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    onsemi FAN3100CSX

    IC GATE DRVR LOW-SIDE SOT23-5
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    Rochester Electronics FAN3100CSX 2,277 1
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    onsemi FAN3100TSX

    IC GATE DRVR LOW-SIDE SOT23-5
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    DigiKey FAN3100TSX Cut Tape 15,826 1
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    onsemi FAN3100CMPX

    IC GATE DRVR LOW-SIDE 6MLP
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    DigiKey FAN3100CMPX Digi-Reel 11,418 1
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    KEMET Corporation R49AN31004001K

    CAP FILM 0.1UF 10% 800VDC RADIAL
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    DigiKey R49AN31004001K Bulk 498 1
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    Abracon Corporation ALAN310001-3J61DT

    XFRMR LAN 1CT:1CT 350UH
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    Find more AN3100 price and stock on Findchips.com

    AN3100 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AN3100 Freescale Semiconductor General Purpose Amplifier Biasing Original PDF
    AN3-1005-50RO International Manufacturing Services Thick Film High Power Chip Terminations on Aluminum Nitride Original PDF
    AN3-1005SG-50RO International Manufacturing Services Thick Film High Power Chip Terminations on Aluminum Nitride Original PDF

    AN3100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    darlington pair transistor

    Abstract: Darlington pair AN3100 AN31001
    Text: Freescale Semiconductor Application Note AN3100 Rev. 2, 7/2008 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single


    Original     		PDF AN3100 darlington pair transistor Darlington pair AN3100 AN31001

    darlington pair power transistor

    Abstract: AN31001 current amplifier note darlington AN3100 MMG3001NT1 MMG3002NT1 MMG3003NT1 freescale power RF products darlington pair transistor
    Text: Freescale Semiconductor Application Note AN3100 Rev. 0, 3/2005 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single


    Original     		PDF AN3100 darlington pair power transistor AN31001 current amplifier note darlington AN3100 MMG3001NT1 MMG3002NT1 MMG3003NT1 freescale power RF products darlington pair transistor

    pcb layout design mobile DDR

    Abstract: DDR2 pcb layout DDR2 sdram pcb layout guidelines ddr2 ram slot pin detail ddr2 ram SPEAr310 DDR1 pcb layout 1 gb ddr2 ram ddr pcb layout SPEAr3* AN2674
    Text: AN3100 Application note Configuring the SPEAr3xx multi-port memory controller MPMC for external DDR SDRAM Introduction The SPEAr3xx embedded MPU family (SPEAr300, SPEAr310 and SPEAr320) features a multi-port memory controller for interfacing with external DDR or DDR2 memory devices.


    Original     		PDF AN3100 SPEAr300, SPEAr310 SPEAr320) pcb layout design mobile DDR DDR2 pcb layout DDR2 sdram pcb layout guidelines ddr2 ram slot pin detail ddr2 ram DDR1 pcb layout 1 gb ddr2 ram ddr pcb layout SPEAr3* AN2674

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3013NT1 Rev. 4, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3013NT1 Broadband High Linearity Amplifier The MMG3013NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad


    Original     		PDF MMG3013NT1 MMG3013NT1

    MMG3006N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 0, 1/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A, small - signal,


    Original     		PDF MMG3006NT1 MMG3006NT1 MMG3006N

    FR408

    Abstract: 66417 AN1955 C0603C103J5RAC ECUV1H150JCV MMG3004NT1 AN377 275-232 5 vdc 4-0308 2825 qfn
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 5, 5/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


    Original     		PDF MMG3004NT1 MMG3004NT1 FR408 66417 AN1955 C0603C103J5RAC ECUV1H150JCV AN377 275-232 5 vdc 4-0308 2825 qfn

    A113

    Abstract: A114 A115 AN1955 C0603C102J5RAC C0603C103J5RAC C101 ML200C MMG3001NT1
    Text: Freescale Semiconductor Technical Data Document Number: MMG3001NT1 Rev. 6, 7/2007 Heterojunction Bipolar Transistor Technology InGaP HBT Broadband High Linearity Amplifier MMG3001NT1 The MMG3001NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A,


    Original     		PDF MMG3001NT1 MMG3001NT1 A113 A114 A115 AN1955 C0603C102J5RAC C0603C103J5RAC C101 ML200C

    Amplifier SOT-89 c4

    Abstract: ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87
    Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 5, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad


