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    D1014

    Abstract: No abstract text available
    Text: FTD1014 P- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC


    Original     		PDF FTD1014 --10V, FTD1011 990916TM2fXHD D1014

    Untitled

    Abstract: No abstract text available
    Text: FTD1011 P- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC


    Original     		PDF FTD1011 --10V, 990916TM2fXHD