Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    9Y MARKING NPN Search Results

    9Y MARKING NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    9Y MARKING NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    XN6543

    Abstract: 2SC3904 9y marking NPN
    Text: Composite Transistors XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification 2GHz band 2.8 –0.3 +0.25 1.5 –0.05 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of


    Original     		XN6543 2SC3904 XN6543 2SC3904 9y marking NPN PDF

    9y transistor

    Abstract: No abstract text available
    Text: Composite Transistors XP06543 Silicon NPN epitaxial planar transistor 6 Unit: mm 0.425 For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is separated)


    Original     		XP06543 2SC3904 65nteed 9y transistor PDF

    2SC3904

    Abstract: XP06543
    Text: Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm 0.425 For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is separated)


    Original     		XP06543 2SC3904 2SC3904 XP06543 PDF

    9y transistor

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is


    Original     		2002/95/EC) XP06543 2SC3904 9y transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is


    Original     		2002/95/EC) XP06543 2SC3904 PDF

    2SC3904

    Abstract: XP06543
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		2002/95/EC) XP06543 2SC3904 XP06543 PDF

    2SC3904

    Abstract: XN06543 XN6543
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half


    Original     		2002/95/EC) XN06543 XN6543) 2SC3904 XN06543 XN6543 PDF

    2SC3904

    Abstract: XN06543 XN6543
    Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10


    Original     		XN06543 XN6543) 2SC3904 XN06543 XN6543 PDF

    9y transistor

    Abstract: 2SC3904 XP06543
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 5 0.12+0.05 –0.02 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 1 5˚ ue pl d in


    Original     		2002/95/EC) XP06543 9y transistor 2SC3904 XP06543 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half


    Original     		2002/95/EC) XN06543 XN6543) 2SC3904 PDF

    9y marking

    Abstract: 2SC3904 XN06543 XN6543
    Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification (2GHz band) 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage


    Original     		XN06543 XN6543) 2SC3904 9y marking 2SC3904 XN06543 XN6543 PDF

    9y marking

    Abstract: 2SC3904 XN06543 XN6543
    Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SC3904 x 2 elements ■ Absolute Maximum Ratings 0 to 0.1 ● (Ta=25˚C) Parameter


    Original     		XN06543 XN6543) 2SC3904 9y marking 2SC3904 XN06543 XN6543 PDF

    2SC3904

    Abstract: XN06543 XN6543
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05


    Original     		2002/95/EC) XN06543 XN6543) 2SC3904 XN06543 XN6543 PDF

    2SC3904

    Abstract: XP06543
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		2002/95/EC) XP06543 2SC3904 XP06543 PDF

    2SC3904

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-noise amplification (2 GHz band) • Features ■ Package • Code Mini6-G3 • Pin Name


    Original     		2002/95/EC) XN06543G 2SC3904 PDF

    2SC3904

    Abstract: XN06543 XN6543
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05


    Original     		2002/95/EC) XN06543 XN6543) 2SC3904 XN06543 XN6543 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des


    Original     		2002/95/EC) XN06543 XN6543) PDF

    2SC3904

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543G Silicon NPN epitaxial planar type For low-noise amplification (2 GHz band) • Features ■ Package • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo


    Original     		2002/95/EC) XN06543G 2SC3904 PDF

    QFN6

    Abstract: MPS Tsot23 top VIEW marking 121 inductor
    Text: MP2489 Step Down White LED Driver with Wide 6V–60V Input Voltage The Future of Analog IC Technology DESCRIPTION FEATURES The MP2489 is a high efficiency step-down converter designed in continuous current mode for driving the high brightness Light Emitting


    Original     		MP2489 MP2489 202mV with17/2012 QFN6 MPS Tsot23 top VIEW marking 121 inductor PDF

    MPS Tsot23 top VIEW marking

    Abstract: No abstract text available
    Text: MP2489 Step Down White LED Driver with Wide 6V–60V Input Voltage The Future of Analog IC Technology DESCRIPTION FEATURES The MP2489 is a high efficiency step-down converter designed in continuous current mode for driving the high brightness Light Emitting


    Original     		MP2489 MP2489 202mV with9/4/2012 MPS Tsot23 top VIEW marking PDF

    MP2489

    Abstract: MP2489DN MP2489DJ QFN6 DIODE MARKING 9Y mp24 SOIC8E MPS Tsot23 top VIEW marking
    Text: MP2489 Step Down White LED Driver with Wide 6V–60V Input Voltage The Future of Analog IC Technology DESCRIPTION FEATURES The MP2489 is a high efficiency step-down converter designed in continuous current mode for driving the high brightness Light Emitting


    Original     		MP2489 MP2489 202mV MP2489DN MP2489DJ QFN6 DIODE MARKING 9Y mp24 SOIC8E MPS Tsot23 top VIEW marking PDF

    MP2489

    Abstract: WLED driver 3mm QUALITY LED MPS Tsot23 top VIEW marking
    Text: MP2489 Step Down White LED Driver with Wide 6V–60V Input Voltage The Future of Analog IC Technology DESCRIPTION FEATURES The MP2489 is a high efficiency step-down converter designed in continuous current mode for driving the high brightness Light Emitting


    Original     		MP2489 MP2489 202mV MS-012, WLED driver 3mm QUALITY LED MPS Tsot23 top VIEW marking PDF

    XP6543

    Abstract: 25CT5A 9y transistor
    Text: Composite Transistors Panasonic XP6543 Silicon NPN epitaxial planer transistor Unit: mm For low frequency amplification • Features • • High transition frequency fT. Two elements incorporated into one package. ■ Basic Part Number of Element • 2SC3904 x 2 elements


    OCR Scan     		XP6543 2SC3904 XP6543 25CT5A 9y transistor PDF

    gn2011

    Abstract: XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT
    Text: • z s K e m m m * — 5/ Mini Type 6 -p in P ackage Outline Transistors, Diodes $ .-M { 6 f t ? ) U n it i mm S E ^ O S - S I O S i) ¿ P li/ 'f y 'T -'y V -i'X T h 7 > y ' 7 J 2 m ? *k iL tm , - is . i f H ■ 43 f t I L * « T A B U S ' < 7 > r -


    OCR Scan     		tiA-Ac37' MA334 MA345 MA551 MA704 MA152WA MA152WK MA153 MA151WA MA151WK gn2011 XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT PDF