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    APT6030BN Search Results

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    Microchip Technology Inc APT6030BN

    MOSFET N-CH 600V 23A TO247AD
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    APT6030BN Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT6030BN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT6030BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 23A TO247AD Original PDF
    APT6030BN Advanced Power Technology N-Channel Enhancement Mode High Voltage Power MOSFET Scan PDF
    APT6030BNR Advanced Power Technology High Voltage Power MOSFETs Scan PDF

    APT6030BN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT6030BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)92 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)360 Minimum Operating Temp (øC)-55õ


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    PDF APT6030BN Junc-Case340m

    Untitled

    Abstract: No abstract text available
    Text: APT6030BNR Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310 Minimum Operating Temp (øC)


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    PDF APT6030BNR

    6030bn

    Abstract: APT6030BN APT6033BN
    Text: D TO-247 G S POWER MOS IV APT6030BN 600V 23.0A 0.30Ω APT6033BN 600V 22.0A 0.33Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


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    PDF O-247 APT6030BN APT6033BN 6030BN 6033BN O-247AD 6030bn

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED W ZA P o w er Te c h n o lo g y APT6030BNR APT6033BNR GFvvER MOS l'Tiä 600V 23.0A 0.30i> 600V 22.0A 0.3312 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT6030BNR APT6033BNR APT6033BNR APT6030/6033BNR O-247AD

    DLS FT 031

    Abstract: TL 084L APT6030BNR 25CC APT6033BNR
    Text: A d van ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR Ô S POWER MOS IV® 600V 23.0A 0.30U 600V 22.0A 0.33Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.


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    PDF APT6030BNR APT6033BNR APT603Q/6033BNR O-247AD 0001S1S DLS FT 031 TL 084L 25CC

    APT6030BNR

    Abstract: No abstract text available
    Text: A d va n ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR O s 600V 23.0A 0.3012 600V 22.0A 0.33Ü POWER MOS IVe UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V OSS D Continuous Drain Current @ Tc V V Parameter


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    PDF APT6030BNR APT6033BNR APT6033BNR MIL-STD-750 O-247AD

    diode U3d

    Abstract: LM 7801 6030BNR diode U3d on DLS FT 031 APT6030BNR APT6033BNR 040 U3D u3d diode
    Text: O D O S ADVANCED PO W ER Te c h n o l o g y APT6030BNR APT6033BNR POWER MOS IVe 600V 23.0A 0.30Í2 600V 22.0A 0.33Í2 AVALANCHE RATED N-C HA N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol All Ratings: T c = 2 5 °C unless otherwise specified.


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    PDF APT6030BNR APT6033BNR O-247AD diode U3d LM 7801 6030BNR diode U3d on DLS FT 031 040 U3D u3d diode

    APT802R4KN

    Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
    Text: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN


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    PDF APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5040BN APT802R4KN APT6018LNR APT6060BN mosfet selector guide APT-6018 APT10M25bnfr k 3530 MOSFET 1r3b

    D 92 M - 03 DIODE

    Abstract: 6030bn
    Text: A dvanced P ow er Te c h n o l o g y O D O APT6030BN 600V 23.0A 0.30CÌ APT6033BN 600V 22.0A 0.33ÍÍ S _ ^ _ GB WER MOS \V® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN


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    PDF APT6030BN APT6033BN 6030BN 6033BN APT6030/6033BN O-247AD D 92 M - 03 DIODE

    6030BN

    Abstract: 6033BN lr 2905 z DLS FT 031 APT6030BN APT6033BN
    Text: A d v a n ced P o w er Te c h n o l o g y * O D O S POWER MOS IV APT6030BN 600V 23.0A 0.300 APT6033BN 600V 22.0A 0.33Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT


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    PDF APT6030BN APT6033BN 6030BN 6033BN Numb12, O-247AD lr 2905 z DLS FT 031

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y 8 O D O S POWER MOS IV APT6030BN 600V 23.0A 0.30Q APT6033BN 600V 22.0A 0.330 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT


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    PDF APT6030BN APT6033BN 6030BN 6033BN O-247AD APT6030/6033BN

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® APT6030BN 600V 23.0A 0.30Í1 APT6033BN 600V 22.0A 0.33Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified. APT


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    PDF APT6030BN APT6033BN 6030BN 6033BN APT6030/6033BN O-247AD

    APT*1002R4BN

    Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
    Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0


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    PDF O-247 APT1001RBN APT1001R1BN APT1001RBNR APT1001R1BNR APT1001R3BN APT1001R6BN APT1002RBN APT1002R4BN APT1002RBNR APT*1002R4BN APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF

    APT5085BN

    Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
    Text: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =


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    PDF 0000fci3c? O-247 APT4020BNR APT4025BNR APT4030BNR APT4040BNR APT4065BNR APT4080BNR APT5020BNR APT5022BNR APT5085BN APT4065BN APT6045BNR APT5027BN APT501R1BN