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    APT20GS60SRDQ1 Search Results

    APT20GS60SRDQ1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT20GS60SRDQ1G Microsemi Insulated Gate Bipolar Transistor - NPT High Speed; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 2.8; IC (A): 20; Original PDF

    APT20GS60SRDQ1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MOSFET welding INVERTER 200A

    Abstract: H bridge 300v 30a jc5010
    Text: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		APT20GS60BRDQ1 APT20GS60SRDQ1 100kHz, MOSFET welding INVERTER 200A H bridge 300v 30a jc5010 PDF

    Diode 400V 20A

    Abstract: igbt 400V 20A MOSFET welding INVERTER 200A MIC4452 power Diode 400V 20A
    Text: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		APT20GS60BRDQ1 APT20GS60SRDQ1 100kHz, Diode 400V 20A igbt 400V 20A MOSFET welding INVERTER 200A MIC4452 power Diode 400V 20A PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		APT20GS60BRDQ1 APT20GS60SRDQ1 100kHz, PDF