RF marking N02

Abstract: MBD7000 BD7000 MMBD2836 MMBD2838 MMBD7000 SOT23 5 MARKING N02 Tj-12 m5c3
Contextual Info: MM BD2836 / MM BD2838 M M B 1 7000 Surface Mount Switching Diode S W IT C H IN G D IO D E I00-200m A M P E R R E S 75-100 V O LT S Features: *Low Current Leakage *Low Forward Voltage ^Reverse Recover Time Trr<4ns *Small Outline Surface Mount SOT-23 Package

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itch in g D iodes MMBD2835LT1 BD2836LT1 CATHODE ANODE 3 o- - » -N - O 1 —O 2 % CATHODE 2 C A S E 318-08, S T Y L E 12 S O T - 23 T O -2 3 6 A B M A XIM U M R AT IN G S (EACH DIODE) Rating Reverse Voltage

MBAW56

Abstract: MBAV99 MBAV70 BD283 MMBD914X BD2838 BAV99M MBAS16 MMBD2837X bd2836
Contextual Info: 6 3 6 7 2 5 5 M O T O R O L A S C <D I O D E S / O PTO . DEÍt,3t,7HSS 0 0 b l ñ b 4 59C 618 64 MBAL99 MBAS16 MBAV70 MBAV74 MBAV99 MBAW56 □ M ) MOTOROLA SEM ICO N D U CTO RS P.O. BOX 20912 • PHOENIX, A R IZO N A 85036 0 7^3-0? MMBD914X MMBD2835X BD2836X

2SC9014

Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225

3D0 marking sot23

Abstract: MARKING CODE 7E VF M74 marking ir 1759 PMBD2835 PMBD2836 2835 diode marking 7E SOT-23 Diode
Contextual Info: • bLSBTBl 0DBS7TS S3fl ■ APX N AMER P H I L I P S / D I S C R E T E L.7E PMBD 2835 PMBD 2836 J> SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The P M B D 2835 and 283 6 consist of tw o diodes in a microminiature plastic envelope. The anodes are commoned and the unit is intended for high speed switching.