mrf555
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB
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MRF553
BFR91
BFR90
MRF545
MRF544
MRF553
mrf555
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2N5179
Abstract: MRF553 1N4148 2N4427 2N6255 MRF4427 MRF559 MRF607 MRF5943C 2n5179 chip
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB
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MRF553
MRF571
BFR91
BFR90
MRF545
MRF544
MSC1316
2N5179
MRF553
1N4148
2N4427
2N6255
MRF4427
MRF559
MRF607
MRF5943C
2n5179 chip
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2n2857
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB
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MRF553
2n2857
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bead
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB
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MRF553
bead
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics
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MRF553
MRF553G
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MRF553G
Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics
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MRF553
MRF553G
MRF553G
1N4148 diode
2N5179
mrf544
1N4148
2N4427
2N5109
2N6255
MRF4427
MRF553
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200 watt hf mosfet
Abstract: 100 watt hf mosfet 400 watt hf mosfet MS4300 1N5925A 80 watt hf mosfet
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4300 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:
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MS4300
MS4300
1N5925A
MSC0878
200 watt hf mosfet
100 watt hf mosfet
400 watt hf mosfet
80 watt hf mosfet
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MS4550
Abstract: 200 watt hf mosfet 100 watt hf mosfet C8c3 1N5925A
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4550 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 175 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz CLASS A OR AB DESCRIPTION:
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MS4550
MS4550
1N5925A
MSC0895
200 watt hf mosfet
100 watt hf mosfet
C8c3
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9840 diode
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Module PSMD 75E IFAV VRRM = 75 A = 200-600 V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSMD 75E/02 PSMD 75E/04 PSMD 75E/06 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 ∫ i2 dt
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75E/02
75E/04
75E/06
15nce
9840 diode
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9840 diode
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Module PSND 75E IFAV VRRM = 75 A = 200-600 V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSND 75E/02 PSND 75E/04 PSND 75E/06 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 ∫ i2 dt
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75E/02
75E/04
75E/06
15nce
9840 diode
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PDF
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9840 diode
Abstract: fred module
Text: Fast Recovery Epitaxial Diode FRED Module PSKD 75E IFAV VRRM = 75 A = 200-600 V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSKD 75E/02 PSKD 75E/04 PSKD 75E/06 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 ∫ i2 dt
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75E/02
75E/04
75E/06
15nce
9840 diode
fred module
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TH 382
Abstract: fast diode SOT-227 APT50M50JFLL
Text: APT50M50JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
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APT50M50JFLL
OT-227
TH 382
fast diode SOT-227
APT50M50JFLL
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I2102
Abstract: 20ETS 20ETS08 20ETS12 20ETS16 SMD-220
Text: Previous Datasheet Index Next Data Sheet Bulletin I2102 20ETS. SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS. rectifier series has been optimized for very low forward voltage drop, with moderate
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I2102
20ETS.
CH-8152
I2102
20ETS
20ETS08
20ETS12
20ETS16
SMD-220
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g10 smd transistor
Abstract: SMD marking DK ON smd MARKING dk S 1854 smd diode marking code ax 8150 marking g10 smd code diode 20a SMD MARKING CODE 39 20ETS08S
Text: 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used
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20ETS.
Alu-163
CH-8152
g10 smd transistor
SMD marking DK ON
smd MARKING dk
S 1854
smd diode marking code ax
8150
marking g10
smd code diode 20a
SMD MARKING CODE 39
20ETS08S
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smd diode 708
Abstract: 322 smd code g10 smd transistor smd code diode 20a 20ETS 20ETS08S 20ETS12S 20ETS16S AN-994 SMD-220
Text: Previous Datasheet Index Next Data Sheet 20ETS.S SERIES SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier series has been optimized for very low forward voltage drop, with moderate
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20ETS.
CH-8152
smd diode 708
322 smd code
g10 smd transistor
smd code diode 20a
20ETS
20ETS08S
20ETS12S
20ETS16S
AN-994
SMD-220
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Untitled
Abstract: No abstract text available
Text: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz
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MS4300
MSC0878
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PDF
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200 watt hf mosfet
Abstract: No abstract text available
Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz
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MS4300
MSC0878
200 watt hf mosfet
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PDF
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80 watt hf mosfet
Abstract: 3H DIODE spec 100 watt hf mosfet TRIMMER capacitor
Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz
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MS4300
S4300
MSC0878
80 watt hf mosfet
3H DIODE spec
100 watt hf mosfet
TRIMMER capacitor
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Untitled
Abstract: No abstract text available
Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz
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MS4550
MS4550
MSC0895
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PDF
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Untitled
Abstract: No abstract text available
Text: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz
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MS4550
MSC0895
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PDF
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5 watt hf mosfet
Abstract: No abstract text available
Text: • m m RF Products M ic m m s e m i P rogress Pow ered b y Te ch n olog y 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROW AVE TR AN SISTORS HF/VHF/UHF N -CHAN N EL M OSFETS Featuies 2 -1 7 5 MHz 30 WATTS
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MS4550
MS4550
MSC0895
5 watt hf mosfet
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SP6313US
Abstract: 1N4S35 9842 1N5988B
Text: Zener Regulator Diodes M/crasgn/ - Part Number Microsemi Division Mil Data Power W ' Spec Sheet ID Package Outline Typo B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-213AA DO-213AA DO-35 DO-7 DO-35 DO-7 DO-213AA DO-213AA
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DO-35
DO-213AA
SP6313US
1N4S35
9842
1N5988B
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CH-8152
Abstract: 40EPS 40EPS08 40EPS12 40EPS16 60788 ScansUX33
Text: Bulletin 12104 International [IQRRectifier 40EPS. SERIES INPUT RECTIFIER DIODE I Description/Features T h e 4 0 E P S rectifie r series has been o p tim ize d fo r ve ry low fo rw a rd v o lta g e drop w ith m od e ra te leakage. T he glass passivation te ch no lo g y used
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40EPS
40EPS.
O-247AC
CH-8152
40EPS08
40EPS12
40EPS16
60788
ScansUX33
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PDF
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Untitled
Abstract: No abstract text available
Text: Illl Œ5B1 I n t e r n a t i o n a l R e c tifie r International Rectifier .around-the-world manufacturing to serve worldwide needs. El Segundo, California © • Power MOSFETs, Control Integrated Circuits, government/military hi-rel devices, microelectronic relays
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