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    9B3 DIODE Search Results

    9B3 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    9B3 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    oz960

    Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
    Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO


    Original     		MPC7450 oz960 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763 PDF

    OZ960

    Abstract: 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode
    Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B A DESCRIPTION OF CHANGE 279015 ENGINEERING RELEASED


    Original     		MPC7450 OZ960 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode PDF

    523a6

    Abstract: 10B1 10B2 10B3 11B1 11B3 IDTQS316214 QS316214 9b3 diode 12b3 diode
    Text: IDTQS316214 HIGH-SPEED CMOS 12-BIT 3-TO-1 BUS-SELECT SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 12-BIT 3-TO-1 BUS-SELECT SWITCH FEATURES: • • • • • • IDTQS316214 DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc


    Original     		IDTQS316214 12-BIT QS316214 523a6 10B1 10B2 10B3 11B1 11B3 IDTQS316214 9b3 diode 12b3 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 352GB128D Absolute Maximum Ratings Symbol Conditions IGBT  /  ', - 2 /  1, - 267   ',-.     !  % 1'(  34, $   5( - '4( $ 9( $ ;'(  1( @   ', - 'B, $   5( - '(, $ 9( $ '( $ <( $ 9( CCC D 1,(


    Original     		352GB128D PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 352GB128D Absolute Maximum Ratings Symbol Conditions IGBT  /  ', - 2 /  1, - 267   ',-.     !  % 1'(  34, $   5( - '4( $ 9( $ ;'(  1( @   ', - 'B, $   5( - '(, $ 9( $ '( $ <( $ 9( CCC D 1,(


    Original     		352GB128D PDF

    DIODE 10B3

    Abstract: 12b3 diode 11b3 DIODE 10B3 11B3 diode 6b3 10B1 QS316214 QS3162214 1A12A
    Text: QS316214, QS3162214 ADVANCE INFORMATION QuickSwitch Products High-Speed CMOS 12-Bit 3-to-1 Bus-Select Switch Q QUALITY SEMICONDUCTOR, INC. QS316214 QS3162214 ADVANCE INFORMATION FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC


    Original     		QS316214, QS3162214 12-Bit QS316214 QS3162214 56-pin QS316214 DIODE 10B3 12b3 diode 11b3 DIODE 10B3 11B3 diode 6b3 10B1 1A12A PDF

    12b3 diode

    Abstract: No abstract text available
    Text: PI5C16214 Ω PI5C162214 25Ω


    Original     		PI5C16214 PI5C162214 12-Bit, 56-pin 240-mil 300-mil PS7040A 12b3 diode PDF

    54B2

    Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		RC410MD SB450 BA41-00615A RC410MD Sheet18. Sheet19. Sheet20 TP682 TP685 TP686 54B2 HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504 PDF

    XC503

    Abstract: schematic diagram tv samsung AR5212 XC502 C568 ar5312 ZD5022 CT502 7S06 SOT23 d526 y
    Text: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X30 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 42(Operation Block Diagram)


    Original     		DiagraA-062 A17-01-B-002 A02-02-A-001 A04-01-A-047 A09-01-A-089 LTST-C150GKT, SLS-PGYE301-TM, OT-25) 12513WR-04A0, CIM10J121NES XC503 schematic diagram tv samsung AR5212 XC502 C568 ar5312 ZD5022 CT502 7S06 SOT23 d526 y PDF

    Untitled

    Abstract: No abstract text available
    Text: PI5C16214 PI5C162214 25ohm


    Original     		PI5C16214 PI5C162214 25ohm) 12-Bit, 56-pin 240-mil 300-mil PS7040A PDF

    DIODE 22B4

    Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
    Text: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams


    Original     		BA92-01774A BA41-# 400MHZ 512MBYTE 66MHZ MAP31 68ohm 3000mA 012ohm DIODE 22B4 BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4 PDF

    11b3 DIODE

    Abstract: 12b3 diode 11B3 16214 10A1 10B1 10B2 10B3 11A1 12A1
    Text: PI5C16214 Ω PI5C162214 25Ω


    Original     		PI5C16214 PI5C162214 12-Bit, 56-pin 240-mil 300-mil PS7040A 11b3 DIODE 12b3 diode 11B3 16214 10A1 10B1 10B2 10B3 11A1 12A1 PDF

    Si475x

    Abstract: SFM-130--02-S-D-A
    Text: Si 4 7 7 x - EVB S i477 X E VALUATION B OAR D U SER ’ S G UIDE Description Features The Si477x EVB is a platform designed to simplify evaluation and development with the Silicon Laboratories Si477x series tuners. The platform includes both hardware and software tools to easily


    Original     		Si477x Si475x SFM-130--02-S-D-A PDF

    diode 6b3

    Abstract: S2-1B3
    Text: IDT74FST163214 12-BIT 3:1 MUX/DEMUX SWITCH INDUSTRIAL TEMPERATURE RANGE 12-BIT 3:1 MUX/DEMUX SWITCH FEATURES: IDT74FST163214 DESCRIPTION: • • • • Bus switches provide zero delay paths Ω Low switch on-resistance; 4Ω TTL-compatible input and output levels


    Original     		IDT74FST163214 12-BIT MIL-STD-883, 200pF, FST163214 diode 6b3 S2-1B3 PDF

