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    IGBT MODULE 600V 67A 245W ISOTOP
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    APT30GP60JDQ1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30GP60JDQ1 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT30GP60JDQ1 Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 67A 245W SOT227 Original PDF
    APT30GP60JDQ1 Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT 600V 67A 245W SOT227 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: APT30GP60JDQ1 600V TYPICAL PERFORMANCE CURVES APT30GP60JDQ1 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT30GP60JDQ1 E145592

    APT30GP60JDQ1

    Abstract: No abstract text available
    Text: APT30GP60JDQ1 600V TYPICAL PERFORMANCE CURVES APT30GP60JDQ1 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT30GP60JDQ1 E145592 APT30GP60JDQ1

    Untitled

    Abstract: No abstract text available
    Text: APT30GP60JDQ1 G 600V TYPICAL PERFORMANCE CURVES APT30GP60JDQ1 APT30GP60JDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT30GP60JDQ1 APT30GP60JDQ1G* Gate-Emit96)

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF