BST04
Abstract: P89lpc980 80C51 P89LPC985 TSSOP28
Text: UM10346 P89LPC980/982/983/985 User manual Rev. 3 — 1 July 2010 User manual Document information Info Content Keywords P89LPC980/982/983/985 Abstract Technical information for the P89LPC980/982/983/985 device UM10346 NXP Semiconductors P89LPC980/982/983/985 User manual
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UM10346
P89LPC980/982/983/985
P89LPC980/982/983/985
BST04
P89lpc980
80C51
P89LPC985
TSSOP28
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P89lpc980
Abstract: 80c51 manual 80C51 P89LPC985 TMM-10
Text: P89LPC980/982/983/985 8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB wide-voltage byte-erasable flash with 10-bit ADC Rev. 02 — 8 February 2010 Preliminary data sheet 1. General description The P89LPC980/982/983/985 is a single-chip microcontroller, available in low cost
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P89LPC980/982/983/985
80C51
10-bit
P89LPC980/982/983/985
64-byte
P89LPC980
80c51 manual
P89LPC985
TMM-10
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Untitled
Abstract: No abstract text available
Text: P1ZAA POW-R-BRIK Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Phase Control Dual Diode Module 985 Amperes/Up to 5000 Volts C L (4 PLACES) G (3 PLACES) TAPPED HOLE X .50 DEEP E - (4 PLACES) (FOR TYP. 1/4-20 SOCKET HD. SCR.
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MIL-A-8625,
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S6B0719
Abstract: ic 4560 4560 8 pin adc 809 block diagram pin configuration 985-116 985 transistor 985 transistor details IC 4560 CIRCUIT DIAGRAM COM103 COM82
Text: S6B0719 160 SEG / 105 COM SEG DRIVER & CONTROLLER FOR STN LCD Jan. 2000. Ver. 0.4 Prepared by: Koo-Hyung, Jung Chunggh@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express written
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S6B0719
S6B0719
SEG159
COM51
SEG158
ic 4560
4560 8 pin
adc 809 block diagram pin configuration
985-116
985 transistor
985 transistor details
IC 4560 CIRCUIT DIAGRAM
COM103
COM82
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ic 4560
Abstract: IC 4560 CIRCUIT DIAGRAM S6B0719 4560 8 pin x6 voltage regulator 4560, 8 PINS pin diagram of 4560 ic COM103 COM82 RS 3213
Text: S6B0719 160 SEG / 105 COM DRIVER & CONTROLLER FOR STN LCD Sep. 2002. Ver. 0.8 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose,
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S6B0719
paCOM52
SEG159
SEG158
COM51
SEG158
SEG159
ic 4560
IC 4560 CIRCUIT DIAGRAM
S6B0719
4560 8 pin
x6 voltage regulator
4560, 8 PINS
pin diagram of 4560 ic
COM103
COM82
RS 3213
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Untitled
Abstract: No abstract text available
Text: Type TG Low TC Precision High Voltage Resistors TC of 25 ppm/°C from -55°C to +125°C, Resistance Range from 1 Megohm to 1,000 Megohms To meet the precision temperature stability requirements of high accuracy, high voltage systems, Caddock introduces the Type TG Low TC Precision High Voltage Resistors.
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perfo2004
IL111
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motorola MOSFET 935
Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make
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MRF9002R2/D
MRF9002R2
MRF9002R2
MRF9002R2/D
motorola MOSFET 935
J133 mosfet transistor
transistor 955 MOTOROLA
sps transistor
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J239
Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET
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MRF9002R2/D
MRF9002R2
J239
motorola J122
A113
MRF9002R2
RO4350
mosfet j133
motorola rf Power Transistor
j122 mosfet
J104 MOSFET
J239 mosfet transistor
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J133 mosfet transistor
Abstract: transistor 955 MOTOROLA
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device make
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MRF9002R2/D
MRF9002R2
MRF9002R2
MRF9002R2/D
J133 mosfet transistor
transistor 955 MOTOROLA
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power transistor unit j122
Abstract: MRF9002NR2
Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 7, 7/2005 RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device
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MRF9002NR2
MRF9002NR2
power transistor unit j122
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J133 mosfet transistor
Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF
Text: MRF9002R2 Rev. 5, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array
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MRF9002NT1
MRF9002R2
MRF9002R2
J133 mosfet transistor
ON SEMICONDUCTOR J122
transistor a113
a113 transistor
marking transistor RF
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ON SEMICONDUCTOR J122
Abstract: MRF9002NR2
Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array
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MRF9002NR2
PFP-16
MRF9002R2
MRF9002R2
ON SEMICONDUCTOR J122
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MRF9002NR2
Abstract: A113 RO4350 mosfet j133 j239 J122 MARKING
Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device
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MRF9002NR2
MRF9002NR2
A113
RO4350
mosfet j133
j239
J122 MARKING
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MRF9002NR2
Abstract: RO4350 J104 J158
Text: Document Number: MRF9002NR2 Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device
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MRF9002NR2
PFP-16
MRF9002NR2
RO4350
J104
J158
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MRF9002NR2
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array
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MRF9002R2
MRF9002NR2
PFP-16
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Untitled
Abstract: No abstract text available
Text: UM6700W SERIES 20Watt DC-DC Converter ♦ Synchronous Rectifier Topology ♦ Remote On/Off Control ♦ 4:1 Ultra Wide Input Voltage Range ♦ Efficiency to 88% ♦ Standard 2”x1” Package ♦ Over Temperature Protection ♦ Safety Approval Pending SPECIFICATIONS
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UM6700W
20Watt
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RLT995_5MG
Abstract: No abstract text available
Text: Laser Diode Technical Data RLT995-5MG ABSOLUTE MAXIMUM RATINGS Tc=25 oC DESCRIPTION SYMBOL RATED VALUE Optical Power (mW) Po 5 Operation Temperature (oC) Top -10 to +50 Storage Temperature (oC) Tstg -40 to +85 LD Reverse Voltage (V) VLDR 2 PD Reverse Voltage (V)
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RLT995-5MG
rlt995
RLT995_5MG
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Untitled
Abstract: No abstract text available
Text: FCI Semiconductor Preliminary Data Sheet KBPC10.35XX Series 10 to 35 AMP Single Phase Silicon Bridges_ »» Description FC I Semiconductor •I 350 T o w n s Country Village. 3?n4fl2 00 00 2 7 6 SanJose, CA 95128 TEL 408 985 4571 4T3 ■
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KBPC10.
