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    APT30GF60BN

    Abstract: APT30GF60BNU1
    Text: ADVANCED PO W ER Te c h n o lo g y APT30GF60BNU1 600V 30A WER MOS IV IGBÏ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST PARALLEL DIODE M A X IM U M R A TIN G S Symbol VcE S All Ratings: T c = 25°C unless otherwise specified.


    OCR Scan     		PDF APT30GF60BNU1 O-247AD APT30GF60BN

    APT POWER FET

    Abstract: APT110GF60JN APT65GL100BN APT25GF100BN APT30GF60BN APT45GL100BN IGBT SCHEMATIC IGBT 1500 volts APT35GL60BN IGBT 1000 VOLTS TO 1500 VOLTS
    Text: APT IGBT PRODUCTS BVces V ce ON lc,(25C ) lC2(90°C) tf(IND@125 C) Pd APT New Product Volts Volts Amps Amps nsec Watts Part No. Comments LOW CONDUCTION LOSS IGBT PRODUCT FAMILY 1000 2.8 3.0 3.0 65 45 30 35 25 17 1500 1500 1500 260 200 147 APT65GL100BN APT45GL100BN


    OCR Scan     		PDF APT65GL100BN APT45GL100BN APT30GL100BN APT75GL60BN APT50GL60BN APT35GL60BN APT50GF100BN APT40GF100BN APT25GF100BN APT55GF60BN APT POWER FET APT110GF60JN APT25GF100BN APT30GF60BN IGBT SCHEMATIC IGBT 1500 volts IGBT 1000 VOLTS TO 1500 VOLTS