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    APT10M Price and Stock

    Microchip Technology Inc APT10M19SVRG

    MOSFET N-CH 100V 75A D3PAK
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    Microchip Technology Inc APT10M19SVRG
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    TME APT10M19SVRG 1
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    NAC APT10M19SVRG Tube 29
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    Microchip Technology Inc APT10M19BVRG

    MOSFET N-CH 100V 75A TO247
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    DigiKey APT10M19BVRG Tube 53 1
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    Avnet Americas APT10M19BVRG Tube 4,171 26 Weeks 1
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    Microchip Technology Inc APT10M19BVRG
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    Onlinecomponents.com APT10M19BVRG
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    TME APT10M19BVRG 1
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    NAC APT10M19BVRG Tube 31
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    Microchip Technology Inc APT10M11LVRG

    MOSFET N-CH 100V 100A TO264
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    DigiKey APT10M11LVRG Tube 20 1
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    Avnet Americas APT10M11LVRG Tube 26 Weeks 20
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    Mouser Electronics APT10M11LVRG
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    Microchip Technology Inc APT10M11LVRG
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    Onlinecomponents.com APT10M11LVRG
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    TME APT10M11LVRG 1
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    NAC APT10M11LVRG Tube 9
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    Microchip Technology Inc APT10M07JVR

    MOSFET N-CH 100V 225A ISOTOP
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    Microchip Technology Inc APT10M11JVR

    MOSFET N-CH 100V 144A ISOTOP
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    APT10M Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10M07 Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT10M07JVFR Advanced Power Technology POWER MOS V Original PDF
    APT10M07JVFR Microsemi Power MOS V FREDFET Original PDF
    APT10M07JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10M07JVR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 225A ISOTOP Original PDF
    APT10M09B2VFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10M09B2VFR Microsemi Power MOS V FREDFET Original PDF
    APT10M09B2VFRG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 100A T-MAX Original PDF
    APT10M09B2VFRG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A T-MAX Original PDF
    APT10M09B2VR Advanced Power Technology N-Channel power MOSFET Original PDF
    APT10M09LVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10M09LVFR Microsemi Power MOS V FREDFET Original PDF
    APT10M09LVFRG Microsemi Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.009; BVDSS (V): 100; Original PDF
    APT10M09LVR Advanced Power Technology N-Channel power MOSFET Original PDF
    APT10M11B2VFR Microsemi Power MOS V FREDFET Original PDF
    APT10M11B2VFRG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 100A T-MAX Original PDF
    APT10M11B2VFRG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A T-MAX Original PDF
    APT10M11B2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10M11JVFR Microsemi Power MOS V FREDFET Original PDF
    APT10M11JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

    APT10M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    isotop mosfet 100V

    Abstract: APT10M11JVRU2
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT10M11JVRU2 OT-227) isotop mosfet 100V APT10M11JVRU2

    APT10M11LVR

    Abstract: No abstract text available
    Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVR 0.011Ω 100V 144A POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11JVR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT10M20BLL APT10M20SLL 100V 92A 0.020W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT10M20BLL APT10M20SLL O-247 O-247

    APT10M25BVR

    Abstract: No abstract text available
    Text: APT10M25BVR 75A 0.025Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT10M25BVR O-247 O-247 APT10M25BVR

    APT10M25SVR

    Abstract: No abstract text available
    Text: APT10M25SVR 75A 0.025Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M25SVR Co632) APT10M25SVR

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original     		PDF APT10M11JVRU2 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT10M25SVR 75A 0.025Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M25SVR

    Untitled

    Abstract: No abstract text available
    Text: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11B2VFR APT10M11LVFR O-264 O-264 APT10M11 O-247

    APT10M30AVR

    Abstract: No abstract text available
    Text: APT10M30AVR 65A 0.030Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT10M30AVR O-204AE) APT10M30AVR

    MOSFET Module 100v 1000A

    Abstract: APT10M11JVRU3 SOT-227 heatsink
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT10M11JVRU3 OT-227) MOSFET Module 100v 1000A APT10M11JVRU3 SOT-227 heatsink

    APT10M07JVFR

    Abstract: No abstract text available
    Text: APT10M07JVFR Ω 100V 225A 0.007Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M07JVFR OT-227 E145592 APT10M07JVFR

    APT10M19BVR

    Abstract: No abstract text available
    Text: APT10M19BVR 75A 0.019Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT10M19BVR O-247 O-247 APT10M19BVR

    APT10M11B2VFR

    Abstract: TF6646 APT10M11LVFR
    Text: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11B2VFR APT10M11LVFR O-264 O-264 APT10M11 O-247 APT10M11B2VFR TF6646 APT10M11LVFR

    APT10M07JVFR

    Abstract: No abstract text available
    Text: APT10M07JVFR Ω 100V 225A 0.007Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M07JVFR OT-227 E145592 APT10M07JVFR

    APT10M13JNR

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o lo g y APT10M13JNR 100V 150A 0.013Û APT10M15JNR 100V 140A 0.015Ü ISOTOP® "UL Recognized" File No. E145592 S POWER MOS IV« AVALANCHE RATED ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		PDF APT10M13JNR APT10M15JNR E145592 APT10M13JNR APT10M15JNR OT-227

    Q100A

    Abstract: APT10M25BNR
    Text: A d v a n ced P o w er Te c h n o l o g y APT10M25BNR 100V APT10M30BNR 100V POWER MOS IV' 75A 75A 0.025Í1 0.030Q AVALANCHE RATED N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIM UM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT10M25BNR APT10M30BNR O-247AD Q100A

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y APT10M25BNFR APT10M30BNFR POWER MOS IV‘ 100V 75A 0.025Q 100V 75A 0.030Q AVALANCHE RATED FREDFET N -C H A NN EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT10M25BNFR APT10M30BNFR O-247AD

    Untitled

    Abstract: No abstract text available
    Text: ADVAN CED P o w er Te c h n o l o g y APT10M07JVR 100V ' 225A 0.007a POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT10M07JVR OT-227 APT10M07JVR 142uH, OT-227

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er T e c h n o lo g y 9 APT10M11JVR 100V 144A 0.01m POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT10M11JVR OT-227 APT10M11 OT-227

    kd 503

    Abstract: No abstract text available
    Text: ADVANCED PO W ER Te c h n o l o g y " o D O APT10M25BNR 100V APT10M30BNR 100V S 75A 0.02511 67A 0.030Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DS= All Ratings: T c = 2 5 °C unless otherwise specified.


    OCR Scan     		PDF APT10M25BNR APT10M30BNR APT10M25BNR APT10M30BNR STD-750 533fiH, O-247AD kd 503

    PT10M

    Abstract: No abstract text available
    Text: A d vanced P o w er m T tz r*u td fii flß y APT10M13JNR 100V 150A 0.013ft APT10M15JNR 100V 140A 0.015ft IS O T O P 1 POWER MOS IV‘ J Ç ^ " U L R ecognized" File No. E145592 S AVALANCHE RATED ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT10M13JNR 013ft APT10M15JNR 015ft E145592 APT10M 13JNR PT10M OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT10M25BVR • R A dvan ced W /Æ PO W ER Te c h n o l o g y ' io o v 75a 0 .0 25Q POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®


    OCR Scan     		PDF APT10M25BVR O-247

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Tec h n o lo g y APT10M25BNFR APT10M30BNFR POWER MOS IVe 0.025a 100V 75A 100V 75A 0.030Í2 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT10M25BNFR APT10M30BNFR APT10M25/10M 30BNFR APT10M25/10M30BNFR O-247AD GGD1411