2n7615
Abstract: 2N761
Text: PD-97260A 2N7615U6 IRHLQ77214 250V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT LCC-28 TECHNOLOGY Product Summary Part Number IRHLQ77214 IRHLQ73214 Radiation Level RDS(on) 100K Rads (Si) 1.0Ω 300K Rads (Si) 1.0Ω ID 2.6A
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Original
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PD-97260A
LCC-28)
IRHLQ77214
IRHLQ73214
2N7615U6
LCC-28
MIL-STD-750,
MlL-STD-750,
2n7615
2N761
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PDF
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IRF6641TR1PBF
Abstract: IRF6641TRPBF
Text: PD - 97262 IRF6641TRPbF DirectFET Power MOSFET Typical values unless otherwise specified RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket
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IRF6641TRPbF
IRF6641PbF
IRF6641TR1PBF
IRF6641TRPBF
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PDF
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ir 429c
Abstract: AN-994 IRF1324S-7P 429AD 429C
Text: PD - 97263A IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits
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Original
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7263A
IRF1324S-7PPbF
ir 429c
AN-994
IRF1324S-7P
429AD
429C
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97262A IRF6641TRPbF DirectFET Power MOSFET Typical values unless otherwise specified l l l l l l l l l RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket
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Original
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7262A
IRF6641TRPbF
IRF6641PbF
comb04
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PDF
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AN-994
Abstract: 5MAD IRF1324S-7PPBF 429AD High Efficiency Synchronous Rectification in SMPS IRF1324S-7P
Text: PD - 97263 IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits
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Original
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IRF1324S-7PPbF
AN-994.
AN-994
5MAD
IRF1324S-7PPBF
429AD
High Efficiency Synchronous Rectification in SMPS
IRF1324S-7P
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PDF
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AN-994
Abstract: ir 429c
Text: PD - 97263 IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits
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Original
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IRF1324S-7PPbF
AN-994
ir 429c
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97269A IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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7269A
IRGB4045DPbF
O-220AB
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PDF
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mascot 9726
Abstract: MIL-HDBK-217F 60601-1 D-88069 SP11 hella 9726-2026
Text: 9726-2026 Max. 96 W AC/DC SWITCH MODE POWER SUPPLIES 2026 - med / with Power Factor Correction PFC • Universal inngangsspenning • Medisinsk godkjenning, EN 60601-1 • 3 pins IEC 320 kontakt. • Nettledning vedlagt • Kortslutningssikker • Sekundærledning eller Hellakontakt
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N-1601
D-88069
F-14200
B-9400
mascot 9726
MIL-HDBK-217F
60601-1
SP11
hella
9726-2026
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97269A IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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Original
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7269A
IRGB4045DPbF
O-220AB
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PDF
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MJ 15005 transistor
Abstract: ir 429c IRF 1640 IRF1324S AN-994 IRF1324S-7PPBF 7PPB
Text: PD - 97263 IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits
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Original
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IRF1324S-7PPbF
MJ 15005 transistor
ir 429c
IRF 1640
IRF1324S
AN-994
IRF1324S-7PPBF
7PPB
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PDF
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HEXFET SO-8
Abstract: IRF6641TR1PBF IRF6641TRPBF
Text: PD - 97262A IRF6641TRPbF DirectFET Power MOSFET Typical values unless otherwise specified l l l l l l l l l RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket
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Original
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7262A
IRF6641TRPbF
IRF6641PbF
HEXFET SO-8
IRF6641TR1PBF
IRF6641TRPBF
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PDF
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2n7632
Abstract: IRHLUC7670Z4 2N763
Text: PD-97268A 2N7632UC IRHLUC7670Z4 RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT LCC-6 Product Summary Part Number Radiation Level IRHLUC7670Z4 100K Rads (Si) IRHLUC7630Z4 300K Rads (Si) RDS(on) ID 0.75Ω
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PD-97268A
2N7632UC
IRHLUC7670Z4
IRHLUC7630Z4
MIL-PRF-19500/255L
2n7632
IRHLUC7670Z4
2N763
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PDF
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Untitled
Abstract: No abstract text available
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2401 Sep-97 9726 B2 CARSEM DM715208AEA 1.2µ OX/NI 03 TO-92 STRESS/JOB NO. Infant / High voltage Life 125°C, 7.0 V. P-20432, P-20478 READPOINT
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Sep-97
P-20432,
P-20478
P-20479
P-20480
C/100%
P-20481
DM715208AEA
DS2401
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PDF
