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    APT15GP60B Price and Stock

    Microchip Technology Inc APT15GP60BDQ1G

    IGBT PT 600V 56A TO247
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    DigiKey APT15GP60BDQ1G Tube 209 1
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    Avnet Americas APT15GP60BDQ1G Tube 26 Weeks 100
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    Mouser Electronics APT15GP60BDQ1G 59
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    Microchip Technology Inc APT15GP60BDQ1G
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    Onlinecomponents.com APT15GP60BDQ1G
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    TME APT15GP60BDQ1G 1
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    NAC APT15GP60BDQ1G Tube 71
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    Richardson RFPD APT15GP60BDQ1G 100
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    Microchip Technology Inc APT15GP60BG

    IGBT PT 600V 56A TO247
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    Avnet Americas APT15GP60BG Tube 26 Weeks 110
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    Mouser Electronics APT15GP60BG
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    Newark APT15GP60BG Bulk 110
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    Microchip Technology Inc APT15GP60BG
    • 1 $4.73
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    Onlinecomponents.com APT15GP60BG
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    TME APT15GP60BG 1
    • 1 $6.85
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    NAC APT15GP60BG Tube 81
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    EBV Elektronik APT15GP60BG 27 Weeks 110
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    Microchip Technology Inc APT15GP60BDLG

    IGBT PT 600V 56A TO247
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    Microsemi Corporation APT15GP60BG

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    Quest Components APT15GP60BG 64
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    Microsemi Corporation APT15GP60BDQ1G

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    Quest Components APT15GP60BDQ1G 26
    • 1 $9.936
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    ComSIT USA APT15GP60BDQ1G 3,357
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    APT15GP60B Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT15GP60B Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT15GP60B Microsemi Insulated Gate Bipolar Transistor-PT High Speed Original PDF
    APT15GP60BDF1 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT15GP60BDLG Microsemi Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-247CS; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 25; Original PDF
    APT15GP60BDQ1 Advanced Power Technology MOSFET Original PDF
    APT15GP60BDQ1 Microsemi Insulated Gate Bipolar Transistor-PT High Speed Original PDF
    APT15GP60BDQ1G Advanced Power Technology IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 250W TO247 Original PDF
    APT15GP60BDQ1G Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 56A 250W TO247 Original PDF
    APT15GP60BG Advanced Power Technology IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 250W TO247 Original PDF
    APT15GP60BG Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 56A 250W TO247 Original PDF
    APT15GP60BSC Unknown High Voltage, 600V 56A, IGBT N-Type Original PDF

    APT15GP60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 7428 datasheet

    Abstract: APT15GP60BDF1 T0-247
    Text: APT15GP60BDF1 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BDF1 O-247 IC 7428 datasheet APT15GP60BDF1 T0-247

    IC 7413

    Abstract: APT15GP60B T0-247
    Text: APT15GP60B 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60B O-247 IC 7413 APT15GP60B T0-247

    Untitled

    Abstract: No abstract text available
    Text: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BDL O-247

    Untitled

    Abstract: No abstract text available
    Text: APT15GP60BDQ1 APT15GP60BDQ1 TYPICAL PERFORMANCE CURVES 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BDQ1 O-247

    IC 7449

    Abstract: IC 7449 datasheet 7449 diode 7449 APT15GP60BDQ1 APT6017LLL T0-247
    Text: APT15GP60BDQ1 APT15GP60BDQ1 TYPICAL PERFORMANCE CURVES 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BDQ1 O-247 IC 7449 IC 7449 datasheet 7449 diode 7449 APT15GP60BDQ1 APT6017LLL T0-247

    IC 7413

    Abstract: Diode UJ APT15GP60B APT15GP60S
    Text: APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60B APT15GP60S IC 7413 Diode UJ APT15GP60B APT15GP60S

    Untitled

    Abstract: No abstract text available
    Text: APT15GP60BDQ1 TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BDQ1 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BDL O-247

    APT15GP60BDL

    Abstract: No abstract text available
    Text: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BDL

    IC 7413 datasheet

    Abstract: IC 7413 IC 7413 DATA SHEET APT15GP60B APT15GP60S
    Text: APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60B APT15GP60S IC 7413 datasheet IC 7413 IC 7413 DATA SHEET APT15GP60B APT15GP60S

    Untitled

    Abstract: No abstract text available
    Text: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BDL

    IC 7413

    Abstract: APT15GP60B T0-247
    Text: APT15GP60B 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60B O-247 IC 7413 APT15GP60B T0-247

    diode 7449

    Abstract: IC 7449 IC 7449 datasheet APT15GP60BDQ1 APT6017LLL T0-247
    Text: APT15GP60BDQ1 APT15GP60BDQ1 TYPICAL PERFORMANCE CURVES 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BDQ1 O-247 diode 7449 IC 7449 IC 7449 datasheet APT15GP60BDQ1 APT6017LLL T0-247

    IC 7448

    Abstract: data sheet IC 7448 7448 ic cathode drivers 7448 datasheet IC 7448 APT15GP60BSC Schottky Diode 400V 15A 7448 ic data sheet 7448 p ic T0-247
    Text: TYPICAL PERFORMANCE CURVES APT15GP60BSC APT15GP60BSC 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BSC O-247 Gate610) IC 7448 data sheet IC 7448 7448 ic cathode drivers 7448 datasheet IC 7448 APT15GP60BSC Schottky Diode 400V 15A 7448 ic data sheet 7448 p ic T0-247

    15gp60

    Abstract: No abstract text available
    Text: APT15GP60BD1 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BD1 O-247 APT15GP60BD1 T0-247 15gp60

    15GP60BDF1

    Abstract: 15gp60b APT15GP60BDF1 15GP60BDF 15gp60
    Text: APT15GP60BDF1 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60BDF1 O-247 APT15GP60BDF1 T0-247 15GP60BDF1 15gp60b 15GP60BDF 15gp60

    Untitled

    Abstract: No abstract text available
    Text: APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT15GP60B APT15GP60S

    30GP60BDF1

    Abstract: No abstract text available
    Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original
    PDF APT30GP60BDF1 O-247 T0-247 30GP60BDF1

    APT0201

    Abstract: APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross
    Text: Application Note APT0302 Rev. A April 4, 2003 Latest Technology PT IGBTs vs. Power MOSFETs Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 USA Based on a paper presented at PCIM China 2003


    Original
    PDF APT0302 APT0201 APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original
    PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original
    PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


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    PDF