9997gp
Abstract: No abstract text available
Text: 9997GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 100V RDS ON 120mΩ ID G 11A S Description Advanced Power MOSFETs from APEC provide the designer with
|
Original
|
PDF
|
AP9997GP
O-220
O-220
9997GP
9997gp
|
9997gp
Abstract: AP9997GP AP9997 b1l3
Text: 9997GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 100V RDS ON 120mΩ ID G 11A S Description Advanced Power MOSFETs from APEC provide the
|
Original
|
PDF
|
AP9997GP
O-220
O-220
9997GP
9997gp
AP9997GP
AP9997
b1l3
|
Untitled
Abstract: No abstract text available
Text: 9997GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower Gate Charge Fast Switching Characteristic ID G 100V 120m 11A S Description Advanced Power MOSFETs from APEC provide the
|
Original
|
PDF
|
AP9997GP
O-220
O-220
9997GP
|
Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. 9997GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Low Gate Charge 100V RDS ON Fast Switching Performance G ID RoHS-compliant, halogen-free 120mΩ 11A S Description Advanced Power MOSFETs from APEC provide the designer with the best
|
Original
|
PDF
|
AP9997GP-HF-3
AP9997GP-HF-3
O-220
O-220
AP9997
9997GP
|