Untitled
Abstract: No abstract text available
Text: APT501OLVFR A dvan ced W7Æ P o w e r Te c h n o l o g y 500v 47a 0.1000 POWER MOSV FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT501OLVFR
O-264
O-264AA
MIL-STD-750
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25C5250
Abstract: No abstract text available
Text: • R A dvanced W .\A APT501OLVFR pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT501OLVFR
O-264
25C5250
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Untitled
Abstract: No abstract text available
Text: APT5010LVFR A dvanced pow er Te c h n o lo g y 5 0 0 V POWER MOS V 4 7 A 0 .1 0 0 Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5010LVFR
O-264
APT5010LVFR
-10mS
-100mS
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