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LM137A
Abstract: smd 20w
Text: PD- 97267 Three Terminal, Adjustable Negative Voltage Regulator OM1325NM 1.5A Product Summary: Part Number Standard Military Drawing Number VIN Adjustable VOUT Package OM1325NM 7703406N -4.25V to -41.25V -1.2V to -37V SMD-1 SMD-1 These three terminal negative voltage regulators are
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OM1325NM
7703406N
LM137A
MIL-PRF-38535
LM137A
smd 20w
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PDF
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PD-97260
Abstract: IRHLQ73214 IRHLQ77214 2N7615U6 2n7615
Text: PD-97260 2N7615U6 IRHLQ77214 250V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT LCC-28 TECHNOLOGY Product Summary Part Number IRHLQ77214 IRHLQ73214 Radiation Level RDS(on) 100K Rads (Si) 1.0Ω 300K Rads (Si) 1.0Ω ID 2.6A
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Original
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PD-97260
2N7615U6
IRHLQ77214
LCC-28)
IRHLQ73214
LCC-28
MIL-STD-750,
MlL-STD-750,
PD-97260
IRHLQ73214
IRHLQ77214
2N7615U6
2n7615
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PDF
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0234
Abstract: LTC1261 R320 9449
Text: RELIABILITY DATA LTC1261 / 1429 / 1430 / 1550 / 1551 / 3830 / 3831 / 3832 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE SIDEBRAZE PLASTIC DIP SOIC/SOT/MSOP 116 9726 48 9526 709 9426 873 • PRESSURE COOKER TEST AT 15 PSIG, +121°C
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Original
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LTC1261
00-03-6209B.
0234
R320
9449
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-97260A 2N7615U6 IRHLQ77214 250V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT LCC-28 TECHNOLOGY Product Summary Part Number IRHLQ77214 IRHLQ73214 Radiation Level RDS(on) 100K Rads (Si) 1.0Ω 300K Rads (Si) 1.0Ω ID 2.6A
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Original
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PD-97260A
2N7615U6
IRHLQ77214
LCC-28)
IRHLQ73214
LCC-28
MIL-STD-750,
MlL-STD-750,
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PDF
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2N763
Abstract: 2N7632UC IRHLUC7630Z4
Text: PD-97268 2N7632UC IRHLUC7670Z4 60V, Combination 1N-1P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET SURFACE MOUNT LCC-6 Product Summary Part Number Radiation Level IRHLUC7670Z4 100K Rads (Si) IRHLUC7630Z4 300K Rads (Si) RDS(on) ID 0.75Ω
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Original
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PD-97268
2N7632UC
IRHLUC7670Z4
IRHLUC7630Z4
MIL-PRF-19500/255L
2N763
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97269 IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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IRGB4045DPbF
O-220AB
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PDF
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20306
Abstract: P-20306 P-20230
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1225AB Aug-97 9726 S DALLAS DA094689 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-20232 48 Hr
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Original
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Aug-97
P-20232
P-20305
P-20306
DA094689
DS1225AB
P-20231
P-20230
20306
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PDF
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CI 4016
Abstract: TR400-6 400v 20A ultra fast recovery diode power Diode 400V 20A IRGB4045DPBF
Text: PD - 97269 IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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Original
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IRGB4045DPbF
O-220AB
CI 4016
TR400-6
400v 20A ultra fast recovery diode
power Diode 400V 20A
IRGB4045DPBF
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PDF
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20306
Abstract: P-20306 Analysis DS1225AB
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1225AB Aug-97 9726 S DALLAS DA094689 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-20232 48 Hr
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Original
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DS1225AB
Aug-97
DA094689
P-20232
P-20305
P-20306
P-20231
P-20230
20306
P-20306
Analysis
DS1225AB
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PDF
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DS17485
Abstract: P-21031
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY DS17485 Nov-97 9726 A2 ANAM, K. STRESS/JOB NO. ASSEMBLY LOT NO DN713702AAC 0.8µ OX/NI 2 MTL READPOINT (Sample Size/No. of Fails) Preconditioning (P/C): 0 Hr Bake, 125°C, 24 Hr 250/0 Moisture Soak, 30°C/60% RH, 144 Hr
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Original
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DS17485
Nov-97
DN713702AAC
P-20859
P-20960
P-20961,
P-21028
P-21029
DS17485
P-21031
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PDF
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CARSEM
Abstract: DS2401
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2401 Sep-97 9726 B2 CARSEM DM715208AEA 0.8µ OX/NI 03 TO-92 STRESS/JOB NO. Infant / High voltage Life 125°C, 7.0 V. P-20432, P-20478 READPOINT
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Original
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DS2401
Sep-97
DM715208AEA
P-20432,
P-20478
P-20479
P-20480
C/100%
P-20481
CARSEM
DS2401
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PDF
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