AGRB10XM
Abstract: JESD22-C101A DSA00206784.txt
Text: Data Sheet April 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.
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AGRB10XM
AGRB10
DS04-140RFPP
PB04-052RFPP)
AGRB10XM
JESD22-C101A
DSA00206784.txt
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Untitled
Abstract: No abstract text available
Text: Product Brief February 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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Original
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PDF
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AGRB10XM
PB04-052RFPP
PB04-009RFPP)
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet July 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.
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Original
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PDF
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AGRB10XM
AGRB10
DS04-203RFPP
DS04-140RFPP)
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Untitled
Abstract: No abstract text available
Text: Product Brief January 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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Original
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PDF
|
AGRB10XM
PB04-009RFPP
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