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    BCR108S Price and Stock

    Infineon Technologies AG BCR108SE6327BTSA1

    TRANS 2NPN PREBIAS 0.25W SOT363
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    Infineon Technologies AG BCR108SH6327XTSA1

    TRANS 2NPN PREBIAS 0.25W SOT363
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    DigiKey BCR108SH6327XTSA1 Reel 18,000
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    Verical BCR108SH6327XTSA1 162,000 18,000
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    BCR108SH6327XTSA1 30,000 3,000
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    Arrow Electronics BCR108SH6327XTSA1 30,000 98 Weeks 3,000
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    BCR108SH6327XTSA1 Cut Strips 2 98 Weeks 1
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    EBV Elektronik BCR108SH6327XTSA1 53 Weeks 3,000
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    Win Source Electronics BCR108SH6327XTSA1 49,500
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    Infineon Technologies AG BCR108SE6433HTMA1

    TRANS 2NPN PREBIAS 0.25W SOT363
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    Infineon Technologies AG BCR108SH6433XTMA1

    TRANS 2NPN PREBIAS 0.25W SOT363
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    Infineon Technologies AG BCR108SH6327XT

    Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: BCR108SH6327XTSA1)
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    Avnet Americas BCR108SH6327XT Reel 18,000
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    Find more BCR108S price and stock on Findchips.com

    BCR108S Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCR108S Infineon Technologies NPN Silicon Digital Transistor Array Original PDF
    BCR108S Infineon Technologies SOT363 ICmax = 100mA Original PDF
    BCR108S Infineon Technologies Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V Original PDF
    BCR108S Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 6SOT-363 Original PDF
    BCR108S Infineon Technologies Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; R1 (typ): 2.2 kOhm; R2: 47.0 k?; hFE (min): 70.0; Vi (on) (min): 0.5 2mA / 0.3V; Original PDF
    BCR108S Siemens NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) Original PDF
    BCR108S Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BCR108SE6327 Infineon Technologies Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 Original PDF
    BCR108S E6327 Infineon Technologies Dual Built-in Resistor AF Transistors, 2xNPN, Industrial Standars Types, Icmax of 100mA, Vceo of 50V Original PDF
    BCR108SE6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 6SOT-363 T/R Original PDF
    BCR108SE6327 Infineon Technologies Digital Transistors - R1= 2,2 kOhm , R2= 47 kOhm SOT363 Original PDF
    BCR108SE6327BTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 Original PDF
    BCR108SE6433 Infineon Technologies Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 Original PDF
    BCR 108SE6433 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 6SOT-363 T/R Original PDF
    BCR108SE6433HTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 Original PDF
    BCR108SH6327 Infineon Technologies Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 Original PDF
    BCR108SH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 Original PDF
    BCR108SH6433 Infineon Technologies Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 Original PDF
    BCR108SH6433XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 Original PDF

    BCR108S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BCR108

    Abstract: BCR108F BCR108S BCR108W BCW66 bcr1
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108S BCR108W BCW66 bcr1 PDF

    marking WHs

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR108. BCR108S: BCR108 BCR108W BCR108S EHA07184 EHA07174 BCR108S marking WHs PDF

    BCR108S

    Abstract: VPS05604
    Text: BCR108S NPN Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated Transistors with good matching in one package  Built in bias resistor (R1=2.2k, R 2=47k) 2 3 1 VPS05604


    Original     		BCR108S VPS05604 EHA07174 OT363 Nov-29-2001 BCR108S VPS05604 PDF

    marking WHS sot23

    Abstract: transistor marking code whs
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3


    Original     		BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108L3 marking WHS sot23 transistor marking code whs PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F PDF

    BCR108S

    Abstract: VPS05604
    Text: BCR108S NPN Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated Transistors with good matching in one package  Built in bias resistor (R1=2.2k, R 2=47k) 2 3 1 VPS05604


    Original     		BCR108S VPS05604 EHA07174 OT363 Jul-12-2001 BCR108S VPS05604 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR108. BCR108S: BCR108 BCR108W BCR108S EHA07184 EHA07174 PDF

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W PDF

    bav99

    Abstract: BAV-99S-E6327 bav99 infineon
    Text: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W


