BD947F Search Results

BD947F Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BD947F		Philips Semiconductors	Silicon Epitaxial Power Transistors		Original	PDF
BD947F		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BD947F		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
BD947F		Philips Semiconductors	Silicon Epitaxial Base Power Transistors		Scan	PDF

BD947F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BD947 Abstract: to-53 a/TO111 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .	Original	SDT3762 SDT3752 SDT1641 SDT3305 BD947 to-53 a/TO111	PDF
946f Abstract: No abstract text available Text: BD944F;946F BD948F PHILIPS INTERNATIONAL SbE » • 7110fl2b 00430^5 17T ■ P H I N r - 7 ? - ' / cr SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.	OCR Scan	BD944F BD948F 7110fl2b OT186 BD943F, BD945Fand BD947F. BD946F BD948F 946f	PDF
947f Abstract: No abstract text available Text: BD943F; BD945F BD947F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT 186 envelope w ith an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F. QUICK REFERENCE DATA BD943F 94SF 947F	OCR Scan	BD943F; BD945F BD947F BD944F, BD946Fand BD948F. BD943F 947f	PDF
Untitled Abstract: No abstract text available Text: BD944F;946F BD948F J V SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F. QUICK REFERENCE DATA BD944F BD946F BD948F	OCR Scan	BD944F BD948F BD943F, BD945Fand BD947F. BD944F BD946F OT186.	PDF
BD947F Abstract: BD948F BD943F BD944F BD946F 948F Text: BD944F; 946F BD948F PHILIPS INTERNAT IO NAL SbE D • 7110fl2b 0043CHB 17T « P H I N T - 7 ? *f SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.	OCR Scan	BD944F BD948F 7110fl2b 0043CHB OT186 BD943F, BD945Fand BD947F. BD946F BD947F BD948F BD943F 948F	PDF
946f Abstract: BD944F 948F BD947F BD943F BD946F BD948F Text: BD944F; 946F BD948F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F. QUICK REFERENCE DATA BD944F BD946F BD948F	OCR Scan	BD944F; BD948F BD943F, BD945Fand BD947F. bd944f bd946f 7Z21MO 003ms5^ 946f 948F BD947F BD943F BD948F	PDF
B0947 Abstract: 947f BD944F BD943 transistor d 947f BD943F BD945F BD947F BD948F 7Z95293 Text: BD943F; BD945F BD947F PHILIPS INTERNATIONAL 5fc,E ] • 7110fi5b DCm3ID7fl ÔTT M P H I N T - 3 3 ' 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, eachina S O T 186 envelope w ith an electrically insulated mounting base. PNP complements are B D 9 4 4 F , BD946Fand B D 948F.	OCR Scan	BD943F; BD945F BD947F 7110fi2b OT186 BD944F, BD946Fand BD948F. BD943F T-33-09 B0947 947f BD944F BD943 transistor d 947f BD947F BD948F 7Z95293	PDF
2222C Abstract: BD944 945F Text: BD943F; BD945F BD947F PHILIPS INT ER NATIONAL 5fc,E ] • 711D02b D O ^ O T A fiTT M P H I N T -S l'O l SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F.	OCR Scan	BD943F; BD945F BD947F 711D02b BD944F, BD946Fand BD948F. BD943F QQ43QA1 T-33-09 2222C BD944 945F	PDF
BD947F Abstract: BD943F BD943 BD944F BD945F BD948F Text: BD943F; BD945F BD947F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a S0T186 envelope w ith an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F. QUICK REFERENCE DATA BD943F 948F 947F	OCR Scan	BD943F; BD945F BD947F S0T186 BD944F, BD946Fand BD948F. BD943F 0034S47 BD947F BD943 BD944F BD945F BD948F	PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF