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    Rochester Electronics LLC BD1396STU

    TRANS NPN 80V 1.5A TO-126-3
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    DigiKey BD1396STU Bulk 23,124 1,480
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    BD1396STU Bulk 2,277 1,480
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    onsemi BD139G

    TRANS NPN 80V 1.5A TO-126
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    DigiKey BD139G Bulk 11,126 1
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    Avnet Americas BD139G Bulk 8 Weeks, 4 Days 1
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    BD139G Bulk 10 Weeks 3,000
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    Mouser Electronics BD139G 2,923
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    onsemi BD13916STU

    TRANS NPN 80V 1.5A TO-126-3
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    DigiKey BD13916STU Tube 7,434 1
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    Avnet Americas BD13916STU Bulk 16 Weeks, 4 Days 1
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    BD13916STU Tube 8 Weeks 3,840
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    Mouser Electronics BD13916STU 5,296
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    Newark BD13916STU Bulk 1,907 1
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    Onlinecomponents.com BD13916STU 8,600
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    Rochester Electronics BD13916STU 94,748 1
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    Avnet Silica BD13916STU 1,920 9 Weeks 1,920
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    Rochester Electronics LLC BD13910S

    TRANS NPN 80V 1.5A TO-126-3
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    DigiKey BD13910S Bulk 5,694 1,219
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    STMicroelectronics BD139-10

    TRANS NPN 80V 1.5A SOT-32
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    DigiKey BD139-10 Tube 5,448 1
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    Avnet Americas BD139-10 Tube 14 Weeks 6,000
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    Avnet Silica BD139-10 27,600 15 Weeks 50
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    Find more BD139 price and stock on Findchips.com

    BD139 Datasheets (121)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    BD139 Central Semiconductor Leaded Power Transistor General Purpose Original PDF
    BD139 Fairchild Semiconductor NPN Epitaxial Silicon Transistor - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
    BD139 Motorola Plastic Medium Power Silicon NPN Transistor - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
    BD139 On Semiconductor Plastic Medium Power Silicon NPN Transistor Original PDF
    BD139 Philips Semiconductors NPN POWER TRANSISTORS - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
    BD139 Philips Semiconductors NPN power transistors - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
    BD139 Philips Semiconductors NPN GENERAL PURPOSE POWER TRANSISTORS Original PDF
    BD139 Philips Semiconductors Silicon Planar Epitaxial Power Transistors Original PDF
    BD139 Siemens Cross Reference Guide 1998 Original PDF
    BD139 STMicroelectronics Complementary low voltage transistor Original PDF
    BD139 STMicroelectronics NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
    BD139 Various Russian Datasheets Transistor Original PDF
    BD139 Continental Device India NPN Plastic Power Transistor Scan PDF
    BD139 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BD139 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    BD139 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    BD139 Motorola Motorola Transistor Datasheets Scan PDF
    BD139 Motorola The European Selection Data Book 1976 Scan PDF
    BD139 Motorola European Master Selection Guide 1986 Scan PDF
    BD139 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    ...

    BD139 Datasheets Context Search

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    bd139

    Abstract: BD135 BD137 bd139 140 BD139 circuits bd139 Complement BD139 silicon transistors BD135-10 BD135-16 BD139-10
    Text: SavantIC Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High current ·Complement to type BD136/138/140 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits


    Original     		BD135 BD137 BD139 O-126 BD136/138/140 BD135 BD137 bd139 bd139 140 BD139 circuits bd139 Complement BD139 silicon transistors BD135-10 BD135-16 BD139-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol Value BD135T BD137T BD139T Unit Collector Emitter Voltage


    Original     		BD135T BD137T BD139T O-126 BD135T BD137T PDF

    BD139

    Abstract: BD139 N bd137 BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
    Text: MCC BD135 BD137 BD139   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD139 N BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: r 7 z S G S - m O M S O BD135 BD137/BD139 N Ä T # [MO gfô l[L[iera®*S NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers


    OCR Scan     		BD135 BD137/BD139 BD135, BD137 BD139 OT-32 BD136 BD138 BD140. BD135/ PDF

    bd139

    Abstract: M/triac bd139 bd135
    Text: BD135 BD139 NPN SILICON TRANSISTORS • STMicraelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi


    OCR Scan     		BD135 BD139 BD135 BD139 OT-32 BD136 BD140 BD135/ M/triac bd139 PDF

    transistor BD139 N

    Abstract: power transistor bd139 BD139 amplifier BD139 BD139 N TRANSISTOR NPN BD139 BD137-16 to126 case BD135-10 BD137-10
    Text: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted


    Original     		BD135 BD137 BD139 O-126 BD135, BD137, BD139 Tmb70 transistor BD139 N power transistor bd139 BD139 amplifier BD139 N TRANSISTOR NPN BD139 BD137-16 to126 case BD135-10 BD137-10 PDF

    CDIL BD139

    Abstract: CDIL BD137 bd139 140 BD135 CDIL BD137 parameters bd135 BD136 mw 137 BD137 BD139
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-126 SOT-32 Plastic Package BD135, 137, 139 BD135, BD137, BD139 NPN PLASTIC POWER TRANSISTORS Complementary BD136, 138, 140


    Original     		O-126 OT-32) BD135, BD137, BD139 BD136, C-120 CDIL BD139 CDIL BD137 bd139 140 BD135 CDIL BD137 parameters bd135 BD136 mw 137 BD137 BD139 PDF

    philips power transistor bd139

    Abstract: BD139 N bd139 application note BD139 philips BD135 philips BD140 npn power transistor bd139 TRANSISTOR BD139 TRANSISTOR NPN BD139 TRANSISTOR NPN BD140
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES


