0.023Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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Original
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FQD45N03L
970pF
O-252AA
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PDF
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*45N03L
Abstract: TO-252AA fairchild FQD45N03L
Text: FQD45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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Original
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FQD45N03L
970pF
O-252
*45N03L
TO-252AA fairchild
FQD45N03L
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PDF
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N322AS
Abstract: No abstract text available
Text: ISL9N322AP3/ISL9N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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Original
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ISL9N322AP3/ISL9N322AS3ST
970pF
O-263AB
N322AS
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PDF
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FQD45N03L
Abstract: 848e3 MF-10 SPICE model
Text: FQD45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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Original
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FQD45N03L
970pF
O-252
FQD45N03L
848e3
MF-10 SPICE model
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PDF
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