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    AN0140 Search Results

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    FreeWave Technologies Inc EAN0140YC

    1350-1454 MHZ, YAGI, 10 DBI 7 EL
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    DigiKey EAN0140YC Box 1
    • 1 $369.94
    • 10 $358.819
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    Super Micro Computer Inc FAN-0140L4

    80X80X38MM 9.5K RPM SC835B
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    NAC FAN-0140L4 1
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    AN0140 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AN0140 Supertex 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Scan PDF
    AN0140NA Unknown FET Data Book Scan PDF
    AN0140NA Supertex 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Scan PDF
    AN0140NA Topaz Semiconductor 400 V, 350 om, N-channel enhancement-mode D-MOS FET 8-channel array Scan PDF
    AN0140NB Supertex 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Scan PDF
    AN0140ND Supertex 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Scan PDF
    AN0140WG Supertex 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Scan PDF

    AN0140 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    rs232 cross

    Abstract: F64XX Z8F6403 Z8F64XX Z8F642
    Text: Application Note EEPROM Emulation with a Z8 Encore! XP Flash MCU AN014005-0508 Abstract Discussion This application note provides a method for utilizing a s e g m e n t o f Z i l o g ’s Z 8 E n c o r e ! X P Microcontroller’s MCU’s Flash memory to emulate


    Original     		AN014005-0508 AN0140SC01, AN0140-SC02, AN0140-SC03 rs232 cross F64XX Z8F6403 Z8F64XX Z8F642 PDF

    EIGHT MOSFET ARRAY

    Abstract: Piezoelectric 1Mhz AN0130 "high voltage Piezoelectric transducer" 100 Volt mosfet schematic circuit AN0130NA p channel mosfet 100v AN0116 AN0116NA AN0120
    Text: AN0116 AN0132 AN0120 AN0140 AN0130 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information * * † Order Number / Package BVDSS/ BVDGS min RDS(ON) (max) ID(ON) (min) IDSS* @ VDS = 100V Max IDSS* @ VDS = 250V Max 18-Lead Plastic DIP


    Original     		AN0116 AN0132 AN0120 AN0140 AN0130 18-Lead SOW-20* AN0116NA AN0116WG AN0116ND EIGHT MOSFET ARRAY Piezoelectric 1Mhz AN0130 "high voltage Piezoelectric transducer" 100 Volt mosfet schematic circuit AN0130NA p channel mosfet 100v AN0116NA PDF

    Z8F64

    Abstract: rs232 cross MCU FLASH Z8F6403 Z8F642
    Text: Application Note EEPROM Emulation with the Z8 Encore! Flash MCU AN014002-1003 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com Application Note EEPROM Emulation with the Z8 Encore!® Flash MCU


    Original     		AN014002-1003 Z8F64 rs232 cross MCU FLASH Z8F6403 Z8F642 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original     		10Gb/s EML10ZCA EML10 STM-64/OC-192 953Gb/s, TL9000 ISO9001 FM15040 ISO14001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCB The Bookham EML10WCB Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original     		10Gb/s EML10WCB EML10WCB STM-64/OC-192 100GHz 709Gb/s, EML10 21CFR ISO14001 TL9000 PDF

    dfb activation energy

    Abstract: TR-NWT-000870 bookham modulator 10Gb CDR DFB laser drivers 86106B energy absorption of diode nrz optical modulator EML10ZCA EML11
    Text: Data Sheet 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original     		10Gb/s EML10ZCA EML10 STM-64/OC-192 953Gb/s, 21CFR ISO14001 TL9000 ISO9001 dfb activation energy TR-NWT-000870 bookham modulator 10Gb CDR DFB laser drivers 86106B energy absorption of diode nrz optical modulator EML10ZCA EML11 PDF

    TR-NWT-000870

    Abstract: 10Gb CDR DFB laser drivers k 1535 5252 S diode 5817 specifications direct pm modulation circuit stm 64 laser diode 1550 nm EML10WCA EML11
    Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original     		10Gb/s EML10WCA EML10 STM-64/OC-192 100GHz 953Gb/s, 21CFR ISO14001 TL9000 TR-NWT-000870 10Gb CDR DFB laser drivers k 1535 5252 S diode 5817 specifications direct pm modulation circuit stm 64 laser diode 1550 nm EML10WCA EML11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original     		10Gb/s EML10ZCA EML10 STM-64/OC-192 953Gb/s, TL9000 ISO9001 FM15040 ISO14001 PDF

    Diode BFM

    Abstract: TR-NWT-000870 EML10WCA EML11 dfb activation energy nrz optical modulator
    Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original     		10Gb/s EML10WCA EML10 STM-64/OC-192 100GHz 953Gb/s, TL9000 ISO9001 FM15040 Diode BFM TR-NWT-000870 EML10WCA EML11 dfb activation energy nrz optical modulator PDF

    dfb activation energy

    Abstract: 10Gb CDR 5252 S diode 5817 specifications TR-NWT-000870 AN0140 EML10WCB EML11 GR-468 Diode BFM
    Text: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCB The Bookham EML10WCB Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original     		10Gb/s EML10WCB EML10WCB STM-64/OC-192 100GHz 953Gb/s, EML10 21CFR ISO14001 TL9000 dfb activation energy 10Gb CDR 5252 S diode 5817 specifications TR-NWT-000870 AN0140 EML11 GR-468 Diode BFM PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original     		10Gb/s EML10ZCA EML10 STM-64/OC-192 953Gb/s, TL9000 ISO9001 FM15040 ISO14001 PDF

    corning phase modulator

    Abstract: dfb activation energy
    Text: Preliminary 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the


