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    Infineon Technologies AG BAR6404WH6327XTSA1

    RF DIODE PIN 150V 250MW SOT323-3
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    DigiKey BAR6404WH6327XTSA1 Cut Tape 28,241 1
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    Infineon Technologies AG BAR6402VH6327XTSA1

    RF DIODE PIN 150V 250MW SC79-2
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    DigiKey BAR6402VH6327XTSA1 Cut Tape 15,918 1
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    BAR6402VH6327XTSA1 Ammo Pack 16 Weeks, 3 Days 1
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    Mouser Electronics BAR6402VH6327XTSA1 104
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    Arrow Electronics BAR6402VH6327XTSA1 12,000 4 Weeks 3,000
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    TME BAR6402VH6327XTSA1 2,395 5
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    BAR6402VH6327XTSA1 2,010 1
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    Vishay Semiconductors BAR64-05W-E3-08

    RF PIN DIODE 100V DUAL CC SOT323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAR64-05W-E3-08 Reel 15,000 3,000
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    Infineon Technologies AG BAR6406E6327HTSA1

    RF DIODE PIN 150V 250MW SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAR6406E6327HTSA1 Cut Tape 6,923 1
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    Infineon Technologies AG BAR6403WE6327HTSA1

    RF DIODE PIN 150V 250MW SOD323-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAR6403WE6327HTSA1 Cut Tape 4,473 1
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    Mouser Electronics BAR6403WE6327HTSA1 7,761
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    Rochester Electronics BAR6403WE6327HTSA1 88,705 1
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    Find more BAR64 price and stock on Findchips.com

    BAR64 Datasheets (181)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAR64 Infineon Technologies DIODE PIN ATTENUATOR/SWITCH 200V 3SOT-23 Original PDF
    BAR64 Infineon Technologies PIN Diode for RF switches (high isolation) Original PDF
    BAR64 Kexin Silicon PIN Diode Original PDF
    BAR64 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BAR64 Siemens Cross Reference Guide 1998 Original PDF
    BAR64 Siemens Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) Original PDF
    BAR64 TY Semiconductor Silicon PIN Diode - SOT-23 Original PDF
    BAR64 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAR64-02 Siemens Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) Original PDF
    BAR6402ELE6327XTMA1 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE RF SGL 150V 100MA TSLP2-7 Original PDF
    BAR64-02L Infineon Technologies Diode for RX-TX Switches Original PDF
    BAR64-02L Infineon Technologies DIODE PIN ATTENUATOR/SWITCH 150V 2TSLP-2-1 Original PDF
    BAR64-02L Infineon Technologies Silicon PIN Diode Original PDF
    BAR6402LE6327 Infineon Technologies DIODE PIN ATTENUATOR/SWITCH 150V 2TSLP-2 T/R Original PDF
    BAR64-02LE6433 Infineon Technologies DIODE PIN ATTENUATOR/SWITCH 150V 2TSLP-2-1 Original PDF
    BAR64-02LRH Infineon Technologies Antenna Switch; Package: PG-TSLP-2; IF (max): 100.0 mA; CT (max): 0.35 pF; rF (typ): 2.1 Ohm; Trr (typ): 1,550.0 ns; Configuration: Single; Original PDF
    BAR64-02LRH Infineon Technologies DIODE PIN ATTENUATOR/SWITCH 150V 2TSLP-2-7 Original PDF
    BAR64-02LRHE6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE RF SGL 150V 100MA TSLP2-7 Original PDF
    BAR6402LRHE6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - RF - DIODE RF SGL 150V 100MA TSLP2-7 Original PDF
    BAR64-02LRHE6433 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE RF SGL 150V 100MA TSLP2-7 Original PDF
    ...

    BAR64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification BAR64-02W SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 Features +0.05 0.8-0.05 High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz + +0.1 0.6-0.1 - Low resistance and short carrier lifetime


    Original     		PDF BAR64-02W OD-523 77max 07max

    BAR64V-04

    Abstract: BAR64V-04-GS08 BAR64V-04-GS18
    Text: BAR64V-04 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-04 OT-23 BAR64V-04 OT-23 D-74025 08-Jul-04 BAR64V-04-GS08 BAR64V-04-GS18

    BAR64V-05

    Abstract: BAR64V-05-GS08 BAR64V-05-GS18
    Text: BAR64V-05 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-05 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-05 OT-23 BAR64V-05 OT-23 D-74025 08-Jul-04 BAR64V-05-GS08 BAR64V-05-GS18

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-05W-V Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance RF can be


    Original     		PDF BAR64V-05W-V OT323 BAR64V-05W-V 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-05W-V Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance RF can be


    Original     		PDF BAR64V-05W-V OT323 BAR64V-05W-V OT323 GS18/10 GS08lectual 18-Jul-08

