ATC200B103KT50X
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace
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MRFE6VP61K25H
MRFE6VP61K25HR6
MRFE6VP61K25HR5
MRFE6VP61K25HR6
MRFE6VP61K25HR5
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
ATC200B103KT50X
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NI-1230-4H
Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8P8300H
MRF8P8300HR6
MRF8P8300HSR6
NI-1230-4H
ATC100B2R1BT500XT
NI-1230-4S
MRF8P8300HS
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TDK Ferrite Balun
Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace
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Original
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PDF
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MRFE6VP61K25H
MRFE6VP61K25HR6
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
TDK Ferrite Balun
FM LDMOS freescale transistor
NI-1230-4H
1812sms-39njlc
awg 4 high temperature wire resistance calculator
NI-1230-4S
mrfe6vp61k2
PCN15551
MRFE6VP
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Untitled
Abstract: No abstract text available
Text: F R E E S C A L E SEMICONDUCTOR, INC. ALL RIGHTS RESERVED. TITLE: Nl — 1230 MECHANICAL OUTLINE PRINT VERSION NOT TO SCALE DOCUMENT NO: 98ASB16977C REV: E CASE NUMBER: 3 7 5 D -0 5 31 MAR 2005 STANDARD: NON-JEDEC NOTES: 1.0 INTERPRET DIMENSIONS AND TOLERANCES
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OCR Scan
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98ASB16977C
375D-05
5M-1994.
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