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    AO8816 Search Results

    AO8816 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO8816 Alpha & Omega Semiconductor Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8816L Alpha & Omega Semiconductor Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF

    AO8816 Datasheets Context Search

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    AO8816

    Abstract: No abstract text available
    Text: AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO8816 AO8816

    Untitled

    Abstract: No abstract text available
    Text: AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO8816 AO8816

    Untitled

    Abstract: No abstract text available
    Text: Rev 0: July 2004 AO8816, AO8816L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This


    Original     		PDF AO8816, AO8816L AO8816 AO8816L

    AO8816

    Abstract: AO8816L
    Text: AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO8816 AO8816 AO8816L AO8816L

    AO4832

    Abstract: AO4832L AO8816
    Text: AO4832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a


    Original     		PDF AO4832 AO4832 AO4832L AO8816