    BAR64V-04W

    Abstract: BAR64V-04W-GS08 BAR64V-04W-GS18 BYT41A BYT41M
    Text: BAR64V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-04W OT-323 BAR64V-04W OT-323 18-Jul-08 BAR64V-04W-GS08 BAR64V-04W-GS18 BYT41A BYT41M

    SMD 02W

    Abstract: BAR64-02W SCD80
    Text: BAR64-02W Silicon PIN Diode  High voltage current controlled 2 RF resistor for RF attenuator and switches  Frequency range above 1 MHz up to 3 GHz  Low resistance and long carrier lifetime  Very low capacitance at zero volts reverse 1 bias at frequencies above 1 GHz


    Original     		PDF BAR64-02W VES05991 SCD80 Aug-28-2001 100MHz 900MHz 1800MHz SMD 02W BAR64-02W SCD80

    VPS05604

    Abstract: BAR64-04S
    Text: BAR64-04S 4 Silicon PIN Diode 5 6 Preliminary data  High voltage current controlled RF resistor for RF attenuator and switches  Frequency range above 1MHz up to 3 GHz 2  Low resistance and long carrier life time 3 1 VPS05604  Very low capacitance at zero volts reverse


    Original     		PDF BAR64-04S VPS05604 EHA07464 OT363 Aug-28-2001 100MHz 900MHz 1800MHz VPS05604 BAR64-04S

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-04W OT-323 BAR64V-04W 2002/95/EC 2002/96/EC D-74025 15-Apr-05

    18342

    Abstract: No abstract text available
    Text: BAR64V-06W Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-06W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-06W OT-323 BAR64V-06W 2002/95/EC 2002/96/EC D-74025 15-Apr-05 18342

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-06 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-06 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-06 OT-23 BAR64V-06 D-74025 12-Sep-03

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-06W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-06W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-06W OT-323 BAR64V-06W D-74025 02-Mar-04

    d3marking

    Abstract: sot-23 DIODE marking code D3
    Text: BAR64V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-03 OT-23 BAR64V-03 D-74025 12-Dec-03 d3marking sot-23 DIODE marking code D3

    BAR64V-06

    Abstract: BAR64V-06-GS08 BAR64V-06-GS18
    Text: BAR64V-06 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-23 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-06 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-06 OT-23 BAR64V-06 OT-23) D-74025 26-Apr-04 BAR64V-06-GS08 BAR64V-06-GS18

    BAR64V-04W

    Abstract: BAR64V-04W-GS08 BAR64V-04W-GS18
    Text: BAR64V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-04W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-04W OT-323 BAR64V-04W OT-323) D-74025 26-Apr-04 BAR64V-04W-GS08 BAR64V-04W-GS18

    BAR64V-06

    Abstract: BAR64V-06-GS08 BAR64V-06-GS18
    Text: BAR64V-06 Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-06 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-06 OT-23 BAR64V-06 OT-23 08-Apr-05 BAR64V-06-GS08 BAR64V-06-GS18

    BAR64

    Abstract: BAR64-04 bar64-05 smd rf transistor marking BAR64-06 Marking POs prs smd
    Text: Diodes SMD Type Silicon PIN Diode BAR64;BAR64-04 BAR64-05;BAR64-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 RF resistor for RF attenuator and swirches 0.55 High voltage current controlled 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF BAR64 BAR64-04 BAR64-05 BAR64-06 OT-23 BAR64 BAR64-04 smd rf transistor marking BAR64-06 Marking POs prs smd

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-05W-V www.vishay.com Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 FEATURES • High voltage current controlled RF resistor 3 • Small diode capacitance • Low series inductance • Low forward resistance • Improved performance due to two separate dice


    Original     		PDF BAR64V-05W-V OT-323 BAR64V-05W-V 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    transistor 18381

    Abstract: BAR64V-06W BAR64V-06W-GS08 BAR64V-06W-GS18
    Text: BAR64V-06W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-06W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-06W OT-323 BAR64V-06W OT-323) D-74025 26-Apr-04 transistor 18381 BAR64V-06W-GS08 BAR64V-06W-GS18

    Untitled

    Abstract: No abstract text available
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


    Original     		PDF BAR64. Q1011) BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-02LRH*

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-03W OT-323 BAR64V-03W D-74025 17-Sep-03

    1833

    Abstract: 1-8256
    Text: BAR64V-04 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-04 OT-23 BAR64V-04 D-74025 12-Dec-03 1833 1-8256

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


    Original     		PDF BAR64V-03 OT-23 BAR64V-03 2002/95/EC 2002/96/EC OT-23 D-74025 15-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 64-07 Silicon PIN Diode • • • • High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz Low resistance and short carrier lifetime For frequencies up to 3 GHz Type BAR64-07 Marking PTs Ordering Code


    OCR Scan     		PDF BAR64-07 Q62702-A1044 OT-143