WORKING PRINCIPLE OF TEMPERATURE SENSOR LM35
Abstract: LM1205N PRINCIPLE OF TEMPERATURE SENSOR LM35 intelligent ambulance car controls the traffic light LM335 spice model LM2596 schematic constant current circuit diagram of crt monitor yoke coil F100K ECL Users Handbook BLOCK SCHEMATIC OF LM335 LM2406T
Text: National Semiconductor European Analog Seminar - 1997 Application Notes ELECTRO-MAGNETIC COMPATIBILITY AN-988 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 AN-990 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
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AN-988
AN-990
AN-1013
AN-1050
LM131
LM131
WORKING PRINCIPLE OF TEMPERATURE SENSOR LM35
LM1205N
PRINCIPLE OF TEMPERATURE SENSOR LM35
intelligent ambulance car controls the traffic light
LM335 spice model
LM2596 schematic constant current
circuit diagram of crt monitor yoke coil
F100K ECL Users Handbook
BLOCK SCHEMATIC OF LM335
LM2406T
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EBC 40 capacitor
Abstract: PLL 2400 MHZ
Text: PBM 990 80 Bluetooth Baseband Controller with Integrated Flash Key features • Integrated Flash • Suited for embedded applications • Efficient interfaces. USB, UARTs, GPIOs, etc. • Point to multipoint, 7 slaves • Flexible input clock interface
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SE-164
EBC 40 capacitor
PLL 2400 MHZ
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Untitled
Abstract: No abstract text available
Text: Frequency Mixer LMX-1481 Typical Performance Curves Conversion Loss Conversion Loss dB 9.0 8.7 LO = +7dBm 8.4 LO = +10dBm 8.1 LO = +13dBm 7.8 7.5 7.2 6.9 6.6 6.3 6.0 110 220 330 440 550 660 770 880 990 1100 RF Frequency (MHz) LO-IF Isolation LO-RF Isolation
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LMX-1481
10dBm
13dBm
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bd 36 930
Abstract: No abstract text available
Text: Integra Part Number: IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT IB0810M210 is designed for L-Band radar systems operating over the instantaneous band width of 870-990 MHz. While operating in class C mode this common base device supplies a
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IB0810M210
IB0810M210
IB0810M210-REV-NC-DS-REV-B
bd 36 930
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tegra 2
Abstract: IB0810M210 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255
Text: Part Number: Integra IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M210 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C
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IB0810M210
IB0810M210
IB0810M210-REV-NC-DS-REV-A
tegra 2
tegra
BD 9280
CI 321
sar radar
INTEGRA TECHNOLOGIES
transistor BD 255
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IB0810M12
Abstract: transistor Common Base configuration IB0810M12-REV-NC-DS-REV-NC method d 1071 transistor BD 325 bd 142 transistor 4620 Common collector configuration BD 54 transistor IB0810M
Text: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C
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IB0810M12
IB0810M12
IB0810M12-REV-NC-DS-REV-NC
transistor Common Base configuration
IB0810M12-REV-NC-DS-REV-NC
method d 1071
transistor BD 325
bd 142 transistor
4620
Common collector configuration
BD 54 transistor
IB0810M
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amd 990
Abstract: ARM7 pin configuration PBA31305 16C550 bluetooth based data transfer system block diagram lock system using bluetooth PBA31301 uart 16c550 obd3 Bluetooth Module Ericsson
Text: PBM 990 90 Bluetooth Baseband Controller Key Features • Variable input clock frequency • Two 16C550 UART interfaces • Up to 10 bits general purpose IO • I2C interface • USB 2.0 Full-speed compliant interface • JTAG Debug & Test interface • Capability for embedded solutions
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16C550
SE-164
amd 990
ARM7 pin configuration
PBA31305
bluetooth based data transfer system block diagram
lock system using bluetooth
PBA31301
uart 16c550
obd3
Bluetooth Module Ericsson
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IB0810M100
Abstract: l-band 60 watt transistor x band radar U 855 D nc50
Text: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,
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IB0810M100
IB0810M100
IB0810M100-REV-NC-DS-REV-NC
l-band 60 watt transistor
x band radar
U 855 D
nc50
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,
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IB0810M100
IB0810M100
IB0810M100-REV-NC-DS-REV-A
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HB52RD168DB-A6D
Abstract: Hitachi DSA00164 Nippon capacitors
Text: HB52RD168DB-D 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components PC100 SDRAM ADE-203-990 (Z) Preliminary, Rev. 0.0 Dec. 16, 1998 Description The HB52RD168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line
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HB52RD168DB-D
16-Mword
64-bit,
PC100
ADE-203-990
HB52RD168DB
64-Mbit
HM5264405DTB)
144-pin
HB52RD168DB-A6D
Hitachi DSA00164
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: 5MM PCB Mountable Fuse Clip Receptacles 0.216 * 5.49 0.140 (3.56) i 0.216 (5.49) ? Detail Part Number Fuse Size Fuse Receptacle Type Material Thickness M ounting Hole Diameter A 990 5mm Standard w/Fuse Stop 0 .0 l6 "(0 .4 lm m ) 0.052"(1.32M M ) 1/4” (6.35mm) PCB Mountable Fuse Clip Receptacles
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} "H 990 16854 9097250 TOSHIBA <DISCRETE/OPTO> ^ashiht SEMICONDUCTOR D E I •=!DT 72 SD OGlbflS4 D f D T ^ S - cR TOSHIBA FIELD EFFECT TRANSISTOR Y T F 6 l'l SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SE INDUSTRIAL APPLICATIONS
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500nA
250uA
250us|
00A/us
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4117 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Unit in mm • Excellent h p E Linearity h F E (0.1mA)/hF E (2mA)=0.95(Typ.) • Low Noise: 200-700 990 • High hF E : Ö +T ! 2 ! 1 i ._
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2SC4117
2SA1587
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TLR333
Abstract: TIC33 TLG-333 TLR-335 TLG-334 TLG-332
Text: .TT deTJ t c h t e s o 9097250 TOSHIBA DISCRETE/OPTO oGiTsaa a 990 1722S OT-MVS TLG332, TLG333, TLG334, TLG335 • Green Color, 7.6 « • Applications: (0.3") Character Height Nuaerical and with Polarity Display. Transceiver or TV Channel Display, and Instrmeot Display etc.
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1722S
TLG332,
TLG333,
TLG334,
TLG335
TLG332
TLG333
TLG334
TLR333
TIC33
TLG-333
TLR-335
TLG-334
TLG-332
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOJ- TT 9097250 TOSHIBA DISCRETE/OPTO DE | l [ H 7 E S G GDlbflbD 990 16860 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR i T F.6 2 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI) INDUSTRIAL APPLICATIONS Unit in nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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500nA
250uA
250uA
00A/us
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} Tí D eT I t D ^ S G 990 16850 9097250 TOSHIBA DISCRETE/OPTO ^/oihlha üDlbñSG 3 D 1-39-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSIT) INDUSTRIAL APPLICATIONS Unit in mm
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500nA
250uA
250uA
00A/us
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Untitled
Abstract: No abstract text available
Text: dF TOSHIBA {DISCRETE/OPTÔJ 9097250 TOSHIBA ¿Tasiììht D I S C R E TE/OPTO ^ Q ^ S O 990 GGltflTH 16872 DTP-Sq-l TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 6 3 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI) INDUSTRIAL APPLICATIONS Unit in mm
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500nA
250uA
250uA
00A/ys
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOJ Ti □ □ 1 7 4 Sa 9097250 TOSHIBA s DISCRETE/OPTO 990 17452 D T-Hi-n TLP543J, TLP545J GaAs IR E D & P H O T O - T H Y R I STOR Unit in ma The TOSHIBA TLP543J consists of a photthyristor optically coupled to a gallium
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TLP543J,
TLP545J
TLP543J
TLP545J
150mA
2500Vrms
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DIS CR ETE/O PT O} TT 9097250 TOSHIBA CDISCRETE/OPTO ¿Tashihi d F I t d t TSSO 990 16647 D O l b ^ ? DT-S^-ß TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE 7T— M O S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS
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0-12fKTyp.
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE /OPT O! TT 9097250 TOSHIBA DISCRETE/OPTO tfashìlu SEMICONDUCTOR D ^ I t DTTSSO 0Dlt71G 990 16710 DT-3<=l-V| TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 5 3 7 SILICON N CHANNEL MOS TYPE TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH: VOLTAGE SWITCHING APPLICATIONS.
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0Dlt71G
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Untitled
Abstract: No abstract text available
Text: TOSHIBA O I S C R E T E / O P T O J D e J i DTTESO 001ti71G 9097250 TOSHIBA DISCRETE/OPTO ¿ /o ó h ìh i 990 16710 DT-S^-VI SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 2 S K 5 3 7 INDUSTRIAL APPLICATIONS Unit in mm
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001b71D
100nA
10/isec
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Untitled
Abstract: No abstract text available
Text: HB52RD168DB-D 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M x 4 components PC100 SDRAM HITACHI ADE-203-990 (Z) Preliminary, Rev. 0.0 Dec. 16, 1998 Description The HB52RD168DB is a 16M x 64 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line
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HB52RD168DB-D
16-Mword
64-bit,
PC100
ADE-203-990
HB52RD168DB
64-Mbit
HM5264405DTB)
144-pin
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PDF
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cdi dc/dc
Abstract: 2SK355 Vtih-20V
Text: TOSHIBA OISCRETE/OPTO} 9097250 TOSHIBA ~Ti 990 CDI S C R E T E / O P T O 16647 DOlbbM? b 1 ~ DT-3^-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR ¿^ùshìht D eT | B O T O S O 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE < 7l~MO S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS
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ITCH725D
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ^aHììln CDI S C R E T E / O P T O “H DeTJ B O T O S O 990 16647 D 0 1 L t 47 b DT-3Ì-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE <7T-MOS ) TECHNICAL DATA INDUSTRIAL APPLICATIONS
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71-MOS
100nA
ITCH725D
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