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    A04TJ Search Results

    A04TJ Result Highlights (3)

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    A04TJLB Coilcraft Inc General Purpose Inductor, 0.0125uH, 5%, 1 Element, Air-Core, SMD, 1618, CHIP, 1618, ROHS COMPLIANT Visit Coilcraft Inc
    A04TJLC Coilcraft Inc General Purpose Inductor, 0.0125uH, 5%, 1 Element, Air-Core, SMD, 1618, CHIP, 1618, ROHS COMPLIANT Visit Coilcraft Inc
    A04TJL Coilcraft Inc RF inductor, air core, 5/10% tol, SMT, RoHS Visit Coilcraft Inc
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    A04TJ Price and Stock

    JST Manufacturing

    JST Manufacturing A04TJWPF04RJWPF22KJ914OM

    4C M-F JWPF OM ASSEMBLY - 3 FT
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    JST Manufacturing A04TJWPF04TJWPF22KJ914OM

    4C M-M JWPF OM ASSEMBLY - 3 FT
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    JST Manufacturing A04TJWPF04RJWPF22KJ457OM

    4C M-F JWPF OM ASSEMBLY - 1.5 FT
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    JST Manufacturing A04TJWPF04TJWPF22KJ457OM

    4C M-M JWPF OM ASSEMBLY - 1.5 FT
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    JST Manufacturing A04TJWPF04RJWPF22KJ1981OM

    4C M-F JWPF OM ASSEMBLY - 6.5 FT
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    A04TJ Datasheets (4)

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    ECAD Model
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    A04TJ Coilcraft Inductor: RF: 12.5n: 5%: 150M: 137: Air: T/R Original PDF
    A04TJ Coilcraft Mini Spring Air Core Inductors Original PDF
    A04TJLB Coilcraft RF inductor, air core, 5/10% tol, SMT, RoHS Original PDF
    A04TJLC Coilcraft RF inductor, air core, 5/10% tol, SMT, RoHS Original PDF

    A04TJ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical


    Original     		RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc PDF

    DB-85025-870

    Abstract: 74L74 B45196H3106K109 PD85025-E capacitor 104k x7r 50 murata CAPACITOR 334k PD85025 code J4 diode EEVHB1V100P EXCELDRC35C
    Text: DB-85025-870 RF power amplifier demonstration board for UHF OFDM radio using PD85025-E Features • Excellent thermal stability ■ Frequency: 700 - 870 MHz ■ Supply voltage: 13.6 V ■ Output power: 10 WPEP ■ Gain: 13.7 ± 0.5 dB ■ Efficiency: 40 % - 51 %


    Original     		DB-85025-870 PD85025-E DB-85025-870 PD85025-E 74L74 B45196H3106K109 capacitor 104k x7r 50 murata CAPACITOR 334k PD85025 code J4 diode EEVHB1V100P EXCELDRC35C PDF

    334k capacitor

    Abstract: capacitor 104k x7r 50 104K capacitor 104k x7r 100 capacitor 22 pf capacitor 104k x7r 50 ATC capacitor 100b 100B Zener 104k x7r 100 murata CAPACITOR 334k
    Text: DB-85025-520 BOM Designator Manufacturer B1 PANASONIC Size B2 PANASONIC C1, C2 MURATA 1206 Value Comment Part Code Ferrite Bead EXCELDRC35C Ferrite Bead EXCELDRC35C 120 pF Capacitor GRM42-6 COG 121J 50 C3 MURATA 1206 1 nF Capacitor GRM42-6 COG 102J 50 C4 MURATA


    Original     		DB-85025-520 EXCELDRC35C GRM42-6 EEVHB1V100P 181JW 220JW 470JW 334k capacitor capacitor 104k x7r 50 104K capacitor 104k x7r 100 capacitor 22 pf capacitor 104k x7r 50 ATC capacitor 100b 100B Zener 104k x7r 100 murata CAPACITOR 334k PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		MRFE6VS25L MRFE6VS25LR5 PDF

    CAPACITOR 330 NF

    Abstract: PD85025-E ATC capacitor 100b 470jw murata CAPACITOR grm32nf51e106za01b 334k X7R 50 PD85025 102J DB-85025-520 EEVHB1V100P EXCELDRC35C
    Text: DB-85025-520 RF power amplifier using PD85025-E for UHF OFDM radio Features • Excellent thermal stability ■ Frequency: 340 - 520 MHz ■ Supply voltage: 15 V ■ Output power: 10 WPEP ■ Gain: 19 ± 1 dB ■ Efficiency: 45 % - 52 % ■ Load mismatch: 20:1