KBPC10
KBPC15
KBPC25
KBPC35
37n4AS
00002A1
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F0D2741
Abstract: QTC 4N25 QTC 4502 MOC 4N25 F0D2711 GENERAL SEMICONDUCTOR diodes marking code rq diodo detector HCPL-2501 E90700 qtc 6n139
Text: 1655 Scott Blvd Santa Clara, CA 95050-4169 408 985-2400 FAX No. (408) 296-3256 Underwriters Laboratories Inc. File E90700 Issusd Revised Vol 11/17/1998 10/30/2001 FOLLOW-UP SERVICE PROCEDURE (TYPE R) COMPONENT Manufacturer : (621133-001) Applicant : (725625-001)
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E90700
FOD27X2Y
HCPL-05XX
HCPL-04XX
HCPL-07XX
HCPL-06XX
FOD050L
FOD053L
HCPL-0530
HCPL-0531
F0D2741
QTC 4N25
QTC 4502
MOC 4N25
F0D2711
GENERAL SEMICONDUCTOR diodes marking code rq
diodo detector
HCPL-2501
E90700
qtc 6n139
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Untitled
Abstract: No abstract text available
Text: tCe l x c in e Data Sheet M-985-01 Precise Call Progress and Special Information Tone Detector • Precise detection of call progress tones • Linear analog input Voo • Digital (CMOS compatible), tri-state outputs • 22-pin DIP and 20-pin SOIC • Single supply 3 to 5 volt (low power CMOS)
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M-985-01
M00E2
22-pin
20-pin
M-985-01
22121-20th
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ram 4256
Abstract: No abstract text available
Text: TM4256EC4 262,144 BY 4-BIT DYNAMIC RAM MODULE SEPTEMBER 1 985-R E VIS E D MAY 1988 2 6 2 ,1 4 4 T M 4256 E C 4 . . . C SINGLE-IN-LINE PACKAGE x 4 Organization Dynamic RAM Modules TOP VIEW Single 5-V Supply 110% Tolerance) 22-Pin Single-In-line Package (SIP)
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TM4256EC4
985-R
22-Pin
77CC1
ram 4256
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HJR 1-2C
Abstract: SMJ4416 pin diagram for all 74 series ttl gates ao 4416 TMS4416-15 texas 74 series logic gates texas 74 series TTL logic gates TMS4416 ic ttl 74 Texas Instruments TTL data book 1985
Text: • TM4416FE8 32,768 BY 8 BIT DYNAMIC RAM MODULE MOS LSI JANUARY 1>985- X 3 2 ,7 6 8 _X~8~Organization 24-PIN SINGLE-IN-LINE PACKAGE TOP VIEW Single + 5 - V Supply (1 0 % Tolerance) 24-Pin S in g le ii-L in e Package (SIP) V DD (1) Utilizes Four 16K X 4 Dynam ic RA M s in
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TM4416FE8
24-Pin
TMS4416-12
TMS4416-1
TMS4416-20
TM4416F5012
TMS4416,
SMJ4416
HJR 1-2C
SMJ4416
pin diagram for all 74 series ttl gates
ao 4416
TMS4416-15
texas 74 series logic gates
texas 74 series TTL logic gates
TMS4416
ic ttl 74
Texas Instruments TTL data book 1985
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UM3882F
Abstract: UM3882 UM3881B
Text: I V UMC I C D UM3882 Dot Matrix LCD 40-Channel Driver Features • Provides 40-channel LCD driver ■ Internal serial to parallel conversion circuits: 20-bit shift register x 2 40-bit latch x 1 40-bit 4-level driver x 1 ■ Logic circuit supply voltage:4.5 to 5.5 volts
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40-channel
20-bit
40-bit
UM3882
UM3881B
UM3882
UM3882F
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Untitled
Abstract: No abstract text available
Text: 4.0 Mechanical/Electrical Specifications Table 4-1 and Figure 4-1 illustrate the timing requirements for the microprocessor interface. The parameter tcyc is the period of the receive DS3/E3 clock DS3CKI . This clock signal is used in the read circuit of the microprocessor to ensure that
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Bt8330
80-Pin
N8330DSC
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