    Original     		PDF MMG3003NT1 MMG3003NT1 Amplifier SOT-89 c4 ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,


    Original     		PDF MMG3006NT1 MMG3006NT1

    C0603C105J5RAC

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3H21NT1 Rev. 1, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3H21NT1 Broadband High Linearity Amplifier The MMG3H21NT1 is a General Purpose Amplifier that is internally input


    Original     		PDF MMG3H21NT1 MMG3H21NT1 C0603C105J5RAC

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3010NT1 Rev. 5, 3/2008 Heterojunction Bipolar Transistor InGaP HBT Broadband High Linearity Amplifier MMG3010NT1 0 - 6000 MHz, 15 dB 17 dBm InGaP HBT Features • Frequency: 0 to 6000 MHz • P1dB: 17 dBm @ 900 MHz


    Original     		PDF MMG3010NT1 MMG3010NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3001NT1 Rev. 8, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT NOT RECOMMENDED FOR NEW DESIGN The MMG3001NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A,


    Original     		PDF MMG3001NT1 MMG3001NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3009NT1 Rev. 6, 2/2012 Heterojunction Bipolar Transistor InGaP HBT Broadband High Linearity Amplifier MMG3009NT1 The MMG3009NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A,


    Original     		PDF MMG3009NT1 MMG3009NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 8, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


    Original     		PDF MMG3004NT1 MMG3004NT1

    GJM1555C1H180GB01

    Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
    Text: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed


    Original     		PDF MML20242H MML20242HT1 GJM1555C1H180GB01 GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625

    Rogers RO4350B

    Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
    Text: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed


    Original     		PDF MML09212H MML09212HT1 Rogers RO4350B RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3013NT1 Rev. 6, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3013NT1 Broadband High Linearity Amplifier The MMG3013NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad


    Original     		PDF MMG3013NT1 MMG3013NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMA25312B Rev. 0, 9/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA25312BT1 High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and


    Original     		PDF MMA25312B MMA25312BT1 MMA25312B

    24236

    Abstract: 33369 A113 A114 A115 AN1955 C0603C102J5RAC C0603C103J5RAC C101 ML200C
    Text: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 4, 7/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad


    Original     		PDF MMG3012NT1 MMG3012NT1 24236 33369 A113 A114 A115 AN1955 C0603C102J5RAC C0603C103J5RAC C101 ML200C

    27125-120

    Abstract: 28504 A113 A114 A115 AN1955 C0603C102J5RAC C0603C103J5RAC C101 ML200C
    Text: Freescale Semiconductor Technical Data Document Number: MMG3009NT1 Rev. 4, 7/2007 Heterojunction Bipolar Transistor InGaP HBT Broadband High Linearity Amplifier MMG3009NT1 The MMG3009NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A,


    Original     		PDF MMG3009NT1 MMG3009NT1 27125-120 28504 A113 A114 A115 AN1955 C0603C102J5RAC C0603C103J5RAC C101 ML200C

    108-055

    Abstract: IRL 8743 trANSISTOR 108-055 112247 A113 A114 mmg3013 AN1955 C0603C103J5RAC C101
    Text: Freescale Semiconductor Technical Data Document Number: MMG3013NT1 Rev. 5, 7/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3013NT1 Broadband High Linearity Amplifier The MMG3013NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad


    Original     		PDF MMG3013NT1 MMG3013NT1 108-055 IRL 8743 trANSISTOR 108-055 112247 A113 A114 mmg3013 AN1955 C0603C103J5RAC C101

    m3002n

    Abstract: RF transistor marking IN SOT-89 M3002
    Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier The MMG3002NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A,


    Original     		PDF MMG3002NT1 OT--89 MMG3002NT1 m3002n RF transistor marking IN SOT-89 M3002

    MMG3001NT1

    Abstract: 014728
    Text: Freescale Semiconductor Technical Data Document Number: MMG3001NT1 Rev. 8, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT NOT RECOMMENDED FOR NEW DESIGN The MMG3001NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A,


    Original     		PDF MMG3001NT1 MMG3001NT1 014728

    275-232

    Abstract: 38494 FR408 66417 A113 A114 A115 AN1955 C0603C103J5RAC 250328
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 3, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high


    Original     		PDF MMG3004NT1 MMG3004NT1 275-232 38494 FR408 66417 A113 A114 A115 AN1955 C0603C103J5RAC 250328