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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SK3335 N- Channel Silicon MOS FET Very High-Speed Switching TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current (Pulse)	Original	PDF	2SK3335 990126TM2fXHD

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: 2SK3335 N- Channel Silicon MOS FET Very High-Speed Switching TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current (Pulse)

Original

PDF

2SK3335 990126TM2fXHD