Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOï 9Q97250 TOSHIBA ~5b Ï>e | TCHTHSO 0007fiñl H 0TÖ8L ' 56C DISCRETE/OPTO r o y T-33-35 SILICON NPN TRIPLE DIFFUSED MESA TYPE _ (DARLINGTON POWER)_ 2SD1166 Unit in ram HIGH POWER SWITCHING APPLICATION AC & DC MOTOR CONTROL APPLICATION
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9Q97250
0007fiÃ
T-33-35
2SD1166
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2SD683A
Abstract: 2SD683 AC73 200X300
Text: TOSHIBA {DISCRETE/OPTO} 9Q97250 TOSHIBA T b DE I " 5 CDI S C R E T E / O P T O SOTTESO 0 CI[]7 7 S a ^ 2SD683 2SD683A, SILICON NPN TRIPLE DIFFUSED TYPE _ DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS Unit in mm HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS.
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T-33-29
2SD683
2SD683A.
2SD683A)
2SD683
2SD683A
TQT75S0
Q77SS
U7752
2SD683A
AC73
200X300
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TSZ2J43S
Abstract: ci 4565 TSZ2D43S TSZ2G43S TSZ2H43S
Text: 9Q97250 TOSHIBA <D IS C R E T E /O P T O 39C SSR N O N -ZER O -C R O SS TY P E ) TOSHIBA DE - t DI SC R ET E / O P T O l T SZ 2J43S I 02382 D TDTTESO 0005302 3 U nit tn mm 600V 2A ' ¿<p2.0 i #4 TERMINAL MARK> M A X IM U M R A T IN G S 3 D. o C H A R A C T E R IS T IC
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9Q97250
TSZ2J43S
TSZ2D43S
TSZ2G43S
TSZ2H43S
100fl
TSZ2J43S
ci 4565
TSZ2D43S
TSZ2G43S
TSZ2H43S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA l - b? {DISCRETE/OPTO} dFI^CHTESO 9Q97250 TOSHIBA DISCRETE/OPTO - ; - - 0QCH2ÖL, 1 |~ 67C 09266 -Silicon Epitaxial Planar Type _ Diode D7*03 »0^ 1 N91 6,1 N91 6A, 1N916B TENTATIVE Unit In nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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9Q97250
1N916B
1N916
1N916A
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1N916B
Abstract: diode 1N916b 1N916 1N916A toshiba diode do-35 CT2PF
Text: TO SHIBA ~b? {DISCRETE/O PTO} 9Q97250 TOSHIBA 67C DISCRETE/OPTO * _ dFI^CHTESO J - -Silicon Epitaxial Planar Type Diode 0QCH2ÖL, 1 |~ 09286 D T -0 3 1N91 6,1 N91 6A, 1N916B TENTATIVE Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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092B6
1N916B
1N916
1N916A
1N916B
100il,
diode 1N916b
toshiba diode do-35
CT2PF
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