    Original     		DB-85025-520 PD85025-E DB-85025-520 CAPACITOR 330 NF ATC capacitor 100b 470jw murata CAPACITOR grm32nf51e106za01b 334k X7R 50 PD85025 102J EEVHB1V100P EXCELDRC35C PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 125W GaN Power Amplifier 225MHz to 450MHz The RFHA1042 is optimized for military communications, commercial wireless infrastructure and general purpose applications in the 225MHz to 450MHz frequency band. Using an advanced 48V high power density gallium nitride GaN


    Original     		RFHA1042 225MHz 450MHz RFHA1042 450MHz DS131023 PDF

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac PDF

    capacitor 10pf

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband   Single Circuit for 225MHz to 450MHz


    Original     		RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc capacitor 10pf PDF

    J307

    Abstract: ATC100B200JT500X ATC100B200 AN1955 C101 JESD22 MRF8S9100HR3 MRF8S9100HSR3 A114 A115
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 ATC100B200JT500X ATC100B200 AN1955 C101 JESD22 MRF8S9100HSR3 A114 A115 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1304L Rev. 0, 12/2013 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MMRF1304LR5 RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as


    Original     		MMRF1304L MMRF1304LR5 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical


    Original     		RFHA1042 225MHz 450MHz 450MHz RF400-2 -26dBc DS120613 PDF

    ATC100B102JT50XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC100B102JT50XT PDF

    MRF5S9070NR

    Abstract: No abstract text available
    Text: Document Number: MRF5S9070NR1 Rev. 7, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRF5S9070NR1 MRF5S9070NR PDF

    J307

    Abstract: J249 AD255A AN1955 MRF8S9100HR3 MRF8S9100HSR3 J032 ATC100B200JT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 J249 AD255A AN1955 MRF8S9100HSR3 J032 ATC100B200JT500XT PDF

    Fair-Rite bead

    Abstract: AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 Fair-Rite bead AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as


    Original     		MMRF1304N MMRF1304NR1 MMRF1304GNR1 MMRF1304NR1 PDF

    fr460

    Abstract: GRM32NF51E106ZA01B murata CAPACITOR grm32nf51e106za01b ATC capacitor 100b 470jw PD85025 102J panasonic inductor date code NH EXCELDRC35C GRM42-6 panasonic transistor date code
    Text: STEVAL-TDR022V1 RF power amplifier using the PD85025-E for UHF OFDM and 2-way mobile radios Features • Excellent thermal stability ■ Frequency: 340 - 520 MHz ■ Supply voltage: 15 V ■ Output power: 10 WPEP ■ Gain: 16.5 dB min. ■ IMD3 < -27 dBc at 10 WPEP


    Original     		STEVAL-TDR022V1 PD85025-E STEVAL-TDR022V1 PD85025-E fr460 GRM32NF51E106ZA01B murata CAPACITOR grm32nf51e106za01b ATC capacitor 100b 470jw PD85025 102J panasonic inductor date code NH EXCELDRC35C GRM42-6 panasonic transistor date code PDF

    smd code c9f

    Abstract: H2 SOT-89 RF amplifier smd c7f C2f SOT-89 GRM1885C1H3R9CZ01 smd c8f H2 SOT-89 amplifier GRM1885C1H3R3CZ01 PD84001 smd c2f
    Text: STEVAL-TDR006V1 2 stage RF power amp: PD84001 + PD84008L-E + LPF N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Current < 1.4 A ■ Input power < 10 dBm


    Original     		STEVAL-TDR006V1 PD84001 PD84008L-E STEVAL-TDR006V1 smd code c9f H2 SOT-89 RF amplifier smd c7f C2f SOT-89 GRM1885C1H3R9CZ01 smd c8f H2 SOT-89 amplifier GRM1885C1H3R3CZ01 PD84001 smd c2f PDF

    ATC100B160JT500XT

    Abstract: ESMG FREESCALE PACKING rfics marking 5 JESD22 MRF5S9070NR1 A113 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRF5S9070NR1 ATC100B160JT500XT ESMG FREESCALE PACKING rfics marking 5 JESD22 MRF5S9070NR1 A113 A114 A115 AN1955 PDF

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR022V1 RF power amplifier using the PD85025-E for UHF OFDM and 2-way mobile radios Features • Excellent thermal stability ■ Frequency: 340 - 520 MHz ■ Supply voltage: 15 V ■ Output power: 10 WPEP ■ Gain: 16.5 dB min. ■ IMD3 < -27 dBc at 10 WPEP


    Original     		STEVAL-TDR022V1 PD85025-E STEVAL-TDR022V1 PD85025-E PDF

    Untitled

    Abstract: No abstract text available
    Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package


    Original     		NPT2010 NPT2010 NDS-034 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as


    Original     		MMRF1304N MMRF1304NR1 MMRF1304GNR1 MMRF1304NR1 PDF

    ATC100B471JT200XT

    Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1 PDF