BD320C

Abstract: BCX21 BD323 TlPl22 2N6383 BD320 BD321 BD322 BDX33 BDX33A
Contextual Info: DARLINGTONS POWER DARLINGTON SELECTOR CHART T0-220 10A BDX TO-39 2A TO-39 A Package •c o w ÜÔ >> NPN TO-3 10A PNP 40 - - - - 2N6383 45 BCX21 - BDX33 BDX34 - 60 BD320 BD321 BDX33A BDX34A BD322 BD323 TIP120 TIP125 - BDX33B BDX34B TIP121 TIP126 BDX33C BDX34C

pnp darlington to-220 10a

Abstract: shockley diode TIP121 transistor BDX33d BD321 BD322 2N6383 BCX21 tip121 BD323
Contextual Info: DARLINGTONS POW ER DARLINGTO N SELEC TO R CH A R T T0-220 10A BDX TO-39 2A TO-39 A Package •c ow ÜÔ >> NPN TO-3 10A PNP 40 - - - - 2N6383 45 BCX21 - BDX33 BDX34 - 60 BD320 BD322 BD321 BD323 BDX33A TIP120 BDX34A TIP125 2N6384 - BDX33B TIP121 BDX34B TIP126

BD320C

Abstract: 2N3725 tip122 tip127 BD321A TlPl22 2N3261 2N3512 2N3724 BD320A BD320B
Contextual Info: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed fo r use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is o f prime importance.

BD320C

Abstract: BD321A 2N3261 2N3512 2N3724 2N3725 BD320A BD320B BSX59 BSX60
Contextual Info: CORE DRIVERS TABLE 10 - NPN SILICO N PLANAR HIGH SPEED CORE DRIVER T R A N SIST O R S The devices show n in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance.

2N3261

Abstract: 2N3512 2N3724 2N3725 BD320A BD320B BD320C BSX59 BSX60 BSX61
Contextual Info: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance.

transistor bd320c

Abstract: BD320C BD320B BD323B 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84
Contextual Info: NPN SWITCHING T A B LE 3 NPN SILICON PLANAR M ED IUM AND HIGH S P E E D SWITCHING T R A N S IS T O R S The devices show n in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and M ilitary equipments.

WIMA TFM

Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN

transistor bd320c

Abstract: 2N3261 BD320C 2N3512 2N3724 2N3725 BD320A BD320B BSX59 BSX60
Contextual Info: CORE DRIVERS TA B LE9 NPN SILICON PLANAR HIGH S P E E D C O R E D RIV ER T R A N S IST O R S The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime

BD320C

Abstract: 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89
Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICO N PLANAR M E D IU M A N D HIGH SPEED SW IT C H IN G T R A N S IS T O R S T h e d e v ice s s h o w n in this table are characterised for m edium and high speed sw itc h in g applications in C om m ercial, Industrial and M ilitary equipm ents.

BD320C pin

Abstract: VHF power TRANSISTOR PNP TO-39 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E transistor 2n2907 FF2483E
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium

Contextual Info: PLESSEY SEMICOND/DISCRETE I : 35 Dlf| 7550533 00017bS 3 j P L E S S E Y S E M I C O N D /D I S C R E T E 7220533 i 32C 0 1 7 6 5 2g ^-1 D CORE DRIVERS TA B LE 9 NPN SILICON PLANAR HIGH S P EED C O R E D RIVER TR A N SIST O R S The devices shown in this table are designed for use in fast, medium and high voltage, high

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BD267

Contextual Info: SEMELAB LTD 37E I fll331fl? 0000040 3 • S d L B I - 3 3 - 6 1 ^ 1 i tj j ■type No. SST' Package V q e o . cont ^FE VCE/>C PD BD262B BD263A BD263B BD266 BD267 PNP NPN NPN PNP NPN T0126 T0126 T0126 T0220 T0220 100 100 120 60 60 4 4 4 8 8 750rain 750min

2N3261

Abstract: 2N3512 2N3724 2N3725 BD320A BD320B BD320C BSX59 BSX60 BSX61
Contextual Info: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance.

BD320C

Abstract: BD323B BD323A 2N6385 BDX33 BDX33A BDX33B BDX33C BDX33D BDX34A
Contextual Info: DARLINGTONS TA B LE 5 - NPN and PN P SILICO N HIGH C U R R E N T D A RLIN G TO N T R A N S IS T O R S The devices shown in this table are designed for applications requiring very high current gain. The monolithic construction has the inherent advantages of fast switching times, low

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BD320C

Contextual Info: ZETEX SEMICONDUCTORS 32C » • T *170570 GGG17bS 1 BIZET B 32GÖ1765 D ' T 'T J - O / CORE DRIVERS T A BLE 9 N PN S IL IC O N P L A N A R H IG H S P E E D C O R E D R IV E R T R A N S IS T O R S The devices show n in this table are designed for use in fast, medium and high voltage, high

Contextual Info: SbE ]> • cn7DS?fl 0007003 007 ■ ZETB CORE DRIVERS ZETEX SEMICONDUCTORS TABLE 10 - NPN SILICON PLANAR HIGH SPEED CORE DRIVER T R A N SIST O R S The devices show n in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance.

Contextual Info: PLESSEY SE NIC ON D/ DI S CR E TE 7220533 PLESSEY TS Ï F | SEMICOND/DISCRETE 7 5 2 0 S 3 3 O O Cm S D 95D i ~ r~ J 04950 j- 3/ DARUNGTONS POWER DARLINGTON SELECTO R C H A R T Package lc TO -220 10A BDX) TO 39 2A TO-39 A V ceo Volts NPN TO-3 10A PNP 40 -

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

Contextual Info: PLESSEY SENICOND/DISCRETE T5 D E ^ 7E50533 □ □□4eJ2fl 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E 9SD 04928 D T - Z - ? - * 2-7 CORE DRIVERS TABLE 9 - N P N SILICO N PLANAR HIGH SPEED CORE DRIVER T R A N SIST O R S The devices shown in this table are designed for use in fast, medium and high voltage, high current core