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    AS4C1M16F5-60JC

    Abstract: AS4C1M16F5-60JI AS4C1M16F5 AS4C1M16F5-60tc
    Text: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16E0-60)


    Original     		PDF AS4C1M16F5 AS4C1M16E0-60) 42-pin 44/50-pin AS4C1M16F5 42-pin AS4C1M16F5-50JC AS4C1M16F5-50JI AS4C1M16F5-60JC AS4C1M16F5-60JI AS4C1M16F5-60JC AS4C1M16F5-60JI AS4C1M16F5-60tc

    1m16e

    Abstract: No abstract text available
    Text: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16E0-60)


    Original     		PDF AS4C1M16F5 AS4C1M16E0-60) 42-pin 44/50-pin AS4C1M16F5 AS4C1M16F5-50JC AS4C1M16F5-50JI AS4C1M16F5-50TC 1m16e

    Untitled

    Abstract: No abstract text available
    Text: 3UHOLPLQDU\LQIRUPDWLRQ $6&0  90ð&026'5$0 IDVWSDJHPRGH )HDWXUHV • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ


    Original     		PDF 42-pin 44/50-pin AS4C1M16E0-60) AS4C1M16F5-50JC AS4C1M16F5-50JI AS4C1M16F5-50TC AS4C1M16F5-50TI AS4C1M16F5-60JC

    Untitled

    Abstract: No abstract text available
    Text: H igh Performance 1MX16 CMOS DRAM •■ II AS4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0


    OCR Scan     		PDF 1MX16 AS4C1M16E0 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) AS4LC1M16E0 AS4LC1M16EO-70JC 42-pm 1M16E0

    4lc4m4e0

    Abstract: No abstract text available
    Text: H i ” li P e r l o m i a i H r •■ \S4 4M 4H II AS4I C 4 M 4 I 0 Jl A 4M X4 CMOSDRAM t M x 4 C M O S I.IH) DRAM Advance information Features • TTL-compatible, three-state I/O • JEDEC standard package • Organization: 4,194,304 words x 4 bits • High speed


    OCR Scan     		PDF /30/3S 24/26-pin 24-pin 4lc4m4e0

    T835

    Abstract: No abstract text available
    Text: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e


    OCR Scan     		PDF AS4C1M16E0 AS4LC1M16E0 16E0-60JC I6E0-60JC 42-pin 16E0-70JC IM16E0 T835

    4LC1M16

    Abstract: 4C1M16 AS4CIM16 IS3015
    Text: H ig h P e r fo r m a n c e 1 M X 16 CM OS DRAM A S 4 C 1 M I6 E 0 A S 4 L C I M 1 6EÓ 1M X J 6 CM OS EDO DRAM Prelim inary inform ation Features • R ead-m odify-w rite • TTL-com patible, three-state I /O • JEDEC standard package and pin o u t - 400 mil, 42-pin SOJ


    OCR Scan     		PDF 4C1M16EO-SO) 42-pin 4C1M16E0) I/015 eiOG3441 AS4C1M16E0 AS4LC1M16E0 AS4C1M16E0-60JC 4LC1M16 4C1M16 AS4CIM16 IS3015

    Untitled

    Abstract: No abstract text available
    Text: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0


    OCR Scan     		PDF AS4LC1M16EÃ 42-pin 4C1M16EO-SO)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS4C1M 16F5 A 5V 1M x 16 C M O S DRAM fast page mode Features • 1024 refresh cycles, 16 m s refresh interval • O rganization: 1,048 ,5 7 6 w ords x 16 bits • H igh speed - KAS-only or CAS-before-KAS refresh • R ead-m odify-w rite


    OCR Scan     		PDF 42-pin 44/50-pin AS4C1M16E0-60) AS4C1M16F5-50JC AS4C1M16F5-50JI AS4C1M16F5-60JC AS4C1M16F5-60JI 44/50-pin AS4C1M16F5-50TC AS4C1M16F5-50TI

    3d graphics

    Abstract: No abstract text available
    Text: H .irl lisi ¡ i l ” \ l | l i i i l ) l i ( ni pur l l i s ! i i uj Product number Product density/description . Page number AS29F010 128Kx 8 equal sector Flash. 237


    OCR Scan     		PDF AS29F010 AS29F002 AS29F200 AS29F040 AS29F400 AS4C14400 AS4CI4405 AS4C1M16E0 AS4LC1M16E0 AS7C1024 3d graphics

    4C1M16

    Abstract: 1MX16 4LC1M16
    Text: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout


    OCR Scan     		PDF 1MX16 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) 6E0-50 4C1M16E0-60 6E0-70 AS4C1M16E0 4C1M16 4LC1M16