    Original     		BAV99. BAV99S BAV99 BAV99W BAV99U BAV99U BAV-99S-E6327 bav99 infineon PDF

    sot23 s1a marking

    Abstract: marking code S1A sot23
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 sot23 s1a marking marking code S1A sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S : Two internally isolated transistors with good matching in one multichip package • BCR141S: For orientation in reel see


    Original     		BCR141. BCR141S BCR141S: BCR141 BCR141W EHA07184 EHA07174 BCR141S PDF

    MARKING CODE CCB

    Abstract: BC847S
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S PDF

    BAS16

    Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
    Text: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U


    Original     		BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W PDF

    BAT62

    Abstract: BAT62-02L BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S SCD80
    Text: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-09S 6 4 3 1 D 1 2 2 1 D 2 D 1 D 2 2 4 5 D 2 D 1 1 BAT62-07W BAT62-07L4 1 2 3 ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BAT62. BAT62 BAT62-02L BAT62-02W BAT62-03W BAT62-09S BAT62-07W BAT62-07L4 BAT62 BAT62-02L BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S SCD80 PDF

    NPN marking MCs

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ marking 4B2 BCR108S BFS17S
    Text: BFS17S NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at 4 5 6 collector currents from 1 mA to 20 mA • BFS17S: For orientation in reel see 1 2 3 package information below • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		BFS17S BFS17S: OT363 NPN marking MCs RF NPN POWER TRANSISTOR C 10-12 GHZ marking 4B2 BCR108S BFS17S PDF

    BCR133

    Abstract: infineon marking code B2 SOT23 TRANSISTOR MARKING CODE TP infineon marking code E1 sot23 BCR133S BCR108S BCR108W BCR133W BCW66 102c marking
    Text: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package


    Original     		BCR133. BCR133S: BCR133/W BCR133S EHA07184 EHA07174 BCR133 OT363 BCR133 infineon marking code B2 SOT23 TRANSISTOR MARKING CODE TP infineon marking code E1 sot23 BCR133S BCR108S BCR108W BCR133W BCW66 102c marking PDF

    BCR135

    Abstract: BCR108W BCR135F BCR135S BCR135W BCW66
    Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see


    Original     		BCR135. BCR135S: BCR135/F BCR135W BCR135S EHA07184 EHA07174 BCR135 BCR135F BCR135 BCR108W BCR135F BCR135S BCR135W BCW66 PDF

    BAS170W

    Abstract: BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04
    Text: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)


    Original     		BAS70. /BAS170W BAS70-04S: BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04 PDF

    BCR15PN

    Abstract: infineon marking W1s BCR108S E6327 VPS05604 marking code w1s
    Text: BCR15PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) 2 3 1 VPS05604


    Original     		BCR15PN VPS05604 OT-363 EHA07193 EHA07176 OT363 BCR15PN infineon marking W1s BCR108S E6327 VPS05604 marking code w1s PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR119. NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7 kΩ • BCR119S: Two internally isolated transistors with good matching in one multichip package • BCR119S: For orientation in reel see


    Original     		BCR119. BCR119S: BCR119/F/W BCR119S EHA07264 EHA07265 BCR119 BCR119F PDF

    Untitled

    Abstract: No abstract text available
    Text: BG5412K Dual N-Channel MOSFET Tetrode • Designed for input stages of 2 band tuners 4 5 6 • Two AGC amplifiers in one single package, with on-chip internal switch 1 2 3 • Only one switching line to control both FETs • Integrated gate protection diodes


    Original     		BG5412K OT363 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see


    Original     		BCR135. BCR135S: BCR135/F BCR135W BCR135S EHA07184 EHA07174 BCR135 BCR135F PDF

    Sot-363 whs

    Abstract: marking code WHs
    Text: SIEMENS BCR108S NPN Silicon D igital Transistor Array • Switching circuit, inverter, interface circuit, 4 5_ _ driver circuit • Two galvanic internal isolated Transistors in on package » Built in bias resistor (R1=2.2kß, R2=47k£i) 3 2 1 BCR108S WHs


    OCR Scan     		BCR108S VPS05604 Q62702-C2414 OT-363 Sot-363 whs marking code WHs PDF