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    SEMISOUTH

    Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
    Text: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		PDF ASJD1200R085 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R085 O-247 ASJD1200R085 SEMISOUTH JFET semisouth SiC JFET semisouth JFET

    ASJD1200R085

    Abstract: SiC JFET SJDP120R085 JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085
    Text: ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		PDF ASJD1200R085 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R085 O-247 ASJD1200R085 SiC JFET JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085

    SEMISOUTH

    Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
    Text: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC


    Original     		PDF -55oC 200oC 260oC* MIL-PRF-19500 O-257) O-257 SEMISOUTH 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045