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    APT5040CN Search Results

    APT5040CN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT5040CNR Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF

    APT5040CN Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: APT5040CN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)


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    PDF APT5040CN

    diode 2U 88

    Abstract: 2u 87 x diode APT5040CN MJ 800
    Text: D TO-254 G 500V 13.0A 0.400Ω APT5040CNR S TM POWER MOS IV Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching • 100% Avalanche Tested • Low Gate Charge • Similar to the 2N7228, JX2N7228 and JV2N7228 MAXIMUM RATINGS


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    PDF O-254 APT5040CNR 2N7228, JX2N7228 JV2N7228 O-254 O-254AA diode 2U 88 2u 87 x diode APT5040CN MJ 800

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    Untitled

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y APT5040CNR POWER MOS IV 500V 13.0A 0.400ft Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching 100% Avalanche Tested • Low Gate Charge Similar to the 2N7228, JX2N7228 and JV2N7228


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    PDF APT5040CNR 400ft O-254 2N7228, JX2N7228 JV2N7228 APT5040CNR O-254AA

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POUER TECHNOLOGY blE H • O B ä T W i 00007L1 IS! ■ AVP ADVANCED POWER! Te c h n o l o g y O O M O s POWER MOS IV APT5040CN APT4540CN APT5050CN APT4550CN 500V 13.0A 0.40D 450V 13.0A 0.40Î2 500V 11.5A 0.50Î2 450V 11.5A 0.50Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    PDF 00007L1 APT5040CN APT4540CN APT5050CN APT4550CN 4540CN 5040CN 4550CN 5050CN O-254AA

    APT1003R5CN

    Abstract: APT1003R5GN APT801 APT5040CN APT801R2CN APT1002RCN APT4055GN APT5085GN APT601R2GN APT6060CN
    Text: ADVANCED P OWE R TECHNOLOGY 20E D • OaSTTDT 0000277 1 T -3 ? - / 3 H ER M ETIC IS O L A T E D CO M M ERCIA L AND H I-R E L M ILITA R Y N -CHAN NEL M O S F ET S IN P U T CAPAC­ IT A N C E C IS S PF) PO W ER D IS S I­ P A T IO N PD(MAX) (WATTS) N O TES


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    PDF 02S7TDT APT1003R5GN O-257AA O-220 APT802RGN APT601R2GN APT5085GN APT4055GN APT1002RCN O-254AA APT1003R5CN APT801 APT5040CN APT801R2CN APT6060CN

    Untitled

    Abstract: No abstract text available
    Text: advanced power " TA technology jy I* T DE I a S S T T D T □□□□□10 3 e! -15 For Additional Information Contact A PT Sales Representatives O r The Factory. Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1003R5CN APT1004R2CN APT902R5CN APT903RCN


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    PDF APT1003R5CN APT1004R2CN APT902R5CN APT903RCN APT802RCN APT802R4CN APT601R2CN APT601R6CN APT551RCN APT551R2CN

    APT1004RGN

    Abstract: No abstract text available
    Text: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750


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    PDF APT5011AFN APT40M 80AFN APT1004RGN

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWER T EC HN O LO GY 2GE D • G2S7TDT 00GÜ277 T r - 3 ?~/3 HERMETIC ISOLATED COMMERCIAL AND HI-REL MILITARY N-CHANNEL MOSFETS INPUT CAPAC­ ITANCE CISS PF POW ER DISSI­ PATION PD(MAX) (WATTS) NOTES 12.0 880 125 1 5.0 20.0 880 125 1 1.20 6.5


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    PDF APT4055GN APT1002RCN APT1003R5CN APT801R2CN APT802RCN APT6060CN APT601R2CN APT5040CN APT5085CN APT4030CN