    6B5 diode

    Abstract: 5B2 rectifier 5D6 diode 06032R104K7B20D diode 10A6 6B5 SOT23 UB04 rj48 to db9 b v3.3 DS26521DK
    Text: DS26521DK Single T1/E1/J1 Transceiver Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26521DK is an easy-to-use evaluation kit for the DS26521 T1/E1/J1 single-chip transceiver SCT . The DS26521DK is intended to be used as a standalone system. The board comes complete with a


    Original     		DS26521DK DS26521DK DS26521 RS-232 AT25160A MAX1963 DS26521DK02A0 ds26521topdn 6B5 diode 5B2 rectifier 5D6 diode 06032R104K7B20D diode 10A6 6B5 SOT23 UB04 rj48 to db9 b v3.3 PDF

    R7411 2A

    Abstract: PP3V42G3H FERR-220-OHM-2A C5301 C5302 2N7002DW-X-F R7411 macbook macbook pro 13 U5100
    Text: 8 6 7 5 2 3 4 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? DATE ? SCHEM,LIO/AUDIO ,MacBook Pro 15"


    Original     		U8300 U8301 U8405 U8415 U8450 XW6800 XW7200 XW7300 XW7301 XW7310 R7411 2A PP3V42G3H FERR-220-OHM-2A C5301 C5302 2N7002DW-X-F R7411 macbook macbook pro 13 U5100 PDF

    ICS951461

    Abstract: CQ533 218s6ecla21fg R5538 by503 TP2205 TP2136 b536 AF45 DIODE SMD SS338A
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


    Original     		RS600M SB600 BA41-XXXXXA RS600 REV500 TP2123 TP2124 TP2125 ICS951461 CQ533 218s6ecla21fg R5538 by503 TP2205 TP2136 b536 AF45 DIODE SMD SS338A PDF

    39B4

    Abstract: ar5312 CT450 TP880 A0744 Q506 J955 2007-000162 AR5212 C699
    Text: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X15 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)


    Original     		A04-44-A-060 A04-44-A-061 A09-01-A-085 KX15-50KLDL KX14-50K2-58E-1 39B4 ar5312 CT450 TP880 A0744 Q506 J955 2007-000162 AR5212 C699 PDF

    SS338A

    Abstract: Diode smd BD27 BD2430 cq521 18b2 diode BE513 3b506 HAINAN2 TP2041 B538
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


    Original     		RS600M SB600 BA41-XXXXXA RS600 REV500 TP2165 TP2123 TP2124 SS338A Diode smd BD27 BD2430 cq521 18b2 diode BE513 3b506 HAINAN2 TP2041 B538 PDF

    TL5941

    Abstract: TL594 application TL594 TL495 data ic tl594 593C TL593 TL595 tl494 applications TL493
    Text: TYPES TL593, TL594, TL595 PULSE-WIDTH-MODULATION CONTROL CIRCUITS LINEAR INTEGRATED CIRCUITS D 2712, APRIL 1 9 8 3 -R E V IS E D DECEMBER 1 9B3 TL593M . . . J TL593C . . . N Complete PWM Power Control Circuitry Uncommitted Outputs for 200-m A Sink or Source Current


    OCR Scan     		TL593, TL594, TL595 D2712, 1983-REVISEO 200-mA TL593 TL595 TL5941 TL594 application TL594 TL495 data ic tl594 593C tl494 applications TL493 PDF

    136b3

    Abstract: B2321
    Text: f u PERICOM AADVANCE D V A N C E INFORMATION 1NJ V PI5C16214 PI5C162214 2 5 0 i mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi il mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi mi i 3-to-l Bus-Select Switch Product Features:


    OCR Scan     		PI5C16214 PI5C162214 PI5C162214 12-bit 136b3 B2321 PDF

    Untitled

    Abstract: No abstract text available
    Text: QS 316214 Q u ic k S w itc h P r o d u c ts High-Speed CMOS qs 3162214 ADVANCE INFORMATION 1 9 R i t T tn 1 Q u a lit y S e m ico n d u c to r, In c I £ - d iio - iu - i Bus-Select Switch FEATURES/BENEFITS DESCRIPTION • The QS316214 provides a set ot twelve high-speed


    OCR Scan     		56-pin QS3162214 QS316214 QS316221 MDSL-00142-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: QuickSwitch Products QS316214 High-Speed CMOS QS3162214 Qu a lity ADVANCE INFORMATION i t p i t a iu S e m ic o n d u c t o r , I n c . pus-Select Switch FEATURES/BENEFITS DESCRIPTION • The Q S 31 6214 provides a set of tw elve high-speed C M O S T T L-com p atib le buses sw itching betw een


    OCR Scan     		QS316214 QS3162214 12-bit MO-118AB PSS-48B PSS-56B PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT74FST163214 ADVANCE INFORMATION 12-BIT 3:1 MUX/DEMUX SWITCH Integrated Device Technology, Inc. The FST163214 belong to IDT's family of Bus switches. Bus switch devices perform the function of connecting or isolating two ports without providing any inherent current sink


    OCR Scan     		IDT74FST163214 12-BIT FST163214 there3214 S056-1) S056-2) S056-3) PDF