BC817A
Abstract: BC807A
Text: BC817A BC817A Silicon NPN Epitaxial Transistor Description: The BC817A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
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BC817A
BC817A
BC807A
440um
440um
110um
110um
BC807A
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BC807A
Abstract: BC817A
Text: BC807A BC807A Silicon PNP Epitaxial Transistor Description: The BC807A is designed for audio frequency general amplifier applications. Features: ●Excellent hFE Linearity ●Complementary to BC817A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
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BC807A
BC807A
BC817A
440um
440um
110um
110um
BC817A
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BC807A
Abstract: No abstract text available
Text: SEMICONDUCTOR BC807A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L FEATURES L D ・Complementary to BC817A. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage
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BC807A
BC817A.
BC807A
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC807A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2009. 2. 19 Revision No : 2 1/2
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BC807A
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification KC807A BC807A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1
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KC807A
BC807A)
OT-23
KC807A-16
KC807A-25
KC807A-40
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BC807A-40
Abstract: 1P TRANSISTOR MARK BC807A BC817A
Text: SEMICONDUCTOR BC807A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L 3 H G A 2 D ・Complementary to BC817A. 1 MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage
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BC807A
BC817A.
BC807A-40
1P TRANSISTOR MARK
BC807A
BC817A
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KC807A-25
Abstract: 5C smd BC807A marking AF smd 5c KC807A-40 marking 5A
Text: Transistors SMD Type PNP Silicon AF Transistors KC807A BC807A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1
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KC807A
BC807A)
OT-23
KC807A-16
KC807A-25
KC807A-40
KC807A-25
5C smd
BC807A
marking AF
smd 5c
KC807A-40
marking 5A
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC807A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D Complementary to BC817A. H MAXIMUM RATING Ta=25 3 G A 2 1 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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BC807A
BC817A.
-500mA
-500mA,
-50mA
-10mA,
100MHz
BC807A-16
BC807A-25
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BC817A
Abstract: No abstract text available
Text: SEMICONDUCTOR BC817A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L FEATURES L D ・Complementary to BC807A. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage
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BC817A
BC807A.
BC817A
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BC807-25-AU
Abstract: No abstract text available
Text: BC807-AU SERIES PNP GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 330 mWatts FEATURES • General purpose amplifier applications 0.120 3.04 • PNP epitaxial silicon, planar design 0.110(2.80) • Collector current I C = 500mA • • • • Acqire quality system certificate : TS16949
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BC807-AU
500mA
TS16949
AECQ101
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
BC807-16-AU
BC807-25-AU
BC807-25-AU
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BC817A
Abstract: BC807A
Text: SEMICONDUCTOR BC817A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L H D 1 RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V
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BC817A
BC817A
BC807A
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Untitled
Abstract: No abstract text available
Text: BC807-AU SERIES PNP GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 330 mWatts FEATURES • General purpose amplifier applications 0.120 3.04 • PNP epitaxial silicon, planar design 0.110(2.80) • Collector current I C = 500mA • • • • Acqire quality system certificate : TS16949
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BC807-AU
500mA
TS16949
AEC-Q101
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
2011-REV
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC817A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L H MAXIMUM RATING Ta=25 D 3 G A 2 1 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage
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BC817A
100MHz
BC817A-16
BC817A-25
BC817A-40
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