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    50n03s2-07

    Abstract: 50N03 MOSFET having TO-252 PAckage APPS071E TO252-3 rthjc copper bond wire infineon SPP100N04S2L03 100n04s2l-03 50N06 50N03S2L-06
    Text: Application Note, V 1.0, June 2002 APPS071E  OptiMOS PowerBondä by Jean-Philippe Boeschlin Automotive Power Never stop -1- thinking. APPS071E OptiMOS  PowerBondä Powerbond II II Powerbond 1. Abstract Powerbond II Powerbond This Application Note introduces Infineon


    Original     		PDF APPS071E 50n03s2-07 50N03 MOSFET having TO-252 PAckage APPS071E TO252-3 rthjc copper bond wire infineon SPP100N04S2L03 100n04s2l-03 50N06 50N03S2L-06

    1n0608

    Abstract: infineon 1n0608 SMD Diode V6 marking code SPP80N06S-08 1n06 PG-TO263-3-2 SPB80N06S-08 SPI80N06S-08 smd diode v6 58 smd diode V6 64
    Text: SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features • N-channel - Normal Level -Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0000-84808 1N0608 1n0608 infineon 1n0608 SMD Diode V6 marking code SPP80N06S-08 1n06 PG-TO263-3-2 SPB80N06S-08 SPI80N06S-08 smd diode v6 58 smd diode V6 64

    1n0608

    Abstract: infineon 1n0608 SPB80N06S-08 SPP80N06S-08 marking CODE R SMD DIODE to262 pcb footprint TRANSISTOR SMD MARKING CODE ag Q67060-S6185 SPI80N06S-08 Q67060-S6186
    Text: SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67060-S6185 1N0608 1n0608 infineon 1n0608 SPB80N06S-08 SPP80N06S-08 marking CODE R SMD DIODE to262 pcb footprint TRANSISTOR SMD MARKING CODE ag Q67060-S6185 SPI80N06S-08 Q67060-S6186