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    BD950F Search Results

    BD950F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD950F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BD950F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD950F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BD950F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD954F

    Abstract: ic 812 TRANSISTOR S 812 954F BD950F BD952F BD956F bd94 812W BD95
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD950F/952F/954F/956F DESCRIPTION •DC Current Gain: hFE= 40 Min @ IC= -500mA ·Complement to Type BD949F/951F/953F/955F APPLICATIONS ·Designed for power amplifier and switching applications


    Original     		PDF BD950F/952F/954F/956F -500mA BD949F/951F/953F/955F BD950F BD956F BD952F BD954F BD954F ic 812 TRANSISTOR S 812 954F BD950F BD952F BD956F bd94 812W BD95

    Untitled

    Abstract: No abstract text available
    Text: BD950F Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60è V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF BD950F

    to-53

    Abstract: TO111 2N5978 NPN
    Text: POWER SILICON TRANSISTORS Item Number »C Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (Hz) r •CBO Max (A) Max (s) (CE)sat Max (Ohms) T Oper Package Style Max (°C) D vie s 20 Watts or More, (Cont'd) . . .5 . .10 . . . -15 -20


    Original     		PDF 2N4112 2SA1069K 2SA12 O-111 O-111 to-53 TO111 2N5978 NPN

    2SA1012Y

    Abstract: 2SA1012-Y to-53 2SB116 2N3180 2N3184
    Text: POWER SILICON PNP Item Number Part Number I{C 5 10 >= 5 A, 2SB1165 2SB1203 2SA1012Y 2SA1244Y MJ2268 SML3708 SML3711 SML3704 SML3727 SML3776 ~~t~~~~ 15 20 SML3702 SML3751 2N3176 2N3180 2N3180 2N3180 2N3184 2N3188 ~~~~~~ 25 30 SDT3722 SDT3722 SDT3722 SDT3730


    Original     		PDF SDT3711 BFT35 2SA1069L 2SA1394L 2SA1012Y 2SA1012-Y to-53 2SB116 2N3180 2N3184

    538L

    Abstract: No abstract text available
    Text: BD950F; 952F _ LI PHILIPS INTERNATIONAL SbE D • R nQ fidF-3 5 S E _ 7 1 1 D Ô 2 k> D D M 3 1 1 b 432 ■ P H I N - — SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SO T186 envelope w ith an electrically insulated mounting base.


    OCR Scan     		PDF BD950F; DDM311b 538L

    bd955

    Abstract: BD953F bd950 BD949F BD950F BD951F BD952F BD954F BD955F BD956F
    Text: BD949F; BD951F BD953F; BD955F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F. QUICK REFERENCE DATA 953F 955F 60


    OCR Scan     		PDF BD949F; BD951F BD953F; BD955F BD950F, BD952F, BD954F BD956F. BD949F bd955 BD953F bd950 BD950F BD952F BD955F BD956F

    HU09

    Abstract: bd955 BD953F BD949F BD950F BD951F BD952F BD954F BD955F BD956F
    Text: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 0 0 4 3 1 0 b ST3 « P H I N T- SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each ina SOT186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F.


    OCR Scan     		PDF BD949F; BD951F BD953F; BD955F 7110fl2b 004310b OT186 BD950F, BD952F, BD954F HU09 bd955 BD953F BD949F BD950F BD952F BD955F BD956F

    bd955

    Abstract: BD955F 952F BD949F BD950F BD951F BD953F BD954F
    Text: BD950F;952F SbE D PHILIPS INTERNATIONAL • R D Q fid F - QÇ>RF 711D02ti 0 0 4 3 1 1 b 432 H P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.


    OCR Scan     		PDF BD950F 004311b OT186 BD949F, BD951F, BD953F BD955F. BD950F bd955 BD955F 952F BD949F BD951F BD954F

    952F

    Abstract: bd955 BD949F BD950F BD951F BD953F BD954F BD955F 956F 954F
    Text: BD950F; 952F BD954F; 956F I^ SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F. Q U ICK R E F E R E N C E D A TA Collector-base voltage


    OCR Scan     		PDF BD950F; BD954F; OT186 BD949F, BD951F, BD953F BD955F. BD950FJ OT186. BD950F 952F bd955 BD949F BD951F BD954F BD955F 956F 954F

    Untitled

    Abstract: No abstract text available
    Text: BD950F; 952F BD954F;956F _ SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.


    OCR Scan     		PDF BD950F; BD954F OT186 BD949F, BD951F, BD953F BD955F. BD950F bb53T31 D034SAO

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11