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    DIODE marking S4 23a

    Abstract: No abstract text available
    Text: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C G S MOSFET • -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A Reliable and Rugged NC D


    Original     		PDF APM2807QB -20V/-2 500mA. APM2807 150oC R0-2000 DIODE marking S4 23a

    APM2807QB

    Abstract: ANPEC APM2807 B102 JESD-22 J-STD-020D
    Text: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET • C G A S NC D -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V D C RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A NC SBD G S (3)


    Original     		PDF APM2807QB -20V/-2 500mA. JESD-22, APM2807QB ANPEC APM2807 B102 JESD-22 J-STD-020D