    Original     		M3D100 BD135; BD137; BD139 O-126; BD136, BD138 philips power transistor bd139 BD139 N bd139 application note BD139 philips BD135 philips BD140 npn power transistor bd139 TRANSISTOR BD139 TRANSISTOR NPN BD139 TRANSISTOR NPN BD140 PDF

    BD139 application

    Abstract: BD139 N bd139 BD135 BD139 p of bd139 bd135 N BD139-25 BD136
    Text: MCC BD135 BD137 BD139   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD139 application BD139 N BD139 p of bd139 bd135 N BD139-25 BD136 PDF

    bd139

    Abstract: BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136 bd137
    Text: MCC BD135 BD137 BD139   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136 PDF

    BD139H

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. D C E F G H DIM A B C D E F G H J K L M N O P J


    Original     		40Min. BD140. BD139 BD139H PDF

    transistor BD 141

    Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram
    Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features


    Original     		BD135, BD137, BD139 BD139 BD135 BD137 transistor BD 141 BD139G bd139 140 BD139-25 BD139 NPN transistor operation of BD 139 bd135 diagram PDF

    BD139 N

    Abstract: BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd139 power transistor bd137
    Text: BD135 BD137 BD139 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 N BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd139 power transistor bd137 PDF

    BD139 N

    Abstract: TRANSISTOR TC 137 BD135 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139
    Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Base Voltage :B D 1 3 5 : BD137 : BD139 C ollector E m itter V o lta g e : BD135


    OCR Scan     		BD135/137/139 BD136, BD138 BD140 BD135 BD137 BD139 BD139 N TRANSISTOR TC 137 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139 PDF

    BD139 N

    Abstract: BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 p BD139 silicon transistors
    Text: MCC BD135 BD137 BD139   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140


    Original     		BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 N BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 p BD139 silicon transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: r Z 7 S G S -T H O M S O N ^ 7 # 5MŒ HHi TT!FM0©S BD135 B D137-BD139 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD135, BD137, BD139 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-126 plastic package, designed for audio amplifiers and drivers


    OCR Scan     		BD135 D137-BD139 BD135, BD137, BD139 O-126 BD136, BD138 BD140 BD135Voltage PDF

    BD135

    Abstract: BD135 BD137 BD139
    Text: BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 2Collector 3Base CLASSIFICATION OF hFE 1


    Original     		BD135 BD137 BD139 O-126 BD136, BD138 BD140 BD135-6 BD135-10 BD135-16 BD135 BD137 BD139 PDF

    bd139 pin out

    Abstract: BD139 application BD139 N BD139 bd135 n power transistor bd139 bd140
    Text: MCC BD135 BD137 BD139   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components  HDWXUHV • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information)


    Original     		BD135 BD137 BD139 150mAdc BD136, BD138, BD140 bd139 pin out BD139 application BD139 N BD139 bd135 n power transistor bd139 bd140 PDF

    BD139

    Abstract: BD139-10 bd140-10
    Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed


    Original     		BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD139-10 bd140-10 PDF

    BD135,BD137,BD139

    Abstract: BD139 TRANSISTOR NPN BD139 BD139 amplifier BD139 NPN rBE BD135 BD135 BD137
    Text: BD135, BD137, BD139 NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol BD135 BD137 BD139 Unit Collector Emitter Voltage


    Original     		BD135, BD137, BD139 O-126 BD135 BD137 BD135 BD137 BD135,BD137,BD139 BD139 TRANSISTOR NPN BD139 BD139 amplifier BD139 NPN rBE BD135 PDF

    BD139-11

    Abstract: BD139 BD135C
    Text: BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS G eneral p u rp o s e n-p-n tra n s is to rs in S O T -3 2 p la s tic p a c k a g e , re c o m m e n d e d fo r d riv e r stages in h i-fi a m p lifie rs and te le v is io n c irc u its . T h e B D 1 3 6 , B D 1 3 8 and B D 1 4 0 are c o m p le m e n ta ry to th e B D 1 3 5 , B D 1 3 7 and B D 1 3 9 re s p e c tiv e ly .


    OCR Scan     		BD135 BD137 BD139 BD139-11 BD139 BD135C PDF

    BD139

    Abstract: BD137 philips power transistor bd139 BD135-BD137-BD139 BD139 philips BD139 PIN DATA BD137-10 BD135-10 BD139 circuits BD135-16
    Text: Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING • High current max. 1.5 A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base DESCRIPTION APPLICATIONS


    OCR Scan     		BD135; BD137; BD139 O-126; BD136, BD138 BD140. BD135 BD137 BD139 philips power transistor bd139 BD135-BD137-BD139 BD139 philips BD139 PIN DATA BD137-10 BD135-10 BD139 circuits BD135-16 PDF

    power transistor bd139

    Abstract: BD139 transistor BD139 amplifier power transistor bd137 transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139 BD139 power transistor bd135 BD139 NPN transistor download datasheet
    Text: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted


    Original     		BD135 BD137 BD139 O-126 BD135, BD137, BD139 CHARACTERISTI10 power transistor bd139 BD139 transistor BD139 amplifier power transistor bd137 transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139 power transistor bd135 BD139 NPN transistor download datasheet PDF

    Untitled

    Abstract: No abstract text available
    Text: BD139RS Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)1.0k V(BR)CBO (V)1.0k I(C) Max. (A)50 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)50


    Original     		BD139RS PDF