    Original     		10Gb/s EML10ZCA EML10 STM-64/OC-192 953Gb/s, 21CFR TL9000 ISO9001 FM15040 corning phase modulator dfb activation energy PDF

    Teledyne Semiconductor

    Abstract: AN0110N AN0110NA AN0120N AN0120NA AN0130N AN0130NA AN0140N AN0140NA AN01-10
    Text: 2ÖE D TELEDYNE COMPONENTS • öTlTbOE QQQtabT 7 WÊ î î S ' S ü * îg j“ H AN0130N, AN0140N SEMICONDUCTOR N-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS ORDERING INFORMATION AN0110NA 100V,100Q 18 Pin Plastic DIP Description each channel AN0120NA


    OCR Scan     		aT17t AN0120N AN0130N, AN0140N AN0110NA AN0120NA AN0130NA AN0140NA 800pA AN0110N. Teledyne Semiconductor AN0110N AN0110NA AN0130N AN0140N AN0140NA AN01-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TELEDYNE 2ÖE D C O MP O N E NT S • aT17t.02 QQQbaLT 7 _ ■ ANOllON, AN0120N AN0130N, AN0140N tÏT ,IC3H=üÆ\ 5 Z SEMICONDUCTOR N-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS 7 ORDERING INFORMATION 18 Pin Plastic DIP DtscriptIon each channel AN0110NA


    OCR Scan     		aT17t AN0120N AN0130N, AN0140N AN0110NA AN0120NA AN0130NA AN0140NA 800pA N013C PDF

    DIODE G7

    Abstract: AN0116 10MVA AN0116NA AN0116ND AN0116WG AN0120 AN0120NA AN0140ND AN0130
    Text: AN0116 AN0132 fi Supertexinc. AN0140 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package BVdss/ Plastic SOW-20* 25mA 1nA — AN0116NA AN0116WG AN0116ND 3000 25mA — —


    OCR Scan     		AN0116 AN0132 AN0120 AN0140 AN0130 18-Lead SOW-20* AN0116NA AN0116WG AN0116ND DIODE G7 10MVA AN0116ND AN0120NA AN0140ND AN0130 PDF

    d3s diode

    Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
    Text: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2


    OCR Scan     		18-Lead AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA SOW-20* AN0116WG AN0132WG AN0140WG d3s diode EIGHT n-channel MOSFET ARRAY AN0140ND PDF

    LM373

    Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.


    OCR Scan     		92260-Fontenay-Aux-Roses 25956F HX3866 LM373 MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P PDF

    EIGHT MOSFET ARRAY DIP-18

    Abstract: AN0116NA AN0116NB AN0116ND AN0116WG AN0120NA AN0120NB AN0130NA AN0130NB SOW-20
    Text: SUPERTEX INC Dl D Ì 07735^5 DDQ17SÖ 0 f * AN01 8 Channel Power M O SFET Array Monolithic N-channel Enchancement Mode Ordering Information b v dss/ ^D SfO N ) min) 160V 200V 300V 320V 400V (max) 350Q 3000 300n 350n 350Q JI b v dqs <3>V’ d s. = 100V Max


    OCR Scan     		18-Lead SOW-20* AN0116NB AN0116NA AN0116WG AN0116ND AN0120NB AN0120NA AN0T20ND EIGHT MOSFET ARRAY DIP-18 AN0116ND AN0120NA AN0130NA AN0130NB SOW-20 PDF

    AN0140N

    Abstract: No abstract text available
    Text: 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package B VDSS/ = 18-Lead Plastic Plastic DIP SOW-20* — AN0116NA AN0116WG — — AN0120NA — AN0120ND 25mA — — AN0130NA — AN0130ND 350ft 25mA — 350ÌÌ


    OCR Scan     		18-Lead AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA SOW-20* AN0116WG 300ft 350ft AN0140N PDF

    pj 89 diode

    Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
    Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­


    OCR Scan     		O-220 O-243 OT-89) OT-23 20-Terminal pj 89 diode LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89 PDF

    pj 89 diode

    Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
    Text: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct


    OCR Scan     		OT-23 TN2101K1 TN2106K1 TN2124K1 TP2106K1 VN2110K1 VP2110K1 -10ack HV9111 HV9112 pj 89 diode HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode PDF

    8 Channel Power Mosfet Array

    Abstract: DDQ17S EIGHT MOSFET ARRAY AN0140ND
    Text: SUPERTEX INC Dl dÌ J 07735*15 DDQ17SÖ Q 7 ~ V ^ ^ 5 ~ AN01 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Ordering Information Order Number / Package b v dss/ 1 * V DS = BVd0S min ^D S {O N ) ' d (ON) (max) (min) 100V Max 1nA 'D SS


    OCR Scan     		DDQ17SÖ 18-Lead AN0116NB AN0120NB AN0130NB AN0132NB AN0140NB AN0116NA AN0120NA 8 Channel Power Mosfet Array DDQ17S EIGHT MOSFET ARRAY AN0140ND PDF