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    FET MARKING QG

    Abstract: FSS203 S203 marking S203 S20-3
    Text: FSS203 N- Channel Silicon MOS FET TENTATIVE Features and Applications • Low ON-state resistance. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage 20 VDSS Gate to Source Voltage ±10 VGSS Drain Current DC 8 ID Drain Current(Pulse)


    Original     		FSS203 1200mm2 991221TM2fXHD FET MARKING QG FSS203 S203 marking S203 S20-3 PDF

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    Abstract: No abstract text available
    Text: FW233 N- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 4V drive. unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse) Allowable power Dissipation VDSS VGSS


    Original     		FW233 991221TM2fXHD PDF