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    98ASA99191D Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1


    Original     		MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1. PCN12895 MRF6S9060NBR1 MRF6S9060NR1 MRF6S9060NBR1 PDF

    Resistor mttf

    Abstract: MRF6S9060NBR1 MRF6S9060NR1 MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION


    Original     		MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1. PCN12895 MRF6S9060NBR1 MRF6S9060NBR1 Resistor mttf MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N PDF

    MRF9030N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts


    Original     		MRF9030N MRF9030NBR1 MRF9030N PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB


    Original     		MRF9045N MRF9045NBR1 PDF

    MRFE6S9045NR1

    Abstract: ATC 221 Chemi-Con DATE CODES Nippon Chemi-Con LABEL A114 A115 C101 JESD22 MRF6S9045N MRF6S9045NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 4, 8/2008 MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION


    Original     		MRF6S9045N MRF6S9045NR1 MRFE6S9045NR1. PCN12895 MRF6S9045NBR1 MRF6S9045NBR1 MRFE6S9045NR1 ATC 221 Chemi-Con DATE CODES Nippon Chemi-Con LABEL A114 A115 C101 JESD22 MRF6S9045N PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 4, 8/2008 MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9045NR1


    Original     		MRF6S9045N MRF6S9045NR1 MRFE6S9045NR1. PCN12895 MRF6S9045NBR1 MRF6S9045NR1 MRF6S9045NBR1 PDF

    B10T

    Abstract: multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 4, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 B10T multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22 PDF

    ATC100B910

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 ATC100B910 PDF

    250GX-0300-55-22

    Abstract: ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 250GX-0300-55-22 ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1 PDF

    MRFE6S9045

    Abstract: PCN12 A114 A115 C101 JESD22 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 MRFE6S9045NR1
    Text: Freescale Semiconductor Technical Data MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9045NR1 MRF6S9045NBR1 N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		MRF6S9045NR1 MRFE6S9045NR1. PCN12895 MRF6S9045NBR1 MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045N MRFE6S9045 PCN12 A114 A115 C101 JESD22 MRF6S9045N MRFE6S9045NR1 PDF

    MRF6S9060NBR1

    Abstract: C1547 A114 A115 C101 JESD22 MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1 ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 RF Power Field Effect Transistors MRF6S9060NR1 MRF6S9060NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original     		MRF6S9060N MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060NR1 MRF6S9060NBR1 C1547 A114 A115 C101 JESD22 MRF6S9060N MRFE6S9060NR1 ATC-100B-3R0 PDF

    TO272

    Abstract: No abstract text available
    Text: F R E E S C A L E SEMICONDUCTOR, ALL R I GH TS RESERVED. TITLE: INC. TO— 272 2 LEAD MECHANICAL OUTLINE PRINT VERSION NOT TO SCALE DOCUMENT NO: 98ASA99191D REV: E CASE NUMBER: 1337-04 10 SEP 2007 STANDARD: JEDEC TO-272 BC VIEW Y - Y © F R E E S C A L E SEMICONDUCTOR,


    OCR Scan     		98ASA99191D O-272 5M-1994. TO272 PDF